JPS60227461A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS60227461A
JPS60227461A JP59079683A JP7968384A JPS60227461A JP S60227461 A JPS60227461 A JP S60227461A JP 59079683 A JP59079683 A JP 59079683A JP 7968384 A JP7968384 A JP 7968384A JP S60227461 A JPS60227461 A JP S60227461A
Authority
JP
Japan
Prior art keywords
thin film
groove
sio2
shaped
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59079683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0336309B2 (de
Inventor
Takashi Morie
隆 森江
Kazushige Minegishi
峯岸　一茂
Ban Nakajima
中島　蕃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59079683A priority Critical patent/JPS60227461A/ja
Priority to DE8585302116T priority patent/DE3565339D1/de
Priority to EP85302116A priority patent/EP0164829B1/de
Publication of JPS60227461A publication Critical patent/JPS60227461A/ja
Priority to US07/110,616 priority patent/US4786954A/en
Publication of JPH0336309B2 publication Critical patent/JPH0336309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59079683A 1984-04-19 1984-04-19 半導体集積回路装置 Granted JPS60227461A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59079683A JPS60227461A (ja) 1984-04-19 1984-04-19 半導体集積回路装置
DE8585302116T DE3565339D1 (en) 1984-04-19 1985-03-26 Semiconductor memory device and method of manufacturing the same
EP85302116A EP0164829B1 (de) 1984-04-19 1985-03-26 Halbleiterspeicherbauelement und Verfahren zur Herstellung
US07/110,616 US4786954A (en) 1984-04-19 1987-10-19 Dynamic ram cell with trench surrounded switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079683A JPS60227461A (ja) 1984-04-19 1984-04-19 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60227461A true JPS60227461A (ja) 1985-11-12
JPH0336309B2 JPH0336309B2 (de) 1991-05-31

Family

ID=13696998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59079683A Granted JPS60227461A (ja) 1984-04-19 1984-04-19 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS60227461A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS61108163A (ja) * 1984-11-01 1986-05-26 Nec Corp 半導体記憶装置の製造方法
JPS62145864A (ja) * 1985-12-20 1987-06-29 Nec Corp ダイナミツク型半導体記憶装置の記憶素子構造および製造方法
JPS63228742A (ja) * 1987-03-06 1988-09-22 シ−メンス、アクチエンゲゼルシヤフト ３次元１トランジスタメモリセル構造とその製法
JPS645052A (en) * 1987-06-29 1989-01-10 Mitsubishi Electric Corp Capacitor cell of semiconductor storage device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS61108163A (ja) * 1984-11-01 1986-05-26 Nec Corp 半導体記憶装置の製造方法
JPH0369185B2 (de) * 1984-11-01 1991-10-31 Nippon Electric Co
JPS62145864A (ja) * 1985-12-20 1987-06-29 Nec Corp ダイナミツク型半導体記憶装置の記憶素子構造および製造方法
JPS63228742A (ja) * 1987-03-06 1988-09-22 シ−メンス、アクチエンゲゼルシヤフト ３次元１トランジスタメモリセル構造とその製法
JPS645052A (en) * 1987-06-29 1989-01-10 Mitsubishi Electric Corp Capacitor cell of semiconductor storage device

Also Published As

Publication number Publication date
JPH0336309B2 (de) 1991-05-31

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