JPS60226164A - 半導体注入集積論理回路装置 - Google Patents

半導体注入集積論理回路装置

Info

Publication number
JPS60226164A
JPS60226164A JP59084875A JP8487584A JPS60226164A JP S60226164 A JPS60226164 A JP S60226164A JP 59084875 A JP59084875 A JP 59084875A JP 8487584 A JP8487584 A JP 8487584A JP S60226164 A JPS60226164 A JP S60226164A
Authority
JP
Japan
Prior art keywords
region
injector
transistor
type
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59084875A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464184B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Ookoda
敏幸 大古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP59084875A priority Critical patent/JPS60226164A/ja
Publication of JPS60226164A publication Critical patent/JPS60226164A/ja
Publication of JPH0464184B2 publication Critical patent/JPH0464184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/655—Integrated injection logic using field effect injector structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP59084875A 1984-04-25 1984-04-25 半導体注入集積論理回路装置 Granted JPS60226164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084875A JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084875A JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Publications (2)

Publication Number Publication Date
JPS60226164A true JPS60226164A (ja) 1985-11-11
JPH0464184B2 JPH0464184B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=13842961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084875A Granted JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Country Status (1)

Country Link
JP (1) JPS60226164A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463683A (en) * 1977-10-31 1979-05-22 Hitachi Ltd Production of pn junction field effect transistor
JPS56118664A (en) * 1980-02-22 1981-09-17 Nishihara Environ Sanit Res Corp Density measuring device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463683A (en) * 1977-10-31 1979-05-22 Hitachi Ltd Production of pn junction field effect transistor
JPS56118664A (en) * 1980-02-22 1981-09-17 Nishihara Environ Sanit Res Corp Density measuring device

Also Published As

Publication number Publication date
JPH0464184B2 (enrdf_load_stackoverflow) 1992-10-14

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