JPS60226095A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS60226095A JPS60226095A JP59081857A JP8185784A JPS60226095A JP S60226095 A JPS60226095 A JP S60226095A JP 59081857 A JP59081857 A JP 59081857A JP 8185784 A JP8185784 A JP 8185784A JP S60226095 A JPS60226095 A JP S60226095A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- line
- circuit
- signal
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59081857A JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59081857A JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60226095A true JPS60226095A (ja) | 1985-11-11 |
JPH0523000B2 JPH0523000B2 (enrdf_load_stackoverflow) | 1993-03-31 |
Family
ID=13758152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59081857A Granted JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60226095A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276793A (ja) * | 1987-05-07 | 1988-11-15 | Nec Ic Microcomput Syst Ltd | ワ−ド線駆動回路 |
JPH0457297A (ja) * | 1990-06-22 | 1992-02-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2007035091A (ja) * | 2005-07-22 | 2007-02-08 | Sony Corp | 半導体記憶装置 |
GB2520277A (en) * | 2013-11-13 | 2015-05-20 | Advanced Risc Mach Ltd | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
US9105315B2 (en) | 2012-07-23 | 2015-08-11 | Arm Limited | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
JP2017054570A (ja) * | 2015-09-11 | 2017-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018092694A (ja) * | 2016-12-01 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
1984
- 1984-04-25 JP JP59081857A patent/JPS60226095A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276793A (ja) * | 1987-05-07 | 1988-11-15 | Nec Ic Microcomput Syst Ltd | ワ−ド線駆動回路 |
JPH0457297A (ja) * | 1990-06-22 | 1992-02-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2007035091A (ja) * | 2005-07-22 | 2007-02-08 | Sony Corp | 半導体記憶装置 |
US9105315B2 (en) | 2012-07-23 | 2015-08-11 | Arm Limited | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
GB2520277A (en) * | 2013-11-13 | 2015-05-20 | Advanced Risc Mach Ltd | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
GB2520277B (en) * | 2013-11-13 | 2016-07-20 | Advanced Risc Mach Ltd | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
JP2017054570A (ja) * | 2015-09-11 | 2017-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018092694A (ja) * | 2016-12-01 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0523000B2 (enrdf_load_stackoverflow) | 1993-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5623438A (en) | Virtual ground read only memory circuit | |
TWI406287B (zh) | 高速可程式化一次(otp)之感測方式及裝置 | |
JP3085455B2 (ja) | スタティックram | |
JP3897730B2 (ja) | 半導体記憶装置および半導体集積回路 | |
JP2001338993A (ja) | 半導体装置 | |
JP2003282823A (ja) | 半導体集積回路 | |
US4896300A (en) | Microprocessor including a microprogram ROM having a dynamic level detecting means for detecting a level of a word line | |
US6424589B2 (en) | Semiconductor memory device and method for accessing memory cell | |
WO2003071553A1 (en) | Semiconductor integrated circuit | |
JPS60226095A (ja) | 半導体記憶装置 | |
JPH0774318A (ja) | 半導体集積回路 | |
JPH0217875B2 (enrdf_load_stackoverflow) | ||
KR101035933B1 (ko) | 반도체 메모리 | |
JP2004140344A (ja) | 半導体集積回路 | |
KR100316418B1 (ko) | 감지증폭기의pmos소오스를풀업시키는n채널mos트랜지스터를갖는반도체메모리장치 | |
US5493526A (en) | Method and apparatus for enhanced EPROM and EEPROM programmability and process scaling | |
JPH11273369A (ja) | 絶縁ゲート型電界効果トランジスタ | |
KR100600461B1 (ko) | 반도체 장치 | |
JP3266346B2 (ja) | 半導体記憶装置 | |
JPS60242585A (ja) | 半導体記憶装置 | |
JPS59186196A (ja) | 横型レシオレスrom | |
JP2907892B2 (ja) | ダイナミック型ram | |
JPH04281291A (ja) | 半導体記憶装置 | |
TW202324424A (zh) | 低洩漏汲極程式設計rom | |
CN114883318A (zh) | 包含半导体布局以减轻局部布局效应的设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |