JPH0523000B2 - - Google Patents
Info
- Publication number
- JPH0523000B2 JPH0523000B2 JP8185784A JP8185784A JPH0523000B2 JP H0523000 B2 JPH0523000 B2 JP H0523000B2 JP 8185784 A JP8185784 A JP 8185784A JP 8185784 A JP8185784 A JP 8185784A JP H0523000 B2 JPH0523000 B2 JP H0523000B2
- Authority
- JP
- Japan
- Prior art keywords
- word line
- circuit
- mosfet
- line
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 36
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 31
- 229920005591 polysilicon Polymers 0.000 description 31
- 239000000758 substrate Substances 0.000 description 22
- 238000001514 detection method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011295 pitch Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241000270730 Alligator mississippiensis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081857A JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081857A JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226095A JPS60226095A (ja) | 1985-11-11 |
| JPH0523000B2 true JPH0523000B2 (enrdf_load_stackoverflow) | 1993-03-31 |
Family
ID=13758152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59081857A Granted JPS60226095A (ja) | 1984-04-25 | 1984-04-25 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226095A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276793A (ja) * | 1987-05-07 | 1988-11-15 | Nec Ic Microcomput Syst Ltd | ワ−ド線駆動回路 |
| JP3070068B2 (ja) * | 1990-06-22 | 2000-07-24 | 三菱電機株式会社 | 半導体記憶装置 |
| JP2007035091A (ja) * | 2005-07-22 | 2007-02-08 | Sony Corp | 半導体記憶装置 |
| US9105315B2 (en) | 2012-07-23 | 2015-08-11 | Arm Limited | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
| GB2520277B (en) * | 2013-11-13 | 2016-07-20 | Advanced Risc Mach Ltd | Controlling the voltage level on the word line to maintain performance and reduce access disturbs |
| JP6469554B2 (ja) * | 2015-09-11 | 2019-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6797010B2 (ja) * | 2016-12-01 | 2020-12-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
1984
- 1984-04-25 JP JP59081857A patent/JPS60226095A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226095A (ja) | 1985-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |