JPS6022497B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6022497B2
JPS6022497B2 JP49123765A JP12376574A JPS6022497B2 JP S6022497 B2 JPS6022497 B2 JP S6022497B2 JP 49123765 A JP49123765 A JP 49123765A JP 12376574 A JP12376574 A JP 12376574A JP S6022497 B2 JPS6022497 B2 JP S6022497B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon film
layer
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49123765A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5149686A (US06649357-20031118-C00005.png
Inventor
孟史 松下
久雄 林
昭明 青木
英伸 望月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP49123765A priority Critical patent/JPS6022497B2/ja
Priority to US05/624,889 priority patent/US4063275A/en
Priority to DE19752547304 priority patent/DE2547304A1/de
Priority to GB43656/75A priority patent/GB1515179A/en
Priority to CH1371375A priority patent/CH608653A5/xx
Priority to CA238,212A priority patent/CA1046650A/en
Priority to DK480275AA priority patent/DK142758B/da
Priority to AU85991/75A priority patent/AU504667B2/en
Priority to SE7511927A priority patent/SE411606B/xx
Priority to IT28663/75A priority patent/IT1044592B/it
Priority to BR7506996*A priority patent/BR7506996A/pt
Priority to ES442102A priority patent/ES442102A1/es
Priority to AT0818475A priority patent/AT370561B/de
Priority to NLAANVRAGE7512559,A priority patent/NL183260C/xx
Priority to FR7532826A priority patent/FR2290040A1/fr
Publication of JPS5149686A publication Critical patent/JPS5149686A/ja
Publication of JPS6022497B2 publication Critical patent/JPS6022497B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP49123765A 1974-10-26 1974-10-26 半導体装置 Expired JPS6022497B2 (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP49123765A JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置
US05/624,889 US4063275A (en) 1974-10-26 1975-10-22 Semiconductor device with two passivating layers
DE19752547304 DE2547304A1 (de) 1974-10-26 1975-10-22 Halbleiterbauelement und verfahren zu seiner herstellung
GB43656/75A GB1515179A (en) 1974-10-26 1975-10-23 Semiconductor devices
CH1371375A CH608653A5 (US06649357-20031118-C00005.png) 1974-10-26 1975-10-23
CA238,212A CA1046650A (en) 1974-10-26 1975-10-23 Polycrystalline silicon based surface passivation films
DK480275AA DK142758B (da) 1974-10-26 1975-10-24 Halvlederelement med passiviseringslag.
AU85991/75A AU504667B2 (en) 1974-10-26 1975-10-24 Semiconductor device with passivating layer
SE7511927A SE411606B (sv) 1974-10-26 1975-10-24 Halvledardon innefattande bl a ett passiviseringsskikt av polykristallint kisel som innehaller syre
IT28663/75A IT1044592B (it) 1974-10-26 1975-10-24 Dispositivo semiconduttor
BR7506996*A BR7506996A (pt) 1974-10-26 1975-10-24 Aperfeicoamento em dispositivo semicondutor e em processo para fabrica-lo
ES442102A ES442102A1 (es) 1974-10-26 1975-10-25 Un dispositivo semiconductor.
AT0818475A AT370561B (de) 1974-10-26 1975-10-27 Oberflaechenpassivierter halbleiterbauteil
NLAANVRAGE7512559,A NL183260C (nl) 1974-10-26 1975-10-27 Halfgeleiderinrichting, omvattende een halfgeleiderlichaam met een op een oppervlak van het halfgeleiderlichaam aangebrachte passiveringslaag van polykristallijn silicium met 2-45 atoom% zuurstof.
FR7532826A FR2290040A1 (fr) 1974-10-26 1975-10-27 Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49123765A JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS5149686A JPS5149686A (US06649357-20031118-C00005.png) 1976-04-30
JPS6022497B2 true JPS6022497B2 (ja) 1985-06-03

Family

ID=14868714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49123765A Expired JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置

Country Status (15)

Country Link
US (1) US4063275A (US06649357-20031118-C00005.png)
JP (1) JPS6022497B2 (US06649357-20031118-C00005.png)
AT (1) AT370561B (US06649357-20031118-C00005.png)
AU (1) AU504667B2 (US06649357-20031118-C00005.png)
BR (1) BR7506996A (US06649357-20031118-C00005.png)
CA (1) CA1046650A (US06649357-20031118-C00005.png)
CH (1) CH608653A5 (US06649357-20031118-C00005.png)
DE (1) DE2547304A1 (US06649357-20031118-C00005.png)
DK (1) DK142758B (US06649357-20031118-C00005.png)
ES (1) ES442102A1 (US06649357-20031118-C00005.png)
FR (1) FR2290040A1 (US06649357-20031118-C00005.png)
GB (1) GB1515179A (US06649357-20031118-C00005.png)
IT (1) IT1044592B (US06649357-20031118-C00005.png)
NL (1) NL183260C (US06649357-20031118-C00005.png)
SE (1) SE411606B (US06649357-20031118-C00005.png)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht
IN147578B (US06649357-20031118-C00005.png) * 1977-02-24 1980-04-19 Rca Corp
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
GB2071411B (en) * 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS6042859A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 高耐圧半導体装置の製造方法
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
EP0388612B1 (en) * 1989-03-24 1994-11-30 International Business Machines Corporation Semiconductor device with self-aligned contact to buried subcollector
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
DE69427501T2 (de) * 1993-04-05 2002-05-23 Denso Corp., Kariya Halbleiteranordnung mit Dünnfilm-Widerstand
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
CN1293374C (zh) * 2002-04-17 2007-01-03 北京师范大学 能直接测量波长的新结构光电探测器及其探测方法
CN111816574B (zh) * 2020-05-29 2022-03-04 济宁东方芯电子科技有限公司 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
CH428947A (fr) * 1966-01-31 1967-01-31 Centre Electron Horloger Procédé de fabrication d'un circuit intégré
GB1211354A (en) * 1966-12-01 1970-11-04 Gen Electric Improvements relating to passivated semiconductor devices
DE1614455C3 (de) * 1967-03-16 1979-07-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3558348A (en) * 1968-04-18 1971-01-26 Bell Telephone Labor Inc Dielectric films for semiconductor devices
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
JPS497870B1 (US06649357-20031118-C00005.png) * 1969-06-06 1974-02-22
US3878549A (en) * 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
DE2220807A1 (de) * 1971-04-30 1972-11-16 Texas Instruments Inc Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten
NL7204741A (US06649357-20031118-C00005.png) * 1972-04-08 1973-10-10
JPS532552B2 (US06649357-20031118-C00005.png) * 1974-03-30 1978-01-28

Also Published As

Publication number Publication date
BR7506996A (pt) 1976-08-17
AU504667B2 (en) 1979-10-25
AT370561B (de) 1983-04-11
NL183260C (nl) 1988-09-01
GB1515179A (en) 1978-06-21
ATA818475A (de) 1982-08-15
IT1044592B (it) 1980-03-31
US4063275A (en) 1977-12-13
FR2290040B1 (US06649357-20031118-C00005.png) 1979-08-17
DK142758C (US06649357-20031118-C00005.png) 1981-08-10
SE7511927L (sv) 1976-04-27
SE411606B (sv) 1980-01-14
FR2290040A1 (fr) 1976-05-28
AU8599175A (en) 1977-04-28
ES442102A1 (es) 1977-03-16
NL7512559A (nl) 1976-04-28
DK480275A (US06649357-20031118-C00005.png) 1976-04-27
JPS5149686A (US06649357-20031118-C00005.png) 1976-04-30
DE2547304C2 (US06649357-20031118-C00005.png) 1988-08-11
DK142758B (da) 1981-01-12
NL183260B (nl) 1988-04-05
DE2547304A1 (de) 1976-04-29
CH608653A5 (US06649357-20031118-C00005.png) 1979-01-15
CA1046650A (en) 1979-01-16

Similar Documents

Publication Publication Date Title
JPS6022497B2 (ja) 半導体装置
US3967310A (en) Semiconductor device having controlled surface charges by passivation films formed thereon
US3597667A (en) Silicon oxide-silicon nitride coatings for semiconductor devices
US4055884A (en) Fabrication of power field effect transistors and the resulting structures
US4062707A (en) Utilizing multiple polycrystalline silicon masks for diffusion and passivation
US4176372A (en) Semiconductor device having oxygen doped polycrystalline passivation layer
US3502950A (en) Gate structure for insulated gate field effect transistor
US4011576A (en) Nonvolatile semiconductor memory devices
US3906620A (en) Method of producing multi-layer structure
GB1422033A (en) Method of manufacturing a semiconductor device
JPH0350414B2 (US06649357-20031118-C00005.png)
US4114254A (en) Method for manufacture of a semiconductor device
US3550256A (en) Control of surface inversion of p- and n-type silicon using dense dielectrics
US4695479A (en) MOSFET semiconductor device and manufacturing method thereof
US4060827A (en) Semiconductor device and a method of making the same
US3919008A (en) Method of manufacturing MOS type semiconductor devices
KR800001340B1 (ko) 반도체 장치
JPH0423834B2 (US06649357-20031118-C00005.png)
JPS61172339A (ja) 半導体装置の製造方法
JPH0376272A (ja) 絶縁ゲート型電界効果トランジスタ
JPS606104B2 (ja) Ｍｉｓ半導体装置
JPH118234A (ja) 半導体装置
JPS59117133A (ja) 半導体装置
JPH1117172A (ja) 電界効果型半導体装置、電界効果トランジスタおよびその製造方法
JPH02262358A (ja) 半導体装置