JPS60217690A - 光半導体装置およびその製造方法 - Google Patents

光半導体装置およびその製造方法

Info

Publication number
JPS60217690A
JPS60217690A JP59073061A JP7306184A JPS60217690A JP S60217690 A JPS60217690 A JP S60217690A JP 59073061 A JP59073061 A JP 59073061A JP 7306184 A JP7306184 A JP 7306184A JP S60217690 A JPS60217690 A JP S60217690A
Authority
JP
Japan
Prior art keywords
layer
refractive index
active layer
striped electrode
quantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59073061A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0131318B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Okamoto
岡本　紘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59073061A priority Critical patent/JPS60217690A/ja
Publication of JPS60217690A publication Critical patent/JPS60217690A/ja
Publication of JPH0131318B2 publication Critical patent/JPH0131318B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP59073061A 1984-04-13 1984-04-13 光半導体装置およびその製造方法 Granted JPS60217690A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59073061A JPS60217690A (ja) 1984-04-13 1984-04-13 光半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59073061A JPS60217690A (ja) 1984-04-13 1984-04-13 光半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS60217690A true JPS60217690A (ja) 1985-10-31
JPH0131318B2 JPH0131318B2 (enrdf_load_stackoverflow) 1989-06-26

Family

ID=13507458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59073061A Granted JPS60217690A (ja) 1984-04-13 1984-04-13 光半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS60217690A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236886A (ja) * 1985-08-12 1987-02-17 Hitachi Ltd 半導体構造体とその製造方法
EP0177221A3 (en) * 1984-09-28 1987-09-30 Hitachi, Ltd. Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177221A3 (en) * 1984-09-28 1987-09-30 Hitachi, Ltd. Semiconductor laser
JPS6236886A (ja) * 1985-08-12 1987-02-17 Hitachi Ltd 半導体構造体とその製造方法

Also Published As

Publication number Publication date
JPH0131318B2 (enrdf_load_stackoverflow) 1989-06-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term