JPH0131318B2 - - Google Patents
Info
- Publication number
- JPH0131318B2 JPH0131318B2 JP59073061A JP7306184A JPH0131318B2 JP H0131318 B2 JPH0131318 B2 JP H0131318B2 JP 59073061 A JP59073061 A JP 59073061A JP 7306184 A JP7306184 A JP 7306184A JP H0131318 B2 JPH0131318 B2 JP H0131318B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser
- stripe electrode
- active layer
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 25
- 238000005253 cladding Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000010884 ion-beam technique Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000010287 polarization Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59073061A JPS60217690A (ja) | 1984-04-13 | 1984-04-13 | 光半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59073061A JPS60217690A (ja) | 1984-04-13 | 1984-04-13 | 光半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60217690A JPS60217690A (ja) | 1985-10-31 |
| JPH0131318B2 true JPH0131318B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Family
ID=13507458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59073061A Granted JPS60217690A (ja) | 1984-04-13 | 1984-04-13 | 光半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60217690A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0656906B2 (ja) * | 1984-09-28 | 1994-07-27 | 株式会社日立製作所 | 半導体レ−ザ装置 |
| JPH07118560B2 (ja) * | 1985-08-12 | 1995-12-18 | 株式会社日立製作所 | 半導体構造体とその製造方法 |
-
1984
- 1984-04-13 JP JP59073061A patent/JPS60217690A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60217690A (ja) | 1985-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |