JPH0138389B2 - - Google Patents
Info
- Publication number
- JPH0138389B2 JPH0138389B2 JP5824185A JP5824185A JPH0138389B2 JP H0138389 B2 JPH0138389 B2 JP H0138389B2 JP 5824185 A JP5824185 A JP 5824185A JP 5824185 A JP5824185 A JP 5824185A JP H0138389 B2 JPH0138389 B2 JP H0138389B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- average composition
- laser device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000000203 mixture Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5824185A JPS61218190A (ja) | 1985-03-25 | 1985-03-25 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5824185A JPS61218190A (ja) | 1985-03-25 | 1985-03-25 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61218190A JPS61218190A (ja) | 1986-09-27 |
| JPH0138389B2 true JPH0138389B2 (enrdf_load_stackoverflow) | 1989-08-14 |
Family
ID=13078609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5824185A Granted JPS61218190A (ja) | 1985-03-25 | 1985-03-25 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61218190A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2622143B2 (ja) * | 1988-03-28 | 1997-06-18 | キヤノン株式会社 | 分布帰還型半導体レーザ及び分布帰還型半導体レーザの作成方法 |
| GB0103838D0 (en) * | 2001-02-16 | 2001-04-04 | Univ Glasgow | Improvements in or relating to semiconductor lasers |
-
1985
- 1985-03-25 JP JP5824185A patent/JPS61218190A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61218190A (ja) | 1986-09-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |