JPS60196952A - Νｉ化合物薄膜用の薄膜電極 - Google Patents

Νｉ化合物薄膜用の薄膜電極

Info

Publication number
JPS60196952A
JPS60196952A JP59054074A JP5407484A JPS60196952A JP S60196952 A JPS60196952 A JP S60196952A JP 59054074 A JP59054074 A JP 59054074A JP 5407484 A JP5407484 A JP 5407484A JP S60196952 A JPS60196952 A JP S60196952A
Authority
JP
Japan
Prior art keywords
thin film
electrode
compound
compound thin
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59054074A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0349661B2 (enExample
Inventor
Yasunori Taga
康訓 多賀
Takeshi Owaki
健史 大脇
Hideya Yamadera
秀哉 山寺
Masayuki Tanemura
種村　真幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59054074A priority Critical patent/JPS60196952A/ja
Publication of JPS60196952A publication Critical patent/JPS60196952A/ja
Publication of JPH0349661B2 publication Critical patent/JPH0349661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Wire Bonding (AREA)
  • Hall/Mr Elements (AREA)
JP59054074A 1984-03-19 1984-03-19 Νｉ化合物薄膜用の薄膜電極 Granted JPS60196952A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59054074A JPS60196952A (ja) 1984-03-19 1984-03-19 Νｉ化合物薄膜用の薄膜電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59054074A JPS60196952A (ja) 1984-03-19 1984-03-19 Νｉ化合物薄膜用の薄膜電極

Publications (2)

Publication Number Publication Date
JPS60196952A true JPS60196952A (ja) 1985-10-05
JPH0349661B2 JPH0349661B2 (enExample) 1991-07-30

Family

ID=12960469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59054074A Granted JPS60196952A (ja) 1984-03-19 1984-03-19 Νｉ化合物薄膜用の薄膜電極

Country Status (1)

Country Link
JP (1) JPS60196952A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4980560A (enExample) * 1972-11-30 1974-08-03
JPS58165211A (ja) * 1981-12-30 1983-09-30 カルル・ノイメイヤ−・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 鉄線材およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4980560A (enExample) * 1972-11-30 1974-08-03
JPS58165211A (ja) * 1981-12-30 1983-09-30 カルル・ノイメイヤ−・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 鉄線材およびその製造方法

Also Published As

Publication number Publication date
JPH0349661B2 (enExample) 1991-07-30

Similar Documents

Publication Publication Date Title
US4840302A (en) Chromium-titanium alloy
US5675177A (en) Ultra-thin noble metal coatings for electronic packaging
EP0366711B1 (en) Semiconductor casing
JPH07503103A (ja) パッケージ
EP0110181B1 (en) Method for inhibiting metal migration during heat cycling of multilayer metal thin film structures
JPS60196952A (ja) Νｉ化合物薄膜用の薄膜電極
US4613404A (en) Materials which exhibit a surface active effect with vacuum baked photoresists and method of using the same
JPH06176903A (ja) Ｃｒ系サーメット薄膜の電極構造
JPS63122248A (ja) 半導体装置の製造方法
JPH0677805B2 (ja) スパツタリング用タ−ゲツトのボンデイング方法
JPS616882A (ja) 超電導集積回路の端子電極とその製造方法
JPS6318695A (ja) 配線基板
JPS5835989A (ja) 非晶質光半導体装置
JPS6038823A (ja) 半導体装置
JPH0629769A (ja) チップ型電子部品
JPS60218863A (ja) 半導体リ−ドフレ−ム
JPS62163335A (ja) 半導体装置
JPS5928070B2 (ja) 半導体変位変換器
JPS60201651A (ja) 半導体用リ−ドフレ−ム
JPS6370584A (ja) シヤント型磁気抵抗効果型素子
JPS6329437B2 (enExample)
JPS58164232A (ja) 半導体装置
JPS601853A (ja) 半導体用リ−ドフレ−ム
JPS61116860A (ja) 半導体集積回路の多層配線の形成方法
JPH02156582A (ja) 磁気センサとその製造方法