JPS60191097A - 人工ダイヤモンドの析出生成方法 - Google Patents

人工ダイヤモンドの析出生成方法

Info

Publication number
JPS60191097A
JPS60191097A JP59044649A JP4464984A JPS60191097A JP S60191097 A JPS60191097 A JP S60191097A JP 59044649 A JP59044649 A JP 59044649A JP 4464984 A JP4464984 A JP 4464984A JP S60191097 A JPS60191097 A JP S60191097A
Authority
JP
Japan
Prior art keywords
diamond
substrate
reaction
reaction mixture
mixture gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59044649A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327319B2 (enrdf_load_stackoverflow
Inventor
Noribumi Kikuchi
菊池　則文
Takayuki Shingyouchi
新行内　隆之
Hiroaki Yamashita
山下　博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59044649A priority Critical patent/JPS60191097A/ja
Publication of JPS60191097A publication Critical patent/JPS60191097A/ja
Publication of JPS6327319B2 publication Critical patent/JPS6327319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59044649A 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法 Granted JPS60191097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59044649A JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59044649A JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Publications (2)

Publication Number Publication Date
JPS60191097A true JPS60191097A (ja) 1985-09-28
JPS6327319B2 JPS6327319B2 (enrdf_load_stackoverflow) 1988-06-02

Family

ID=12697286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59044649A Granted JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Country Status (1)

Country Link
JP (1) JPS60191097A (enrdf_load_stackoverflow)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158899A (ja) * 1985-07-31 1986-07-18 Kyocera Corp ダイヤモンド膜の製法
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS6321291A (ja) * 1986-07-11 1988-01-28 Kyocera Corp ダイヤモンド膜の製造方法
JPS6321292A (ja) * 1986-07-11 1988-01-28 Kyocera Corp ダイヤモンド膜の製造方法
JPS63166798A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS63166733A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
US4767608A (en) * 1986-10-23 1988-08-30 National Institute For Research In Inorganic Materials Method for synthesizing diamond by using plasma
JPH01130520A (ja) * 1987-11-17 1989-05-23 Idemitsu Petrochem Co Ltd ダイヤモンド半導体の合成方法
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
US4984534A (en) * 1987-04-22 1991-01-15 Idemitsu Petrochemical Co., Ltd. Method for synthesis of diamond
WO1991014572A1 (en) * 1990-03-20 1991-10-03 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications
US5068871A (en) * 1989-08-04 1991-11-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Process for synthesizing diamond and apparatus therefor
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
US5225275A (en) * 1986-07-11 1993-07-06 Kyocera Corporation Method of producing diamond films
US5270029A (en) * 1987-02-24 1993-12-14 Semiconductor Energy Laboratory Co., Ltd. Carbon substance and its manufacturing method
US5270114A (en) * 1987-03-30 1993-12-14 Crystallume High thermal conductivity diamond/non-diamond composite materials
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
US5273825A (en) * 1987-03-30 1993-12-28 Crystallume Article comprising regions of high thermal conductivity diamond on substrates
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
US5277975A (en) * 1987-03-30 1994-01-11 Crystallume High thermal-conductivity diamond-coated fiber articles
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
US5633088A (en) * 1987-03-30 1997-05-27 Crystallume Diamond film and solid particle composite structure and methods for fabricating same
US6207281B1 (en) 1988-03-07 2001-03-27 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158899A (ja) * 1985-07-31 1986-07-18 Kyocera Corp ダイヤモンド膜の製法
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
JPS6321291A (ja) * 1986-07-11 1988-01-28 Kyocera Corp ダイヤモンド膜の製造方法
JPS6321292A (ja) * 1986-07-11 1988-01-28 Kyocera Corp ダイヤモンド膜の製造方法
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
US5225275A (en) * 1986-07-11 1993-07-06 Kyocera Corporation Method of producing diamond films
US4767608A (en) * 1986-10-23 1988-08-30 National Institute For Research In Inorganic Materials Method for synthesizing diamond by using plasma
JPS63166733A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
JPS63166798A (ja) * 1986-12-27 1988-07-09 Kyocera Corp ダイヤモンド膜の製造方法
US5270029A (en) * 1987-02-24 1993-12-14 Semiconductor Energy Laboratory Co., Ltd. Carbon substance and its manufacturing method
US5270114A (en) * 1987-03-30 1993-12-14 Crystallume High thermal conductivity diamond/non-diamond composite materials
US5633088A (en) * 1987-03-30 1997-05-27 Crystallume Diamond film and solid particle composite structure and methods for fabricating same
US5304424A (en) * 1987-03-30 1994-04-19 Crystallume High thermal conductivity diamond/non-diamond composite materials
US5284709A (en) * 1987-03-30 1994-02-08 Crystallume Diamond materials with enhanced heat conductivity
US5277975A (en) * 1987-03-30 1994-01-11 Crystallume High thermal-conductivity diamond-coated fiber articles
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
US5273825A (en) * 1987-03-30 1993-12-28 Crystallume Article comprising regions of high thermal conductivity diamond on substrates
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
US4985227A (en) * 1987-04-22 1991-01-15 Indemitsu Petrochemical Co., Ltd. Method for synthesis or diamond
US4984534A (en) * 1987-04-22 1991-01-15 Idemitsu Petrochemical Co., Ltd. Method for synthesis of diamond
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH01130520A (ja) * 1987-11-17 1989-05-23 Idemitsu Petrochem Co Ltd ダイヤモンド半導体の合成方法
US6207281B1 (en) 1988-03-07 2001-03-27 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6265070B1 (en) 1988-03-07 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6583481B2 (en) 1988-03-07 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US7144629B2 (en) 1988-03-07 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
US5068871A (en) * 1989-08-04 1991-11-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Process for synthesizing diamond and apparatus therefor
WO1991014572A1 (en) * 1990-03-20 1991-10-03 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications

Also Published As

Publication number Publication date
JPS6327319B2 (enrdf_load_stackoverflow) 1988-06-02

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