JPS60191097A - Crystallizing method of artificial diamond - Google Patents
Crystallizing method of artificial diamondInfo
- Publication number
- JPS60191097A JPS60191097A JP59044649A JP4464984A JPS60191097A JP S60191097 A JPS60191097 A JP S60191097A JP 59044649 A JP59044649 A JP 59044649A JP 4464984 A JP4464984 A JP 4464984A JP S60191097 A JPS60191097 A JP S60191097A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- reaction
- reaction mixture
- mixture gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、人工ダイヤモンドの析出生成方法の改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method for producing artificial diamond by precipitation.
従来、人工ダイヤモンド析出生成方法としては多数の方
法が提案され、この中で反応混合ガスを加熱し、活性化
する手段どして、
（ａ）熱電子放射材、
（ｂ） 高周波によるプラズマ放電、
（Ｃ） マイクロ波によるプラズマ放電、以上（ａ）〜
（Ｃ）のいずれかを採用する代表的方法が注目されてい
る。Conventionally, many methods have been proposed for producing artificial diamond precipitates, and among them, as a means of heating and activating the reaction mixture gas, (a) thermionic emitting material, (b) plasma discharge by high frequency, (C) Plasma discharge by microwave, above (a) ~
Representative methods that adopt either (C) are attracting attention.
上記従来（ａ）方法は、第１図に概略断面図で示される
ように、石英製反応容器１内の上部に開口する反応混合
ガス導入管２によって流入された、炭化水素と水素で構
成された反応混合ガスを、熱電子放射材としての例えば
金属タングステン製フィラメント３および台板４上に支
持された基体５を通して下方に流し、この間反応容器ｌ
内の雰囲気圧力を０１〜３００ ｔｏｒｒに保持すると
共に、フィラメント３を１５００〜２５００℃に加熱し
て、反応混合ガスの加熱活性化と、所定間隔下方に配置
された基体表面の３００〜１３００℃の範囲内の温度へ
の加熱をはかシ、この状態で所定時間の反応を行なわし
めることにより基体５の表面にダイヤモンドを析出生成
せしめる方法であり、例えば４！ｉ開昭５８−９１１０
０号公報に記載される方法がこの方法に相当する方法で
ある。The above conventional method (a), as shown in a schematic cross-sectional view in FIG. The reactant mixture gas flows downward through a filament 3 made of, for example, metal tungsten as a thermionic emitter and a substrate 5 supported on a base plate 4, during which time the reaction vessel l
At the same time, the filament 3 is heated to 1500 to 2500°C to activate the reaction mixture gas and to heat the surface of the substrate disposed below at a predetermined interval from 300 to 1300°C. This is a method in which diamond is precipitated and formed on the surface of the substrate 5 by heating it to a temperature within a range and carrying out a reaction in this state for a predetermined time. i Kaisho 58-9110
The method described in Publication No. 0 is a method corresponding to this method.
−また、上記従来（ｂ）方法は、同じく第２図に概略断
面図で示されるように、石英製反応容器］内の中火部に
基体５を置き、この反応容器１の一方側に設けた反応混
合ガス導入管２から炭化水素と水素で構成された反応混
合ガスを流入し、一方反応容器ｌの他方側から排気し、
この間、反応容器１内の雰囲気圧力を数ｔｏｒｒ〜数１
０ ｔｏｒｒに保持すると共に、反応容器ｌの中央外周
部に設けた高周波コイル６に、例えば周波数： １３．
５６ ＭＨｚ、出カニ５００Ｗの条件を付加して反応容
器１内の基体５の周囲にプラズマ放電を誘起させ、この
プラズマ放電によって反応混合ガスの加熱活性化と基体
表面温度の上昇をはかシ、この状態で所定時間の反応を
行なわしめることにより基体表面にダイヤモンドを析出
生成せしめる方法であり、例えば特開昭、５ Ｂ−１，
、”３５１１ ’７号公報に記載されている方法がこれ
に相当するものである。-Also, in the conventional method (b), as shown in the schematic cross-sectional view in FIG. A reaction mixture gas composed of hydrocarbons and hydrogen is introduced from the reaction mixture gas inlet pipe 2, and is exhausted from the other side of the reaction vessel l.
During this time, the atmospheric pressure in the reaction vessel 1 is maintained at several torr to several torr.
0 torr, and a high frequency coil 6 provided at the center outer periphery of the reaction vessel l is connected to a high frequency coil 6 having a frequency of, for example: 13.
56 MHz and a power output of 500 W to induce a plasma discharge around the substrate 5 in the reaction vessel 1, and this plasma discharge activates the reaction mixture gas by heating and increases the surface temperature of the substrate. This is a method of precipitating diamond on the surface of the substrate by carrying out a reaction for a predetermined period of time in this state.
The method described in ``3511 '7 publication corresponds to this method.
さらに、上記従来（Ｃ）方法は、同様に第３図に概略断
面図で示されるように、石英製反応容器ｌ内の中火部に
基体５を置き、この反応容器ｌの上方に設けた反応混合
ガス導入管２かも、炭化水素と水素で構成された反応混
合ガスを流入し、一方反応容器ｌの下方から排気し、こ
の間、反応容器内の雰囲気圧力を０．１〜３００ ｔｏ
ｒｒに保持し、一方反応容器ｌの中央外周部に設けた導
波管７を通して供給された、例えば２４５０ＭＨｚのマ
イクロ波をプラズマ調整用プランジャ８によって調整し
て、反応容器ｌ内の基体５の周囲にプラズマ放電を発生
させ、このプラズマ放電によって反応混合ガスの加熱活
性化と基体表面温度の上昇をはかり、この状態で所定時
間の反応を行なわしめることにより基体表面にダイヤモ
ンドを析出生成せしめる方法であり、例えば特開昭５８
−１１０４９４号公報に記載されている方法がこれに相
当する方法である。Furthermore, in the conventional method (C), as similarly shown in the schematic cross-sectional view in FIG. A reaction mixture gas composed of hydrocarbons and hydrogen is also introduced into the reaction mixture gas inlet pipe 2, while being exhausted from the bottom of the reaction vessel 1. During this time, the atmospheric pressure inside the reaction vessel is maintained at 0.1 to 300 to
rr, and on the other hand, a microwave of, for example, 2450 MHz, which is supplied through a waveguide 7 provided at the central outer circumference of the reaction vessel l, is adjusted by a plasma adjustment plunger 8 to spread around the substrate 5 in the reaction vessel l. This is a method in which a plasma discharge is generated, the plasma discharge heats and activates the reaction mixture gas, and the temperature of the substrate surface increases, and by allowing the reaction to occur in this state for a predetermined period of time, diamond is precipitated and formed on the substrate surface. , for example, JP-A-58
The method described in Japanese Patent No.-110494 is a method corresponding to this.
しかし、これらの従来方法は、いずれも共通して基体表
面へのダイヤモンド析出生成速度が遅いという問題点が
ある。However, all of these conventional methods have a common problem in that the rate of diamond precipitation on the substrate surface is slow.
そこて、本発明者等は、」二連のような観点から、上記
の従来人工ダイヤモンド析出生成方法におけるダイヤモ
ンドの析出生成速度の向上をはかるべく（υ［究を行な
つ／こ結果、上記の人工ダイヤモンド析出生成方法を実
施するに際して、炭化水素と水素とで構成された反応混
合ガスに、−酸化炭素（ＣＯ）を配合金有させると、基
体表面へのダイヤモンドの析出生成が一段と促進される
ようになるという知見を得だのである。Therefore, the present inventors conducted research to improve the diamond precipitate formation rate in the conventional artificial diamond precipitate formation method described above from a dual perspective. When carrying out the method for producing artificial diamond precipitation, adding -carbon oxide (CO) to the reaction mixture gas composed of hydrocarbons and hydrogen further promotes the production of diamond precipitation on the surface of the substrate. We have gained the knowledge that this will happen.
この発明は、上５己知見にもとづいてなされたものであ
って、炭化水素と水素からなり、かつ熱電ｒ放躬拐、高
周波によるプラズマ放電、あるいはマイクロ波によるプ
ラズマ放電などにより活性化された加熱反応混合ガスの
流れの中に置かれた加熱基体の表面に人工ダイヤモンド
を析出生成せしめるに際して、前記反応混合ガスに０．
０５〜工０芥１１１チのＣＯを配合金有せしめて、前記
基体表面へのダイヤ七ン１゛の析出生成の促進をはかっ
た点に特徴を有するものである。This invention was made based on the above-mentioned knowledge, and is made of hydrocarbons and hydrogen, and is heated by activated by thermoelectric radiation, high frequency plasma discharge, microwave plasma discharge, etc. When artificial diamond is precipitated and formed on the surface of a heated substrate placed in a flow of a reaction mixture gas, 0.0% is added to the reaction mixture gas.
The present invention is characterized in that it contains 0.05 to 0.111 g of CO as a compound to promote the precipitation of diamond 7.1 on the surface of the substrate.
なお、Ｃｏの配合含有量をＯ，’０５〜１ｏ容量係とし
たのは、００５％未満の含有では所望のダイヤモンド析
出生成速度の向上効果が得られず、一方１０％を越えて
配合すると、基体表面に析出する人工ダイヤモンド中の
酸素含有量が多くなりすぎて、ダイヤモンド結晶構造が
損なわれるようになるという理由によるものであり、中
でも０．０５〜５容量チの配合金有が望ましい。The reason why the content of Co is set as O,'05 to 1o by volume is that if the content is less than 0.05%, the desired effect of improving the diamond precipitation formation rate cannot be obtained, whereas if it is added in excess of 10%, This is because the oxygen content in the artificial diamond precipitated on the surface of the substrate becomes too high and the diamond crystal structure is impaired, and it is particularly desirable to have a compounded metal with a volume of 0.05 to 5.
つぎに、この発明の方法を実施例により具体的に１２明
する。Next, the method of the present invention will be specifically explained with reference to 12 examples.
実施例 ］
実施に際して、第１図に示される装置を用い、石英製反
応容器（１）の外径： ５０ ｒｔｕｎφ、基体（５）
、平面１０ｍｍ０×厚さ１ ｒｕｒの寸法をもった金属
タングステン板材、
反応混合ガス組成、容量割合で、 Ｈ２／ｃ Ｈ，／
ＣＯ＝ １００／１１０．２、
金属タングステン製フィラメント（３）と基体（５）の
表面との間隔：３０ｍｘ
雰囲気圧力ニ ２０ ｔｏｒｒ、
フィラメント（３）の加熱温度： ２０００℃、フィラ
メントによる基体表面温度： ’ｉ’ｏｏ℃、反応時間
：１時間、
の条件で実施して、基体５の表面に人工ダイヤ、モンド
を析出生成せしめた。Example ] In carrying out the experiment, the apparatus shown in FIG. 1 was used, the outer diameter of the quartz reaction vessel (1) was 50 rtunφ, and the substrate (5) was
, a metal tungsten plate with dimensions of 10 mm in plane x 1 r in thickness, reaction mixture gas composition, volume ratio, H2/c H,/
CO = 100/110.2, Distance between metal tungsten filament (3) and surface of base (5): 30mx Atmospheric pressure: 20 torr, Heating temperature of filament (3): 2000°C, Surface temperature of base by filament: The reaction was carried out under the following conditions: 'i'oo°C, reaction time: 1 hour, and artificial diamond, diamond, was deposited on the surface of the substrate 5.
この結果、上記基体表面には平均層厚で４μｍの人工ダ
イヤモンド膜が形成され、この人工ダイヤモンドは、天
然ダイヤモンドと同等のヌープ硬さで７０００ｋｇ／ｍ
１１以上の高硬度を示し、かつＸ線回折でも天然ダイヤ
モンドと同じ回折結果を示した。As a result, an artificial diamond film with an average layer thickness of 4 μm is formed on the surface of the substrate, and this artificial diamond has a Knoop hardness of 7000 kg/m, which is equivalent to that of natural diamond.
It exhibited a high hardness of 11 or more, and also showed the same diffraction results as natural diamond in X-ray diffraction.
一方、比較の目的で、反応混合ガスの組成を、容量割合
で、Ｈ２／ＣＨ，＝ １０ ｏ／１とする以外は、同一
の条件で反応を行なわしめたところ、基体表面には平均
層厚で０５μｍの人工ダイヤモンド膜しか形成されず、
この結果より反応混合ガス中にＣｏを配合金有せしめれ
ば人工ダイヤモンドの析出生成速度が一段と向上するよ
うになることが明らかである。On the other hand, for the purpose of comparison, the reaction was carried out under the same conditions except that the composition of the reaction mixture gas was changed to a volume ratio of H2/CH, = 10 o/1. Only an artificial diamond film of 0.05 μm was formed,
From this result, it is clear that if Co is included in the reaction mixture gas, the rate of precipitation of artificial diamond can be further improved.
実施例 ２
実施に際して、第２図に示される装置を用い、石英製反
応容器（１）の外径：５０ｍφ、基体（５）：平面１２
．７ｍｍＸ厚さ４．８間の寸法をもった炭化タングステ
ン基超硬合金（Ｃｏ：６重量％。Example 2 In carrying out the experiment, the apparatus shown in FIG. 2 was used, the outer diameter of the quartz reaction vessel (1) was 50 mφ, and the substrate (5) was flat 12
．． Tungsten carbide-based cemented carbide (Co: 6% by weight) with dimensions of 7mm x thickness 4.8mm.
ＷＣ：残シ）製板材、
反応混合ガス組成：容量割合で、Ｈ２／Ｃ２Ｈ２／Ｃ０
ｗ１ｏｏ ： ５ ： １゜
雰囲気圧力ニ １０ ｔｏｒｒ。WC: Residue) plate material, reaction mixture gas composition: H2/C2H2/C0 in volume ratio
w1oo: 5: 1° Atmospheric pressure: 10 torr.
高周波コイル（６）への印加条件（周波数：１３．５６
ＭＨｚ、出カニ５００Ｗ）、
反応時間：１時間、
の条件で実施したところ、前記基体５の表面には平均層
厚で５μｍの人工ダイヤモンド膜が形成された。Application conditions to high frequency coil (6) (frequency: 13.56
MHz, power output 500W), reaction time: 1 hour, and an artificial diamond film with an average layer thickness of 5 μm was formed on the surface of the substrate 5.
この結果得られた人工ダイヤモンドは、同じくヌープ硬
さで７５００ ｋｇ／ｍｙｉ、以上の高硬度を示し、か
つＸ線回折でも天然ダイヤモンドと同様の回折結果を示
しだ。The resulting artificial diamond also showed a high hardness of over 7,500 kg/myi on the Knoop hardness, and also showed the same diffraction results as natural diamond in X-ray diffraction.
一方、同様に比較の目的で、反応混合ガス中にＣＯを配
合せず、その組成をＨ２／ Ｃ２Ｈ２＝ １００ ／
５とする以外は同一の条件で反応を行なわしめたところ
、基体表面には平均層厚で０８μｍのわずかな人工ダイ
ヤモンドしか析出生成することができなかった。On the other hand, for the purpose of comparison, CO was not added to the reaction mixture gas and its composition was changed to H2/C2H2=100/
When the reaction was carried out under the same conditions except that No. 5 was used, only a small amount of artificial diamond with an average layer thickness of 08 μm could be precipitated on the surface of the substrate.
実施例 ３
同様に実施に際して、第３図に示される装置を用い、
石英製反応容器（１）の外径：３０ｕφ、基体（５）：
平面１２．’７ｍｘＸ厚さ４８朋の寸法をもった炭化タ
ングステン基超硬合金（ＴｉＣ：１０重量％、 Ｃｏ：
７重量楚、ＷＣ：残シ）製板材、反応混合ガス組成：
容量割合で、Ｈ２／ ＣＩ−（４／Ｃ０−１００１５／
３、
雰囲気圧力ニ ５ ｔｏｒｒ。Example 3 In the same manner, the apparatus shown in FIG. 3 was used, and the outer diameter of the quartz reaction vessel (1) was 30 uφ, and the substrate (5) was
Plane 12. Tungsten carbide-based cemented carbide (TiC: 10% by weight, Co:
7 weight, WC: residual) plate material, reaction mixture gas composition:
In terms of capacity ratio, H2/CI-(4/C0-10015/
3. Atmospheric pressure: 5 torr.
マイクロ波： ２４５０ ＭＨｚ。Microwave: 2450 MHz.
反応時間：１時間、
の条件でマイクロ波によるプラズマ放電を一利用して実
施した。この場合前記基体５の表面に平均層厚で４５μ
ｍの人工ダイヤモンドが形成された。The reaction time was 1 hour, and the reaction was carried out using microwave plasma discharge under the following conditions. In this case, the average layer thickness is 45 μm on the surface of the base 5.
m artificial diamonds were formed.
この結果得られた人工ダイヤモンドは、天然ダイヤモン
ドと同等のヌープ硬さで８ｏｏｏｋｇ／ｍｉＯ高硬度を
示し、かつＸ線回折でも天然ダイヤモンドと同じ回折結
果を示した。The artificial diamond obtained as a result showed a high hardness of 800 kg/miO with a Knoop hardness equivalent to that of natural diamond, and also showed the same diffraction results as natural diamond in X-ray diffraction.
また、比較の目的で、反応混合ガスの組成を、従来人工
ダイヤモンドの析出生成方法の場合と同じ、容量割合で
Ｈ２／ ＣＨａ ＝ １００ ／ ５とする以外は、同
一の条件で反応を行なわしめたところ、基体５の表面に
は平均層厚で０．８μｍのダイヤモンドしか形成しなか
った。In addition, for the purpose of comparison, the reaction was carried out under the same conditions except that the composition of the reaction mixture gas was set to a volume ratio of H2/CHa = 100/5, which is the same as in the case of the conventional artificial diamond precipitation method. However, diamond with an average layer thickness of only 0.8 μm was formed on the surface of the substrate 5.
上述のように、この発明の方法によれば、反応混合ガス
中に一酸化炭素（ＣＯ）を配合金有させることによって
、人工ダイヤモンドを従来の炭化水素と水素で構成され
た反応混合ガスを使用する方法に比して一段と速い析出
生成速度で形成することができるのである。As mentioned above, according to the method of the present invention, by adding carbon monoxide (CO) to the reaction mixture gas, artificial diamonds can be produced using a conventional reaction mixture gas composed of hydrocarbons and hydrogen. It is possible to form a precipitate at a much faster rate than with other methods.
第１〜３図はいずれも人工ダイヤモンドの析出生成装置
を示す概略断面図である。
１・・反応容器、 ２・・・反応混合ガス導入管、：３
・熱電子放射材としてのフィラメント、４９３９合板、
５“基体、
６ 高周波コイル、７−導波管。
出願人 三菱金属株式会社
代理人 富 １） 和 夫 外１名
≠１図
采２図
第３図
手 続 補 正 書 （自 発）
昭和５９年 ４月１３日
特願昭５９−４４６４９号
２、発明の名称
人ロダイＡ７モンドの析出生成方法
３、補正をする者
事件との関係 特認４出願人
住所 東京都千代田区大手町−丁目５１２号氏名（名称
＞ （６２Ｇ）三菱金属株式会社代表者 永 野 健
４、代理人
住所 東京都千代田区神田錦町−丁目２３番地宗保第二
ビル８階
〒１０１ 電話（０３） ２３３−１（３７６・１６７
７７、補正の内容 別紙の通り
（１）明細書、第８頁、発明の詳細な説明の項、第７行
、
ｒ Ｈ２／ Ｃ２Ｈ２／ Ｃｏ Ｊとあるを、ｒ ｔ１
２／ ０２１６ ／ ＣＯＪと訂正する。
以上1 to 3 are schematic cross-sectional views showing an apparatus for producing artificial diamond. 1... Reaction container, 2... Reaction mixed gas introduction pipe, :3
・Filament as thermionic emitting material, 4939 plywood,
5 "Substrate, 6 - High frequency coil, 7 - Waveguide. Applicant: Mitsubishi Metals Co., Ltd. Agent Tomi 1) Kazuo and 1 other person ≠ 1 figure 2 figure 3 procedure amendment (self-motivated) 1972 Patent Application No. 59-44649 (April 13, 2017) 2, Name of the invention: Lodi A7 Monde's precipitation production method 3, Relationship with the person making the amendment case Special approval 4 Applicant address: 512-chome, Otemachi, Chiyoda-ku, Tokyo Name (62G) Mitsubishi Metals Co., Ltd. Representative Ken Nagano 4, Agent address 8th floor, Soho Daini Building, 23 Kanda Nishikicho-chome, Chiyoda-ku, Tokyo 101 Telephone (03) 233-1 (376-167)
77. Contents of the amendment As shown in the attached sheet (1) Specification, page 8, detailed description of the invention, line 7, r H2/ C2H2/ Co J, r t1
Corrected as 2/ 0216 / COJ. that's all
Claims (1)
よるプラズマ放電、あるいはマイクロ波によるプラズマ
放電などにより活性化された加熱反応混合ガスの流れの
中に置かれた加熱基体の表面に人工ダイ−ヤモンドを析
出生成せしめる方法において、［）１」記反応混合ガス
に００５〜１０容量係の一酸化炭素を含廟すしめて、前
記基体表面へのダイヤモンドの析出生成速度の向上をは
かることを特徴とする人工ダイヤモンドの析出生成方法
。An artificial die is placed on the surface of a heated substrate placed in a flow of a heated reaction mixture consisting of hydrocarbons and hydrogen and activated by a thermionic radiation material, plasma discharge by high frequency, plasma discharge by microwave, etc. The method for precipitating and forming diamond, characterized in that carbon monoxide of 005 to 10 by volume is included in the reaction mixture gas as described in [1] above in order to improve the rate of forming diamond on the surface of the substrate. A method for producing artificial diamond precipitation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59044649A JPS60191097A (en) | 1984-03-08 | 1984-03-08 | Crystallizing method of artificial diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59044649A JPS60191097A (en) | 1984-03-08 | 1984-03-08 | Crystallizing method of artificial diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60191097A true JPS60191097A (en) | 1985-09-28 |
| JPS6327319B2 JPS6327319B2 (en) | 1988-06-02 |
Family
ID=12697286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59044649A Granted JPS60191097A (en) | 1984-03-08 | 1984-03-08 | Crystallizing method of artificial diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60191097A (en) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61158899A (en) * | 1985-07-31 | 1986-07-18 | Kyocera Corp | Production of diamond film |
| WO1987003307A1 (en) * | 1985-11-25 | 1987-06-04 | Showa Denko Kabushiki Kaisha | Process for synthesizing diamond |
| JPS6321292A (en) * | 1986-07-11 | 1988-01-28 | Kyocera Corp | Production of diamond film |
| JPS6321291A (en) * | 1986-07-11 | 1988-01-28 | Kyocera Corp | Production of diamond film |
| JPS63166798A (en) * | 1986-12-27 | 1988-07-09 | Kyocera Corp | Production of diamond film |
| JPS63166733A (en) * | 1986-12-27 | 1988-07-09 | Kyocera Corp | Production of diamond film |
| US4767608A (en) * | 1986-10-23 | 1988-08-30 | National Institute For Research In Inorganic Materials | Method for synthesizing diamond by using plasma |
| JPH01130520A (en) * | 1987-11-17 | 1989-05-23 | Idemitsu Petrochem Co Ltd | Synthesizing of diamond semiconductor |
| US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
| US4869924A (en) * | 1987-09-01 | 1989-09-26 | Idemitsu Petrochemical Company Limited | Method for synthesis of diamond and apparatus therefor |
| US4985227A (en) * | 1987-04-22 | 1991-01-15 | Indemitsu Petrochemical Co., Ltd. | Method for synthesis or diamond |
| WO1991014572A1 (en) * | 1990-03-20 | 1991-10-03 | Diamonex, Incorporated | Diamond-on-a-substrate for electronic applications |
| US5068871A (en) * | 1989-08-04 | 1991-11-26 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Process for synthesizing diamond and apparatus therefor |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
| US5270114A (en) * | 1987-03-30 | 1993-12-14 | Crystallume | High thermal conductivity diamond/non-diamond composite materials |
| US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US5273825A (en) * | 1987-03-30 | 1993-12-28 | Crystallume | Article comprising regions of high thermal conductivity diamond on substrates |
| US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
| US5277975A (en) * | 1987-03-30 | 1994-01-11 | Crystallume | High thermal-conductivity diamond-coated fiber articles |
| US5400738A (en) * | 1989-03-07 | 1995-03-28 | Sumitomo Electric Industries, Ltd. | Method for producing single crystal diamond film |
| US5633088A (en) * | 1987-03-30 | 1997-05-27 | Crystallume | Diamond film and solid particle composite structure and methods for fabricating same |
| US6207281B1 (en) | 1988-03-07 | 2001-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
-
1984
- 1984-03-08 JP JP59044649A patent/JPS60191097A/en active Granted
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61158899A (en) * | 1985-07-31 | 1986-07-18 | Kyocera Corp | Production of diamond film |
| JPH0566360B2 (en) * | 1985-07-31 | 1993-09-21 | Kyocera Corp | |
| WO1987003307A1 (en) * | 1985-11-25 | 1987-06-04 | Showa Denko Kabushiki Kaisha | Process for synthesizing diamond |
| US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
| JPS6321292A (en) * | 1986-07-11 | 1988-01-28 | Kyocera Corp | Production of diamond film |
| JPS6321291A (en) * | 1986-07-11 | 1988-01-28 | Kyocera Corp | Production of diamond film |
| US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
| US4767608A (en) * | 1986-10-23 | 1988-08-30 | National Institute For Research In Inorganic Materials | Method for synthesizing diamond by using plasma |
| JPS63166798A (en) * | 1986-12-27 | 1988-07-09 | Kyocera Corp | Production of diamond film |
| JPS63166733A (en) * | 1986-12-27 | 1988-07-09 | Kyocera Corp | Production of diamond film |
| US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
| US5284709A (en) * | 1987-03-30 | 1994-02-08 | Crystallume | Diamond materials with enhanced heat conductivity |
| US5270114A (en) * | 1987-03-30 | 1993-12-14 | Crystallume | High thermal conductivity diamond/non-diamond composite materials |
| US5633088A (en) * | 1987-03-30 | 1997-05-27 | Crystallume | Diamond film and solid particle composite structure and methods for fabricating same |
| US5304424A (en) * | 1987-03-30 | 1994-04-19 | Crystallume | High thermal conductivity diamond/non-diamond composite materials |
| US5277975A (en) * | 1987-03-30 | 1994-01-11 | Crystallume | High thermal-conductivity diamond-coated fiber articles |
| US5273825A (en) * | 1987-03-30 | 1993-12-28 | Crystallume | Article comprising regions of high thermal conductivity diamond on substrates |
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
| US4985227A (en) * | 1987-04-22 | 1991-01-15 | Indemitsu Petrochemical Co., Ltd. | Method for synthesis or diamond |
| US4984534A (en) * | 1987-04-22 | 1991-01-15 | Idemitsu Petrochemical Co., Ltd. | Method for synthesis of diamond |
| US4869924A (en) * | 1987-09-01 | 1989-09-26 | Idemitsu Petrochemical Company Limited | Method for synthesis of diamond and apparatus therefor |
| JPH0573328B2 (en) * | 1987-11-17 | 1993-10-14 | Idemitsu Petrochemical Co | |
| JPH01130520A (en) * | 1987-11-17 | 1989-05-23 | Idemitsu Petrochem Co Ltd | Synthesizing of diamond semiconductor |
| US6265070B1 (en) | 1988-03-07 | 2001-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US7144629B2 (en) | 1988-03-07 | 2006-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6583481B2 (en) | 1988-03-07 | 2003-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6207281B1 (en) | 1988-03-07 | 2001-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US5400738A (en) * | 1989-03-07 | 1995-03-28 | Sumitomo Electric Industries, Ltd. | Method for producing single crystal diamond film |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| US5068871A (en) * | 1989-08-04 | 1991-11-26 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Process for synthesizing diamond and apparatus therefor |
| WO1991014572A1 (en) * | 1990-03-20 | 1991-10-03 | Diamonex, Incorporated | Diamond-on-a-substrate for electronic applications |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327319B2 (en) | 1988-06-02 |
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