JPS6320911B2 - - Google Patents
Info
- Publication number
- JPS6320911B2 JPS6320911B2 JP59173786A JP17378684A JPS6320911B2 JP S6320911 B2 JPS6320911 B2 JP S6320911B2 JP 59173786 A JP59173786 A JP 59173786A JP 17378684 A JP17378684 A JP 17378684A JP S6320911 B2 JPS6320911 B2 JP S6320911B2
- Authority
- JP
- Japan
- Prior art keywords
- cermet member
- artificial diamond
- diamond film
- cermet
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010432 diamond Substances 0.000 claims description 45
- 229910003460 diamond Inorganic materials 0.000 claims description 44
- 239000011195 cermet Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 15
- 239000011541 reaction mixture Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 23
- 238000001556 precipitation Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 iron group metals Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、サーメツト部材の表面に人工ダイ
ヤモンド皮膜を析出形成せしめるに際して、前記
サーメツト部材の表面に反応初期に析出するダイ
ヤモンド結晶核の増大をはかり、もつて微細組織
にして密着性のすぐれた人工ダイヤモンド皮膜を
析出形成する方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention aims to increase the number of diamond crystal nuclei that precipitate on the surface of the cermet member at the initial stage of the reaction when forming an artificial diamond film on the surface of the cermet member. The present invention relates to a method for depositing and forming an artificial diamond film having a fine structure and excellent adhesion.
一般に、分散相が主として周期律表の４ａ，５
ａおよび６ａ族金属、並びにSiの炭化物、窒化
物、炭窒化物、および硼化物のうちの１種以上で
構成され、一方結合相が主として鉄族金属のうち
の１種以上で構成されたサーメツト部材が知られ
ている。また、このサーメツト部材の表面に人工
ダイヤモンド皮膜を析出形成することも知られて
おり、この方法には多数の方法が提案されている
が、この中で反応混合ガスを加熱し、活性化する
手段として、
(a) 熱電子放射材、
(b) 高周波によるプラズマ放電、
(c) マイクロ波によるプラズマ放電、
以上(a)〜(c)のいずれかを採用する方法が代表的方
法として注目されている。
Generally, the dispersed phase is mainly 4a and 5 of the periodic table.
A cermet composed of one or more of group a and 6a metals, and carbides, nitrides, carbonitrides, and borides of Si, while the binder phase is mainly composed of one or more of iron group metals. parts are known. It is also known to deposit and form an artificial diamond film on the surface of this cermet member, and a number of methods have been proposed for this method, among which a method of heating and activating the reaction mixture gas is known. (a) Thermionic emitting materials, (b) Plasma discharge by high frequency waves, (c) Plasma discharge by microwaves. Methods that employ any of the above (a) to (c) are attracting attention as representative methods. There is.
すなわち、上記(a)方法は、第１図に概略断面図
で示されるように、石英製反応容器１内の上部に
開口する反応混合ガス導入管２によつて流入され
た、主として炭化水素と水素で構成された反応混
合ガスを熱電子放射材としての例えば金属タング
ステン製フイラメント３および台板４上に支持さ
れたサーメツト部材５を通して下方に流し、この
間反応容器１内の雰囲気圧力を0.1〜300torrに保
持すると共に、フイラメント３を1500〜2500℃に
加熱して、反応混合ガスの加熱活性化と、所定間
隔下方に配置されたサーメツト部材５の表面の
300〜1300℃の範囲内の温度への加熱をはかり、
この状態で所定時間の反応を行なわしめることに
よりサーメツト部材５の表面に人工ダイヤモンド
皮膜を析出形成する方法であり、例えば特開昭58
−91100号公報に記載される方法がこの方法に相
当する方法である。 That is, as shown in the schematic cross-sectional view in FIG. A reaction mixture gas composed of hydrogen is flowed downward through a filament 3 made of metal tungsten as a thermionic emitting material and a cermet member 5 supported on a base plate 4, and during this time the atmospheric pressure in the reaction vessel 1 is maintained at 0.1 to 300 torr. At the same time, the filament 3 is heated to 1500 to 2500°C to activate the reaction mixture gas and to heat the surface of the cermet member 5 disposed below at a predetermined interval.
Measure heating to a temperature within the range of 300 to 1300℃,
This is a method of depositing and forming an artificial diamond film on the surface of the cermet member 5 by carrying out a reaction for a predetermined time in this state.
The method described in Japanese Patent No.-91100 is a method corresponding to this method.
また、上記(b)方法は、同じく第２図に概略断面
図で示されるように、石英製反応容器１内の中央
部にサーメツト部材５を置き、この反応容器１の
一方側に設けた反応混合ガス導入管２から主とし
て炭化水素と水素で構成された反応混合ガスを流
入させ、一方反応容器１の他方側から排気し、こ
の間、反応容器１内の雰囲気圧力を数torr〜数
10torrに保持すると共に、反応容器１の中央外周
部に設けた高周波コイル６に、例えば周波数：
13.56MHz、出力：500Wの条件を付加して反応容
器１内のサーメツト部材５の周囲にプラズマ放電
を誘起させ、このプラズマ放電によつて反応混合
ガスの加熱活性化とサーメツト部材表面温度の上
昇をはかり、この状態で所定時間の反応を行なわ
しめることによりサーメツト部材の表面に人工ダ
イヤモンド皮膜を析出形成する方法であり、例え
ば特開昭58−135117号公報に記載されている方法
がこれに相当する方法である。 In addition, as shown in the schematic cross-sectional view in FIG. A reaction mixture gas mainly composed of hydrocarbons and hydrogen is introduced from the mixed gas introduction pipe 2, and exhausted from the other side of the reaction vessel 1. During this time, the atmospheric pressure inside the reaction vessel 1 is kept at several torr to several torr.
10 torr, and a high frequency coil 6 provided at the center outer periphery of the reaction vessel 1 has a frequency of, for example:
Plasma discharge was induced around the cermet member 5 in the reaction vessel 1 by adding the conditions of 13.56 MHz and output: 500 W, and this plasma discharge activated the heating of the reaction mixture gas and increased the surface temperature of the cermet member. This is a method of depositing and forming an artificial diamond film on the surface of a cermet member by carrying out a reaction for a predetermined period of time in this state; for example, the method described in JP-A-58-135117 corresponds to this method. It's a method.
さらに、上記(c)方法は、同様に第３図に概略断
面図で示されるように、石英製反応容器１内の中
央部にサーメツト部材５を置き、この反応容器１
の上方に設けた反応混合ガス導入管２から主とし
て炭化水素と水素で構成された反応混合ガスを流
入させ、一方反応容器１の下方から排気し、この
間、反応容器内の雰囲気圧力を0.1〜300torrに保
持し、さらに反応容器１の中央外周部に設けた導
波管７を通して供給された、例えば2450MHzのマ
イクロ波をプラズマ調整用プランジヤ８によつて
調整して、反応容器１内のサーメツト部材５の周
囲にプラズマ放電を発生させ、このプラズマ放電
によつて反応混合ガスの加熱活性化とサーメツト
部材表面温度の上昇をはかり、この状態で所定時
間の反応を行なわしめることによりサーメツト部
材の表面に人工ダイヤモンド皮膜を析出形成する
方法であり、例えば特開昭58−110494号公報に記
載される方法がこの方法に相当する方法である。 Furthermore, in the above method (c), as similarly shown in the schematic cross-sectional view in FIG.
A reaction mixture gas mainly composed of hydrocarbons and hydrogen is introduced from the reaction mixture gas inlet pipe 2 provided above, and is exhausted from the bottom of the reaction vessel 1. During this time, the atmospheric pressure inside the reaction vessel is maintained at 0.1 to 300 torr. The cermet member 5 in the reaction container 1 is maintained at A plasma discharge is generated around the cermet member, and this plasma discharge heats and activates the reaction mixture gas and increases the surface temperature of the cermet member, and by allowing the reaction to occur for a predetermined time in this state, an artificial material is formed on the surface of the cermet member. This is a method of depositing and forming a diamond film, and for example, the method described in JP-A-58-110494 is a method corresponding to this method.
しかし、これらの人工ダイヤモンド皮膜析出形
成方法においては、いずれも共通して反応初期に
サーメツト部材の表面に析出するダイヤモンド結
晶核の数が少なく、一方人工ダイヤモンドはこの
結晶核を中心に成長し、膜状を呈するようになる
ものであるため、析出形成した人工ダイヤモンド
皮膜は、組織が粗く、サーメツト部材表面への密
着性に劣るものであつた。
However, in all of these artificial diamond film precipitation formation methods, the number of diamond crystal nuclei that precipitate on the surface of the cermet member at the initial stage of the reaction is small, whereas the artificial diamond grows around these crystal nuclei and forms a film. Therefore, the precipitated artificial diamond film had a coarse structure and poor adhesion to the surface of the cermet member.
そこで、本発明者等は、上述のような観点か
ら、サーメツト部材の表面に組織が細かく、かつ
密着性のすぐれた人工ダイヤモンド皮膜を析出形
成すべく研究を行なつた結果、サーメツト部材の
表面に人工ダイヤモンド皮膜を析出形成するに先
だつて、前処理として、前記サーメツト部材の表
面にエツチング処理を施して、前記サーメツト部
材の表面における結合相を除去し、もつて同分散
相の表面面積率を増大させ、ついでこの状態で、
通常の方法で人工ダイヤモンド皮膜の析出形成を
行なうと、前記の表面面積率が増大した分散相が
反応初期において析出するダイヤモンド結晶核を
著しく増大させるように作用することから、形成
された人工ダイヤモンド皮膜は、微細組織にし
て、密着性のすぐれたものとなるという知見を得
たのである。
Therefore, from the above-mentioned viewpoint, the present inventors conducted research to deposit and form an artificial diamond film with a fine structure and excellent adhesion on the surface of a cermet member. Prior to depositing and forming the artificial diamond film, as a pretreatment, the surface of the cermet member is etched to remove the binder phase on the surface of the cermet member, thereby increasing the surface area ratio of the dispersed phase. Then, in this state,
When an artificial diamond film is formed by precipitation using a normal method, the dispersed phase with an increased surface area ratio acts to significantly increase the number of diamond crystal nuclei precipitated at the initial stage of the reaction, so that the artificial diamond film formed is It was discovered that this material has a fine structure and has excellent adhesion.
したがつて、この発明は、上記知見にもとづい
てなされたものであつて、主成分が炭化水素と水
素からなり、かつ熱電子放射材、高周波によるプ
ラズマ放電、あるいはマイクロ波によるプラズマ
放電などにより活性化された加熱反応混合ガスの
流れの中に、加熱されたサーメツト部材を置くこ
とにより前記サーメツト部材の表面に人工ダイヤ
モンド皮膜を析出形成するに際して、その前処理
として、前記サーメツト部材の表面をエツチング
処理して、これを構成する結合相を除去し、もつ
て人工ダイヤモンド皮膜が形成されるサーメツト
部材の表面を分散相を主体としたものとし、この
状態のサーメツト部材表面に人工ダイヤモンド皮
膜の析出形成を施すことによつて、ダイヤモンド
結晶核の反応初期における析出数の増大をはかる
点に特徴を有するものである。 Therefore, the present invention has been made based on the above knowledge, and consists of hydrocarbons and hydrogen as main components, and is activated by a thermionic emitting material, plasma discharge by high frequency, plasma discharge by microwave, etc. When depositing and forming an artificial diamond film on the surface of the cermet member by placing the heated cermet member in the flow of the heated reaction mixture gas, the surface of the cermet member is etched as a pretreatment. Then, the binder phase constituting this is removed, and the surface of the cermet member on which the artificial diamond film is formed is made mainly of the dispersed phase, and the artificial diamond film is deposited and formed on the surface of the cermet member in this state. This method is characterized by increasing the number of diamond crystal nuclei precipitated at the initial stage of the reaction.
つぎに、この発明の方法を実施例により具体的
に説明する。
Next, the method of the present invention will be specifically explained using examples.
実施例 １
サーメツト部材として、Co：６重量％、WCお
よび不可避不純物：残りからなる組成を有する切
削チツプを用意し、この切削チツプを７％HNO3
溶液中に３時間浸漬して、その表面をエツチング
処理し、これを構成する結合相を除去して、前記
切削チツプの表面をWCからなる分散相を主体と
するものとした。Example 1 A cutting chip having a composition consisting of 6% by weight of Co, WC, and the remainder of unavoidable impurities was prepared as a cermet member, and this cutting chip was mixed with 7% HNO 3
The cutting tip was immersed in a solution for 3 hours to etch the surface and remove the binder phase constituting it, so that the surface of the cutting tip consisted mainly of a dispersed phase consisting of WC.
ついで、第１図に示される装置を用い、
反応容器１：外径50mmφを有する石英製のも
の、
反応混合ガス組成：容量割合で、CH4／H2＝
１／100、
金属タングステン製フイラメント３と切削チツ
プ５の表面との間隔：30mm、
雰囲気圧力：20torr、
フイラメント３の加熱温度：2000℃、
フイラメントによる切削チツプ５の加熱温度：
700℃
処理時間：２時間
の条件で上記エツチング処理後の切削チツプの表
面に人工ダイヤモンド析出形成処理を行なつた。
この結果前記の前処理としてエツチング処理を施
して切削チツプの表面には面積率で60％を占める
割合で人工ダイヤモンドが析出していた。 Next, using the apparatus shown in Fig. 1, reaction vessel 1: one made of quartz with an outer diameter of 50 mmφ, reaction mixture gas composition: volume ratio, CH 4 /H 2 =
1/100, Distance between the metal tungsten filament 3 and the surface of the cutting tip 5: 30 mm, Atmospheric pressure: 20 torr, Heating temperature of the filament 3: 2000℃, Heating temperature of the cutting tip 5 by the filament: 700℃ Processing time: 2 Artificial diamond precipitation formation treatment was performed on the surface of the cutting chip after the above-mentioned etching treatment under certain conditions.
As a result, artificial diamond was precipitated on the surface of the cutting chip by etching as the pre-treatment described above, occupying 60% of the surface area.
一方、比較の目的で、エツチング処理を行なわ
ない以外は同一の条件で人工ダイヤモンド析出形
成処理を行なつたところ、面積率で30％の人工ダ
イヤモンドが析出しているにすぎなかつた。 On the other hand, for the purpose of comparison, when artificial diamond precipitation was performed under the same conditions except that no etching treatment was performed, only 30% of the area ratio of artificial diamond was deposited.
これらの結果から、切削チツプの表面をあらか
じめエツチング処理することによつて、反応初期
におけるダイヤモンド結晶核の増大をはかること
が明らかである。 From these results, it is clear that by etching the surface of the cutting tip in advance, the number of diamond crystal nuclei can be increased at the initial stage of the reaction.
さらに、同一の条件で人工ダイヤモンド析出形
成処理を６時間行なつたところ、前処理としてエ
ツチング処理を施した切削チツプの表面には、平
均結晶粒径：2μmの微細にして、3μmの平均層厚
を有する人工ダイヤモンド皮膜が形成されていた
のに対して、エツチング処理を行なわない切削チ
ップの表面に形成された人工ダイヤモンド皮膜
は、その層厚はほとんど同じであつたが、その平
均結晶粒径は4μmと粗いものであつた。 Furthermore, when artificial diamond precipitation formation treatment was performed for 6 hours under the same conditions, the surface of the cutting chip that had been etched as a pretreatment was fine with an average crystal grain size of 2 μm and an average layer thickness of 3 μm. On the other hand, the artificial diamond film formed on the surface of the cutting tip without etching treatment had almost the same layer thickness, but the average crystal grain size was It was as coarse as 4 μm.
また、この結果得られた両切削チツプについ
て、
被削材：Al−12重量％Si合金、
切削速度：500m／min
送り：0.1mm／rev.
切込み：１mm
切削時間：30min
の条件で連続切削試験を行ない、試験後の切刃の
状態を観察したところ、エツチング処理を行なつ
た切削チツプには、摩耗もチツピングもみられ
ず、全く正常であつたのに対して、エツチング処
理を行なわない切削チツプは摩耗はないものの、
剥離現象が見られ、前処理としてエツチング処理
を行なうことによつて人工ダイヤモンド皮膜の密
着性が著しく向上するようになることが確認され
た。 In addition, continuous cutting tests were conducted on both of the resulting cutting chips under the following conditions: work material: Al-12 wt% Si alloy, cutting speed: 500 m/min, feed: 0.1 mm/rev. depth of cut: 1 mm, cutting time: 30 min. When we observed the condition of the cutting edge after the test, we found that the cutting tip that had been etched was completely normal with no wear or chipping, whereas the cutting tip that had not been etched was completely normal. Although there is no wear,
A peeling phenomenon was observed, and it was confirmed that the adhesion of the artificial diamond film was significantly improved by performing the etching treatment as a pretreatment.
実施例 ２
サーメツト部材として、TiC：10％、Co：10
％、WCおよび不可避不純物：残りからなる組成
（以上重量％）を有する切削チツプを用意し、こ
の切削チツプに10％・HCl溶液中に６時間浸漬の
エツチング処理を施して、その表面における結合
相を除去して、TiCとWCを主体とする分散相か
らなるものとした。Example 2 As a cermet member, TiC: 10%, Co: 10
%, WC, and unavoidable impurities: A cutting chip having a composition (more than weight %) consisting of the remainder is prepared, and the cutting chip is subjected to an etching treatment by immersion in a 10% HCl solution for 6 hours to remove the bonding phase on its surface. was removed, resulting in a dispersed phase consisting mainly of TiC and WC.
ついで、第２図に示される装置を用い、
反応容器１：外径40mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2＝
２／100、
雰囲気圧力：10torr
高周波コイル６への印加条件：周波数13.56M
Hz、出力：1KW
処理時間：２時間
の条件で人工ダイヤモンド析出形成処理を行なつ
たところ、上記の切削チツプの表面には面積率で
75％を占める割合で人工ダイヤモンドが析出して
いた。 Then, using the apparatus shown in Fig. 2, reaction vessel 1: quartz tube with an outer diameter of 40 mmφ, reaction mixture gas composition: volume ratio, CH 4 /H 2 =
2/100, Atmospheric pressure: 10torr Application conditions to high frequency coil 6: Frequency 13.56M
Hz, output: 1KW, processing time: 2 hours, the artificial diamond precipitation formation process was performed, and as a result, the surface of the cutting chip mentioned above had a certain area percentage.
Artificial diamonds accounted for 75% of the deposits.
一方、比較の目的で、エツチング処理を行なわ
ない以外は同一の条件で人工ダイヤモンド析出形
成処理を行なつた切削チツプの表面には面積率で
僅か40％を占める割合でしか人工ダイヤモンドが
析出しないものであつた。 On the other hand, for the purpose of comparison, artificial diamond was precipitated on the surface of a cutting chip that was subjected to artificial diamond precipitation forming treatment under the same conditions except that no etching treatment was performed. It was hot.
実施例 ３
サーメツト部材として、Ni：15％、Mo：10
％、WC：25％、TiCおよび不可避不純物：残り
からなる組成（以上重量％）を有する切削チツプ
を用意し、この切削チツプに５％硝酸溶液中に６
時間浸漬のエツチング処理を施して、その表面に
おける結合相形成成分であるNiおよびMoを除去
し、もつて切削チツプの表面を主体がWCちTiC
からなる分散相で構成されるものとした。Example 3 As a cermet member, Ni: 15%, Mo: 10
%, WC: 25%, TiC and unavoidable impurities: the remainder (weight%).
A time immersion etching process is applied to remove Ni and Mo, which are binder phase forming components on the surface, and the surface of the cutting chip is made up of mainly WC and TiC.
The dispersed phase was made up of:
ついで、第３図に示される装置を用い、
反応容器１：外径50mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2＝
２／100
雰囲気圧力：20torr
マイクロ波：2450MHz（出力：300W）、
処理時間：２時間
の条件で人工ダイヤモンド析出形成処理を行なつ
たところ、上記の切削チツプの表面には面積率で
72％を占める割合で人工ダイヤモンドが析出して
おり、このことは反応初期におけるダイヤモンド
結晶核の析出が多量であることを示している。 Then, using the apparatus shown in Fig. 3, reaction vessel 1: quartz tube with an outer diameter of 50 mmφ, reaction mixture gas composition: volume ratio, CH 4 /H 2 =
2/100 When artificial diamond precipitation was performed under the conditions of atmospheric pressure: 20 torr, microwave: 2450 MHz (output: 300 W), and processing time: 2 hours, the surface of the cutting chip mentioned above had a large area percentage.
Artificial diamond precipitated at a rate of 72%, indicating that a large amount of diamond crystal nuclei were precipitated at the initial stage of the reaction.
一方、比較の目的で、エツチング処理を行なわ
ない以外は同一の条件で人工ダイヤモンド析出形
成処理を行なつた切削チツプの表面には面積率で
40％を占める割合でしか人工ダイヤモンドの析出
が見られず、相対的にエツチング処理を行なつた
場合に比してダイヤモンド結晶核の析出が少ない
ことを示している。 On the other hand, for the purpose of comparison, the surface area ratio of a cutting chip that was subjected to artificial diamond precipitation formation treatment under the same conditions except that no etching treatment was performed.
Precipitation of artificial diamond was observed in only 40% of the cases, indicating that the precipitation of diamond crystal nuclei was relatively smaller than in the case of etching treatment.
上述のように、この発明の方法によれば、サー
メツト部材の表面に人工ダイヤモンド皮膜を析出
形成するに先だつて、その表面をエツチング処理
して、サーメツト部材を構成する結合相を除去
し、実質的にサーメツト部材の表面が分散相で構
成されるようにすることによつて、反応初期にお
けるダイヤモンド結晶核の析出形成割合を著しく
増大させることができ、これによつて形成される
人工ダイヤモンド皮膜は微細組織を有するように
なると共に、密着性のすぐれたものとなり、実用
に際して剥離などの発生が皆無となるなどの工業
上有用な効果が得られるのである。 As described above, according to the method of the present invention, prior to depositing and forming an artificial diamond film on the surface of a cermet member, the surface is etched to remove the binder phase constituting the cermet member, and substantially By making the surface of the cermet component consist of a dispersed phase, the rate of precipitation of diamond crystal nuclei at the initial stage of the reaction can be significantly increased, and the artificial diamond film formed thereby has fine particles. In addition to having a structure, it also has excellent adhesion, and industrially useful effects such as no peeling during practical use can be obtained.
第１図、第２図および第３図はいずれも人工ダ
イヤモンド皮膜の析出形成装置を示す概略断面図
である。
１……反応容器、２……反応混合ガス導入管、
３……熱電子放射材としてのフイラメント、４…
…台板、５……サーメツト部材、６……高周波コ
イル、７……導波管。
FIG. 1, FIG. 2, and FIG. 3 are all schematic cross-sectional views showing an apparatus for depositing an artificial diamond film. 1... Reaction container, 2... Reaction mixed gas introduction pipe,
3... Filament as thermionic emitting material, 4...
... base plate, 5 ... cermet member, 6 ... high frequency coil, 7 ... waveguide.
Claims (1)
子放射材、高周波によりプラズマ放電、あるいは
マイクロ波によるプラズマ放電などにより活性化
された加熱反応混合ガスの流れの中に、加熱され
たサーメツト部材を置くことによつて前記サーメ
ツト部材の表面に人工ダイヤモンド皮膜を析出形
成するに先だつて、前処理として前記サーメツト
部材の表面にエツチング処理を施して、前記サー
メツト部材の表面における結合相を除去すること
によつて、ダイヤモンドの初期析出結晶核の増大
をはかることを特徴とするサーメツト部材の表面
に人工ダイヤモンド皮膜を析出形成する方法。1. A heated cermet member is placed in a flow of a heated reaction mixture gas whose main components are hydrocarbons and hydrogen and which is activated by a thermionic radiation material, plasma discharge by high frequency, or plasma discharge by microwaves. Before depositing and forming an artificial diamond film on the surface of the cermet member by placing the cermet member on the surface of the cermet member, etching is performed on the surface of the cermet member as a pre-treatment to remove the binder phase on the surface of the cermet member. Therefore, a method for depositing and forming an artificial diamond film on the surface of a cermet member is characterized by increasing the number of initially precipitated diamond crystal nuclei.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17378684A JPS6152363A (en) | 1984-08-21 | 1984-08-21 | Method for depositing and forming artificial diamond film on surface of cermet member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17378684A JPS6152363A (en) | 1984-08-21 | 1984-08-21 | Method for depositing and forming artificial diamond film on surface of cermet member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6152363A JPS6152363A (en) | 1986-03-15 |
| JPS6320911B2 true JPS6320911B2 (en) | 1988-05-02 |
Family
ID=15967121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17378684A Granted JPS6152363A (en) | 1984-08-21 | 1984-08-21 | Method for depositing and forming artificial diamond film on surface of cermet member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6152363A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994013852A1 (en) * | 1992-12-08 | 1994-06-23 | Osaka Diamond Industrial Co., Ltd. | Superhard film-coated material and method of producing the same |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2595203B2 (en) * | 1985-08-27 | 1997-04-02 | 東芝タンガロイ 株式会社 | High adhesion diamond coated sintered alloy and method for producing the same |
| JPH0672302B2 (en) * | 1985-09-19 | 1994-09-14 | 住友電気工業株式会社 | Manufacturing method of hard carbon film coated cemented carbide |
| DE3630419A1 (en) * | 1986-09-06 | 1988-03-10 | Kernforschungsanlage Juelich | METHOD FOR COATING COMPONENTS EXPOSED TO HIGH THERMAL LOADS WITH AN AMORPHOUS HYDROCARBON LAYER |
| KR920000801B1 (en) * | 1988-02-04 | 1992-01-23 | 이데미쯔세끼유가가꾸 가부시기가이샤 | Method of producing sintered hard metal with diamond film |
| JPH0621360B2 (en) * | 1988-03-28 | 1994-03-23 | 東芝タンガロイ株式会社 | Diamond-coated sintered bond excellent in peel resistance and method for producing the same |
| US5164051A (en) * | 1989-09-22 | 1992-11-17 | Showa Denko K. K. | Method for vapor phase synthesis of diamond on electrochemically treated substrate |
| US5585176A (en) * | 1993-11-30 | 1996-12-17 | Kennametal Inc. | Diamond coated tools and wear parts |
| US5716170A (en) * | 1996-05-15 | 1998-02-10 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
| US6660329B2 (en) | 2001-09-05 | 2003-12-09 | Kennametal Inc. | Method for making diamond coated cutting tool |
| JP4690479B2 (en) * | 2009-08-11 | 2011-06-01 | 住友電気工業株式会社 | Diamond coated tools |
| AT15415U1 (en) * | 2016-07-18 | 2017-08-15 | Ceratizit Austria Gmbh | Method for producing a cemented carbide product and cemented carbide product |
| CN107378904B (en) * | 2017-08-25 | 2019-12-13 | 中国工程物理研究院机械制造工艺研究所 | method for determining specific cutting area of cutting edge of diamond cutter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58126972A (en) * | 1982-01-22 | 1983-07-28 | Sumitomo Electric Ind Ltd | Diamond coated sintered hard alloy tool |
-
1984
- 1984-08-21 JP JP17378684A patent/JPS6152363A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58126972A (en) * | 1982-01-22 | 1983-07-28 | Sumitomo Electric Ind Ltd | Diamond coated sintered hard alloy tool |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994013852A1 (en) * | 1992-12-08 | 1994-06-23 | Osaka Diamond Industrial Co., Ltd. | Superhard film-coated material and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152363A (en) | 1986-03-15 |
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