JPH0474145B2 - - Google Patents
Info
- Publication number
- JPH0474145B2 JPH0474145B2 JP59060348A JP6034884A JPH0474145B2 JP H0474145 B2 JPH0474145 B2 JP H0474145B2 JP 59060348 A JP59060348 A JP 59060348A JP 6034884 A JP6034884 A JP 6034884A JP H0474145 B2 JPH0474145 B2 JP H0474145B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- polishing
- artificial
- artificial diamond
- polishing surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 71
- 229910003460 diamond Inorganic materials 0.000 claims description 67
- 238000005498 polishing Methods 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 229910052758 niobium Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000012071 phase Substances 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000011195 cermet Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000866 electrolytic etching Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000001308 synthesis method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 21
- 238000000227 grinding Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000001556 precipitation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 Cu or Ni Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
この発明は、ダイヤモンド研磨砥石の製造法に
かかり、特に析出生成させた人工ダイヤモンド粒
にて構成された新規なダイヤモンド研磨砥石の製
造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a diamond polishing wheel, and more particularly to a method for manufacturing a novel diamond polishing wheel composed of precipitated artificial diamond grains.
従来、一般に、超硬合金やその他のサーメツ
ト、さらにセラミツクスやガラスなどの研削・研
磨にはダイヤモンド研磨砥石が用いられている。 Conventionally, diamond polishing wheels have been generally used for grinding and polishing cemented carbide, other cermets, ceramics, glass, and the like.
この従来ダイヤモンド研磨砥石は、例えばAl
やAl合金の基体の研磨作用面に、結合剤として、
レジン脂肪や、CuまたはNiなどの金属を用いて、
天然ダイヤモンド粒、あるいは超高圧高温合成に
よつて製造された人工ダイヤモンド粒を分散結合
させた構造をもつものである。 This conventional diamond polishing wheel is made of aluminum, for example.
As a bonding agent,
Using resin fat and metals such as Cu or Ni,
It has a structure in which natural diamond grains or artificial diamond grains manufactured by ultra-high pressure and high temperature synthesis are dispersed and bonded.
したがつて、上記の従来ダイヤモンド砥石にお
いては、天然ダイヤモンド粒や人工ダイヤモンド
粒が高価であるばかりでなく、研磨面に影響を及
ぼすダイヤモンド粒をできるだけ狭い範囲の粒度
分布に収めなければならないため、著しく長時間
の分級工程を必要とすることから、その製造コス
トは高くならざるを得ないものであつた。 Therefore, in the above-mentioned conventional diamond grinding wheels, not only are natural diamond grains and artificial diamond grains expensive, but the diamond grains that affect the polished surface must be kept within a particle size distribution as narrow as possible. Since a long classification process is required, the manufacturing cost is inevitably high.
そこで、本発明者等は、上述のような観点から
狭い範囲内の粒度分布をもつたダイヤモンド粒で
構成されたダイヤモンド研磨砥石を製造コスト安
く製造すべく研究を行なつた結果、まず、炭化タ
ングステン（WC）基サーメツト、炭化チタン
（TiC）基サーメツト、窒化チタン（TiN）基サ
ーメツト、および炭窒化チタン（TiCN）基サー
メツトなどのサーメツトで製造された基体の研磨
作用面を、酸あるいは電解などによりエツチング
処理して腐食し、このように腐食により粗面化し
た研磨作用面の主として粗面凸部に、Ｗ、Mo、
およびNb、並びにその合金のうちいずれかから
なる反応層を、通常の化学蒸着法または物理蒸着
法によつて被覆し、この場合前記反応層によつて
前記エツチング処理面が平滑化しないようにかつ
主として研磨作用面の主として粗面凸部に反応層
が形成されるように、その被覆厚さをできるだけ
薄く被覆し、この状態で、これを通常の人工ダイ
ヤモンド析出生成法、すなわち、反応混合ガスを
加熱し、活性化する手段として、
(a) 例えば特開昭58−91100号公報に記載される
ような熱電子放射材を用いる方法、
(b) 例えば特開昭58−135117号公報に記載される
ような高周波によるプラズマ放電を利用する方
法、
(c) 例えば特開昭58−110494号公報に記載される
ようなマイクロ波によるプラズマ放電を利用す
る方法
以上(a)〜(c)のいずれかの方法によつて処理する
と、基体粗面凸部に形成された前記反応層に主と
して人工ダイヤモンド粒が析出生成するようにな
り、この結果、粒度分布がきわめて狭い範囲内に
ある粒のそろつた人工ダイヤモンド粒が前記反応
層表面に主として密着し、粗面凹部には人工ダイ
ヤモンド粒の析出生成はなく、あつても極めて少
ないところから、基体表面に人工ダイヤモンド粒
が析出生成している部分と析出生成していない部
分が形成され、析出生成していない部分は溝とな
つて、これを研磨砥石として使用した場合すぐれ
た砥石性能を発揮するようになり、さらにこの表
面にNiなどの金属表面層を、通常の化学蒸着法
または物理蒸着法にて蒸着形成したり、あるいは
電解メツキ法または無電解メツキ法によりメツキ
形成した場合には、前記析出生成人工ダイヤモン
ド粒の密着性が一段と向上するようになり、しか
もこのダイヤモンド研磨砥石の製造コストは著し
く安価であるという知見を得たのである。 Therefore, from the above-mentioned viewpoint, the present inventors conducted research in order to manufacture a diamond polishing wheel composed of diamond grains with a narrow particle size distribution at a low manufacturing cost. Polishing surfaces of substrates made of cermets such as (WC)-based cermets, titanium carbide (TiC)-based cermets, titanium nitride (TiN)-based cermets, and titanium carbonitride (TiCN)-based cermets are polished using acid or electrolysis. W, Mo,
A reaction layer made of Nb, Nb, or an alloy thereof is coated by a conventional chemical vapor deposition method or a physical vapor deposition method, and in this case, the etching surface is not smoothed by the reaction layer. The coating is made as thin as possible so that a reaction layer is formed mainly on the rough convex portions of the polishing surface, and in this state, it is subjected to the usual artificial diamond precipitation method, that is, using a reaction mixture gas. As means for heating and activating, (a) a method using a thermionic emitting material as described in, for example, JP-A No. 58-91100; (b) a method using a thermionic emitting material as described in, for example, JP-A-58-135117; (c) A method using plasma discharge caused by microwaves as described in JP-A-58-110494, for example, any of the above (a) to (c). When treated by the method described above, artificial diamond grains mainly precipitate and form in the reaction layer formed on the convex portions of the rough surface of the substrate. The diamond grains mainly adhere to the surface of the reaction layer, and there is no precipitation of artificial diamond grains in the rough surface concavities, and there are very few artificial diamond grains deposited on the surface of the substrate and precipitation formation. The areas where no precipitation is formed become grooves, and when used as a polishing wheel, it exhibits excellent grinding performance.Furthermore, this surface is coated with a metal surface layer such as Ni. When plating is performed by a normal chemical vapor deposition method or physical vapor deposition method, or by an electrolytic plating method or an electroless plating method, the adhesion of the precipitated artificial diamond particles is further improved. Moreover, they discovered that the manufacturing cost of this diamond polishing wheel is extremely low.
この発明は、上記知見にもとづいてなされたも
のであつて、
(1) 組織的に硬質分散相と人工ダイヤモンドが析
出しにくい金属結合相からなるサーメツト基体
の研磨作用面に、電解エツチングを施し、前記
研磨作用面表面部の金属結合相を除去して、こ
れを粗面化し、
ついで、化学蒸着処理または物理蒸着処理に
より上記研磨作用面の主として粗面凸部に、
Ｗ、Mo、およびNb、並びにその合金のうちの
いずれかからなる反応金属を蒸着させ、
引続いて、気相合成法により上記反応金属上
に人工ダイヤモンドを析出生成せしめる、
研磨作用面に人工ダイヤモンドを部分的に分散
せしめたダイヤモンド研磨砥石の製造法。 The present invention has been made based on the above findings, and includes the following: (1) electrolytically etching the polishing surface of a cermet substrate consisting of a hard dispersed phase and a metal bonding phase in which artificial diamond is difficult to precipitate; The metal bonding phase on the surface of the polishing surface is removed to roughen the surface, and then the roughened convex portions of the polishing surface are mainly coated with chemical vapor deposition or physical vapor deposition.
A reactive metal consisting of W, Mo, Nb, or an alloy thereof is vapor-deposited, and artificial diamond is then precipitated and formed on the reactive metal by a vapor phase synthesis method. A manufacturing method for a diamond polishing wheel that partially disperses.
(2) 組織的に硬質分散相と人工ダイヤモンドが析
出しにくい金属結合相からなるサーメツト基体
の研磨作用面に、電解エツチングを施し、前記
研磨作用面表面部の金属結合相を除去して、こ
れを粗面化し、
ついで、化学蒸着処理または物理蒸着処理に
より上記研磨作用面の主として粗面凸部に、
Ｗ、Mo、およびNb、並びにその合金のうちい
ずれかからなる反応金属を蒸着させ、
引続いて、気相合成法により上記反応金属上
に人工ダイヤモンドを析出せしめ、
さらにその上に、Niを蒸着またはメツキす
る、研磨作用面に人工ダイヤモンドを部分的に
分散せしめたダイヤモンド研磨砥石の製造法。(2) Electrolytic etching is applied to the polishing surface of the cermet substrate, which consists of a hard dispersed phase and a metal binder phase in which artificial diamond is difficult to precipitate, to remove the metal binder phase on the surface of the polishing surface. Then, by chemical vapor deposition treatment or physical vapor deposition treatment, mainly the roughened convex portions of the polishing surface are roughened.
A reactive metal consisting of W, Mo, Nb, or an alloy thereof is deposited, and then artificial diamond is deposited on the reactive metal by vapor phase synthesis, and Ni is further deposited on top of it. A method for manufacturing a diamond polishing wheel in which artificial diamonds are partially dispersed on the polishing surface.
に特徴を有するものである。It has the following characteristics.
前記エツチング処理により腐食して粗面化した
基体の主として粗面凸部の表面に、Ｗ、Mo、及
びNb、並びにその合金のうちのいずれかからな
る反応層を形成した理由は次の通りである。 The reason why a reaction layer consisting of W, Mo, Nb, or any of their alloys was formed mainly on the surface of the roughened convex portions of the substrate that had been corroded and roughened by the etching treatment was as follows. be.
一般にＷ、Mo、及びNb、並びにその合金は、
人工ダイヤモンドが析出生成しやすい金属として
知られているが、前記Ｗ、Mo、およびNb、並び
にその合金の均一平滑な面に人工ダイヤモンドを
析出生成せしめると、狭い範囲の粒度分布をもつ
た人工ダイヤモンド粒（粒のそろつた人工ダイヤ
モンド粒）が均一かつ緻密に析出生成する。とこ
ろが表面に均一かつ緻密に析出生成した人工ダイ
ヤモンド粒が密着している研磨作用面を有する人
工ダイヤモンド研磨砥石を用いて研磨すると、人
工ダイヤモンド粒が緻密に析出生成しているため
に人工ダイヤモンド粒の目づまりを起こし、研磨
性能が低下する。 In general, W, Mo, and Nb, and their alloys are
Artificial diamond is known to be a metal that tends to precipitate and form, but when artificial diamond is precipitated and formed on the uniform and smooth surface of the W, Mo, Nb, and their alloys, artificial diamond with a narrow particle size distribution can be formed. Grains (artificial diamond grains with uniform grains) are precipitated uniformly and densely. However, when polishing is performed using an artificial diamond polishing wheel that has a polishing surface in which artificial diamond grains are uniformly and densely deposited on the surface, the artificial diamond grains are deposited in a dense manner and the artificial diamond grains are This will cause clogging and reduce polishing performance.
そこで、前記Ｗ、Mo、およびNb、並びにその
合金のうちのいずれかからなる反応層を粗面化し
た基体表面にできるだけ薄く被覆することによ
り、前記基体表面の主として粗面凸部に反応層を
形成し、前記反応層に人工ダイヤモンド粒を析出
生成せしめると、人工ダイヤモンド粒は前記Ｗ、
MoおよびNb、並びにその合金のうちのいずれか
からなる反応層に析出生成し、そのため前記基体
の方面に前記人工ダイヤモンドが分散して析出生
成し密着する。このような人工ダイヤモンド粒が
分散して密着した構造を有する人工ダイヤモンド
研磨砥石を用いて研磨すると目づまりを起こすこ
となく、従来のダイヤモンド研磨砥石と同等の性
能を付与することができたのである。 Therefore, by coating the roughened substrate surface with a reaction layer made of any of W, Mo, Nb, and their alloys as thinly as possible, the reaction layer is applied mainly to the roughened convex portions of the substrate surface. When artificial diamond grains are formed and precipitated and generated in the reaction layer, the artificial diamond grains are formed by the W,
The artificial diamond is precipitated and formed in a reaction layer made of Mo, Nb, or an alloy thereof, and therefore, the artificial diamond is dispersed, precipitated, and adhered to the substrate. When polished using an artificial diamond polishing wheel with a structure in which artificial diamond grains are dispersed and adhered to each other, it was possible to provide the same performance as a conventional diamond polishing wheel without causing clogging.
基体となるサーメツトは、一般に人工ダイヤモ
ンド粒が析出生成しにくいCo、Ni、Feなどの金
属をバインダーとして使用しているために、前記
基体の表面をエツチング処理により腐食し、基体
表面のバインダーを除去して粗面を形成しても、
基体表面の粗面凹部には依然として前記Co、Ni、
Feなどの金属が露出しており、したがつて粗面
凹部には人工ダイヤモンド粒は析出生成せず、粗
面凸部に形成された主として反応層に人工ダイヤ
モンド粒が析出生成し、また前記反応層は、金属
または合金であるところから、基体に強固に密着
し、人工ダイヤモンド粒を基体に直接析出生成さ
せるよりも基体に対する密着強度の優れた人工ダ
イヤモンドを形成することもできる。 Since the cermet that serves as the base generally uses metals such as Co, Ni, and Fe as binders, which are difficult for artificial diamond grains to precipitate and form, the surface of the base is corroded by etching treatment, and the binder on the base surface is removed. Even if a rough surface is formed by
The above-mentioned Co, Ni,
Metals such as Fe are exposed, and therefore, artificial diamond particles do not precipitate and form in the concave portions of the rough surface, but artificial diamond particles precipitate and form mainly in the reaction layer formed in the convex portions of the rough surface, and the Since the layer is made of a metal or an alloy, it firmly adheres to the substrate, and it is also possible to form an artificial diamond that has better adhesion strength to the substrate than when artificial diamond grains are deposited directly onto the substrate.
つぎに、この発明のダイヤモンド研磨砥石を実
施例により具体的に説明する。 Next, the diamond polishing grindstone of the present invention will be specifically explained with reference to Examples.
実施例 １
基体として、重量％で、TiN：３％、TiC：３
％、TaC：３％、Co：８％、WC：残りからなる
組成を有し、かつ研磨作用面の寸法が外径：70mm
φ×内径：50mmφの超硬合金（サーメツト）製カ
ツプ状砥石本体を用意し、まず、この砥石本体の
研磨作用面に、エツチング液として10％NaOH
水溶液を用い、6Vの電圧をかけて90秒間の電解
エツチング処理を施すことによつて、その研磨作
用面を5Sの表面粗とした後、通常の化学蒸着装
置に装入し、
反応ガス組成：モル％で、WF6：４％、
CH3OH：15％、H2：35％、Ar：残り、
反応ガス流量：２／min、
砥石本体加熱温度：100℃、
反応時間：20分、
の条件で化学蒸着処理を施すことによつて、前記
砥石本体の粗面化した研磨作用面の主として粗面
凸部に、平均層厚：1.2μｍのＷ反応層を被覆形成
し、引続いて、この化学蒸着処理後の砥石本体
を、反応混合ガスを加熱し、活性化する手段とし
て、例えば金属タングステン製フイラメントの熱
電子放射材を用いる、特開昭58−91100号公報に
記載されるような人工ダイヤモンド析出生成装置
に装入し、
反応容器：外径120mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2＝
１／100、
熱電子放射材と砥石本体の研磨作用面との距
離：15mm、
反応容器内雰囲気圧力：10torr、
熱電子放射材の加熱温度：2200℃、
熱電子放射材による上記研磨作用面の加熱温
度：750℃、
反応処理時間：20時間、
の条件で処理することによつて、上記砥石本体の
研磨作用面における反応層上に、平均粒径：4μ
ｍを有する人工ダイヤモンド粒を60％の分布面積
割合で析出生成せしめた。Example 1 As a substrate, TiN: 3%, TiC: 3% by weight
%, TaC: 3%, Co: 8%, WC: remainder, and the dimensions of the polishing surface are outer diameter: 70 mm.
Prepare a cup-shaped grindstone body made of cemented carbide (cermet) with diameter x inner diameter of 50 mm, and first apply 10% NaOH as an etching liquid to the polishing surface of the grindstone body.
Using an aqueous solution, the polishing surface was roughened to 5S by applying an electrolytic etching process for 90 seconds at a voltage of 6V, and then loaded into a normal chemical vapor deposition apparatus.Reactant gas composition: In mole%, WF 6 : 4%,
CH 3 OH: 15%, H 2 : 35%, Ar: remainder, reaction gas flow rate: 2/min, grinding wheel body heating temperature: 100℃, reaction time: 20 minutes. Then, a W reaction layer with an average layer thickness of 1.2 μm was formed to cover mainly the rough convex portions of the roughened polishing working surface of the grinding wheel body, and subsequently, the grinding wheel body after the chemical vapor deposition treatment was As a means for heating and activating the reaction mixture gas, it is charged into an artificial diamond precipitation generating apparatus as described in Japanese Patent Application Laid-Open No. 58-91100, which uses a thermionic emitting material such as a filament made of metallic tungsten, for example, and Reaction vessel: quartz tube with outer diameter of 120 mmφ Reaction mixture gas composition: Volume ratio, CH 4 /H 2 =
1/100, Distance between the thermionic emissive material and the polishing surface of the grinding wheel body: 15 mm, Atmospheric pressure in the reaction vessel: 10 torr, Heating temperature of the thermionic emissive material: 2200℃, The above polishing surface by the thermionic emissive material Heating temperature: 750℃, reaction treatment time: 20 hours By processing under the following conditions, an average particle size of 4μ is formed on the reaction layer on the polishing surface of the grindstone body.
Artificial diamond grains having m were precipitated with a distribution area ratio of 60%.
つぎに、この結果得られた本発明ダイヤモンド
研磨砥石、さらにその表面に通常の条件にて平均
層厚：2μｍのNiを電気メツキして金属表面層を
形成した本発明表面被覆ダイヤモンド研磨砥石を
用い、研磨面が270＃
に調整され、かつ平面10mm
□
×厚さ５mmの寸法を有する窒化けい素基セラミ
ツクス試片の前記研磨面を研磨して、0.2Sに仕上
げるのに要した時間を測定したところ、いずれも
35秒を要し、この所用時間は、レジン樹脂ポンド
の同種の従来ダイヤモンド研磨砥石と同等のもの
であつた。 Next, the resulting diamond polishing wheel of the present invention was used, and furthermore, a surface-coated diamond polishing wheel of the present invention was used, in which a metal surface layer was formed by electroplating Ni with an average thickness of 2 μm on the surface under normal conditions. , the polished surface is adjusted to 270#, and the flat surface is 10mm
□ When we measured the time required to polish the polished surface of a silicon nitride-based ceramic specimen with a thickness of 5 mm and finish it to 0.2S, both
It took 35 seconds, and this time was equivalent to that of a conventional diamond polishing whetstone of the same type with a resin pound.
実施例 ２
実施例１で作製したエツチング処理により粗面
化した基体を通常のスパツタリング装置に装入
し、
反応容器内の真空度：２×10-3torr、
雰囲気：Ar、
反応容器の上部に配置されたMoまたはNbのタ
ーゲツトに印加される電圧：−1500V、
反応容器の下部に４回転／分の速度で回転させ
ながら立置き配置された砥石本体への印加電圧：
−200V、
反応時間：２時間、
の条件で物理蒸着処理を施すことによつて、前記
砥石本体の研磨作用面（外周面）の主として粗面
凸部に、平均層厚：0.8μｍのMoまたはNbの反応
層を形成し、引続いて、この反応層形成後の砥石
本体を、反応混合ガスを加熱し、活性化する手段
として、マイクロ波によるプラズマ放電を利用す
る、特開昭58−110494号公報に記載されるような
人工ダイヤモンド析出生成装置に装入し、
反応容器：直径120mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2／
Ar＝１／100／10、
反応容器内の雰囲気圧力：0.8torr、
マイクロ波：2.45GHz、
砥石本体の加熱温度：700℃、
反応処理時間：８時間、
の条件で処理することにより、上記砥石本体の研
磨作用面における上記MoまたはNbからなる反応
層上に、平均粒径：2μｍの人工ダイヤモンドを、
50％の分布面積割合で析出生成させた。Example 2 The substrate whose surface had been roughened by the etching process prepared in Example 1 was loaded into a normal sputtering device, and the vacuum level in the reaction vessel: 2 × 10 -3 torr, the atmosphere: Ar, and the upper part of the reaction vessel Voltage applied to the placed Mo or Nb target: -1500V, voltage applied to the grindstone body placed vertically at the bottom of the reaction vessel while rotating at a speed of 4 revolutions/min:
-200V, reaction time: 2 hours, by performing physical vapor deposition treatment under the following conditions, Mo or Mo with an average layer thickness of 0.8 μm is applied mainly to the rough convex portions of the polishing surface (outer peripheral surface) of the grindstone body. JP-A No. 58-110494, which utilizes microwave plasma discharge as a means of forming a Nb reaction layer and then heating the reaction mixture gas and activating the grinding wheel body after the reaction layer has been formed. Charged into an artificial diamond precipitation generator as described in the publication, reaction vessel: quartz tube with a diameter of 120 mmφ, reaction mixture gas composition: CH 4 /H 2 / by volume ratio.
The above grinding wheel On the reaction layer made of Mo or Nb on the polishing surface of the main body, artificial diamonds with an average particle size of 2 μm are placed.
Precipitation was generated at a distribution area ratio of 50%.
つぎに、この結果得られた反応層がそれぞれ
MoまたはNbで形成された本発明ダイヤモンド研
磨砥石、さらにその表面に、通常のスパツタリン
グ法を用い、
反応容器内真空度：２×10-3torr、
雰囲気：Ar、
Cuターゲツトへの印加電圧：−1000V、
砥石（４回転／分で回転）への印加電圧：−
1000V、
反応時間：30分、
の条件で平均層厚：2μｍのNiからなる金属表面
層を蒸着させた本発明表面被覆ダイヤモンド研磨
砥石について、Co：12重量％、WC：残りからな
る組成を有し、かつプロフアイル加工により半
径：4.8mmの凹みを形成してある超硬合金素材の
前記凹みを仕上げ研磨したところ120秒を要した。
この所用時間はレジンボンドの同種の従来ダイヤ
モンドの研磨砥石と同等のものであつた。 Next, each of the resulting reaction layers is
The diamond polishing wheel of the present invention made of Mo or Nb was further coated on its surface by a normal sputtering method, vacuum inside the reaction vessel: 2 x 10 -3 torr, atmosphere: Ar, voltage applied to the Cu target: - 1000V, voltage applied to the grindstone (rotating at 4 revolutions/minute): -
The surface-coated diamond polishing wheel of the present invention was coated with a metal surface layer of Ni with an average layer thickness of 2 μm under the conditions of 1000 V, reaction time: 30 minutes, and had a composition consisting of 12% by weight of Co and the remainder of WC. Then, when a recess with a radius of 4.8 mm was formed in the cemented carbide material by profile processing, it took 120 seconds to final polish the recess.
This required time was equivalent to that of a conventional diamond polishing whetstone of the same type with resin bond.
上述のように、この発明の製造法により作製さ
れたダイヤモンド研磨砥石は、これを構成するダ
イヤモンド粒が強固な密着力で結合し、かつその
粒度も、きわめて狭い範囲内に分布しているの
で、すぐれた研磨性能を著しく長期に亘つて発揮
し、さらにダイヤモンド粒を通常の人工ダイヤモ
ンド析出生成法によつて形成することができるの
で、整粒の人工ダイヤモンド粒が形成されること
と相まつて製造コストが安いなど工業上有用な特
性を有するのである。 As mentioned above, the diamond abrasive wheel produced by the manufacturing method of the present invention has diamond grains that are bonded together with strong adhesion, and the grain sizes are distributed within an extremely narrow range. It exhibits excellent polishing performance over an extremely long period of time, and since the diamond grains can be formed using the normal artificial diamond precipitation method, manufacturing costs are reduced as well as the formation of well-sized artificial diamond grains. It has industrially useful properties such as low cost.
Claims (1)
出しにくい金属結合相からなるサーメツト基体の
研磨作用面に、電解エツチングを施し、前記研磨
作用面表面部の金属結合相を除去して、これを粗
面化し、 ついで、化学蒸着処理または物理蒸着処理によ
り上記研磨作用面の主として粗面凸部に、Ｗ、
Mo、およびNb、並びにその合金のうちのいずれ
かからなる反応金属を蒸着させ、 引続いて、気相合成法により上記反応金属上に
人工ダイヤモンドを析出生成せしめること、 を特徴とする研磨作用面に人工ダイヤモンドを部
分的に分散せしめたダイヤモンド研磨砥石の製造
法。 ２ 組織的に硬質分散相と人工ダイヤモンドが析
出しにくい金属結合相からなるサーメツト基体の
研磨作用面に、電解エツチングを施し、前記研磨
作用面表面部の金属結合相を除去して、これを粗
面化し、 ついで、化学蒸着処理または物理蒸着処理によ
り上記研磨作用面の主として粗面凸部に、Ｗ、
Mo、およびNb、並びにその合金のうちいずれか
からなる反応金属を蒸着させ、 引続いて、気相合成法により上記反応金属上に
人工ダイヤモンドを析出生成せしめ、 さらにその上に、Niを蒸着またはメツキする
こと、 を特徴とする研磨作用面に人工ダイヤモンドを部
分的に分散せしめたダイヤモンド研磨砥石の製造
法。[Scope of Claims] 1 Electrolytic etching is applied to the polishing surface of a cermet substrate, which is composed of a hard dispersed phase and a metal binder phase in which artificial diamond is difficult to precipitate, and the metal binder phase on the surface of the polishing surface is removed. This is then roughened, and then W, W,
A polishing surface characterized by: depositing a reactive metal consisting of any one of Mo, Nb, and alloys thereof, and then precipitating and producing artificial diamond on the reactive metal by vapor phase synthesis. A method for manufacturing a diamond polishing wheel in which artificial diamonds are partially dispersed. 2 Electrolytic etching is applied to the polishing surface of the cermet substrate, which is composed of a hard dispersed phase and a metal binder phase in which artificial diamond is difficult to precipitate, to remove the metal binder phase on the surface of the polishing surface and roughen it. Then, by chemical vapor deposition treatment or physical vapor deposition treatment, W, W,
A reactive metal consisting of Mo, Nb, or an alloy thereof is deposited, and then artificial diamond is deposited on the reactive metal using a vapor phase synthesis method, and then Ni is deposited or A method for manufacturing a diamond polishing wheel in which artificial diamonds are partially dispersed on the polishing surface, characterized by plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6034884A JPS60201877A (en) | 1984-03-28 | 1984-03-28 | Diamond grinding wheel composed of deposited artificial diamond particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6034884A JPS60201877A (en) | 1984-03-28 | 1984-03-28 | Diamond grinding wheel composed of deposited artificial diamond particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201877A JPS60201877A (en) | 1985-10-12 |
| JPH0474145B2 true JPH0474145B2 (en) | 1992-11-25 |
Family
ID=13139564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6034884A Granted JPS60201877A (en) | 1984-03-28 | 1984-03-28 | Diamond grinding wheel composed of deposited artificial diamond particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60201877A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60255366A (en) * | 1984-05-29 | 1985-12-17 | Sumitomo Electric Ind Ltd | Preparation of diamond grinding paper |
| JPH03251370A (en) * | 1990-03-01 | 1991-11-08 | Mitsubishi Materials Corp | Diamond grindstone for superfine grinding and manufacture thereof |
| JPH04141372A (en) * | 1990-09-28 | 1992-05-14 | Mitsubishi Materials Corp | Diamond grinding wheel |
| JPH0736398B2 (en) * | 1991-05-24 | 1995-04-19 | 九州電子金属株式会社 | Oblique polishing method for semiconductor samples |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855562A (en) * | 1981-09-28 | 1983-04-01 | Hitachi Ltd | Polishing dish and manufacture thereof |
| JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Preparation of diamond |
| JPS6086096A (en) * | 1983-10-18 | 1985-05-15 | Natl Inst For Res In Inorg Mater | Precipitation of filmy diamond |
-
1984
- 1984-03-28 JP JP6034884A patent/JPS60201877A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855562A (en) * | 1981-09-28 | 1983-04-01 | Hitachi Ltd | Polishing dish and manufacture thereof |
| JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Preparation of diamond |
| JPS6086096A (en) * | 1983-10-18 | 1985-05-15 | Natl Inst For Res In Inorg Mater | Precipitation of filmy diamond |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60201877A (en) | 1985-10-12 |
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