JPH04141372A - Diamond grinding wheel - Google Patents
Diamond grinding wheelInfo
- Publication number
- JPH04141372A JPH04141372A JP25959290A JP25959290A JPH04141372A JP H04141372 A JPH04141372 A JP H04141372A JP 25959290 A JP25959290 A JP 25959290A JP 25959290 A JP25959290 A JP 25959290A JP H04141372 A JPH04141372 A JP H04141372A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- diamond
- grinding wheel
- diamond film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 69
- 239000010432 diamond Substances 0.000 title claims abstract description 65
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 65
- 239000012808 vapor phase Substances 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 239000002131 composite material Substances 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001308 synthesis method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- DVARTQFDIMZBAA-UHFFFAOYSA-O ammonium nitrate Chemical compound [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、砥石基体の表面に気相合成法によりダイヤ
モンド膜（以下、気相合成ダイヤモンド膜という）を形
成してなるダイヤモンド砥石に関するものであり、例え
ばストレートホイールカップホイール、ホーニングスト
ーン、ペンシルエツジホイール、ディスクホイール、カ
ーブジェネレーターの研削面に気相合成ダイヤモンド膜
を形成したダイヤモンドホイールに関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a diamond whetstone in which a diamond film (hereinafter referred to as a vapor-phase synthesized diamond film) is formed on the surface of a whetstone base by a vapor phase synthesis method. For example, it relates to diamond wheels in which a vapor-phase synthetic diamond film is formed on the grinding surface of straight wheel cup wheels, honing stones, pencil edge wheels, disc wheels, and curve generators.
一般に、砥石基体表面に気相合成法により人工ダイヤモ
ンド膜を析出生成させたダイヤモンド砥石（以下、これ
をダイヤモンド砥石という）は知られており、このダイ
ヤモンド砥石は、ガラス、グラファイト、セラミックス
などの表面研削に使用されている。Diamond grinding wheels (hereinafter referred to as diamond grinding wheels) are generally known, in which an artificial diamond film is precipitated and formed on the surface of the grinding wheel base using a vapor phase synthesis method. used in
しかし、従来の砥石基体表面に気相合成ダイヤモンド膜
を形成してなるダイヤモンド砥石は、上記気相合成ダイ
ヤモンド膜自体の表面粗さが小さいために、研削開始後
、短時間のうぢに微細な研削屑粉が気相合成ダイヤモン
ド膜に目づまりを起し、研削能率が激減するという課題
があった。However, in conventional diamond grinding wheels, which are made by forming a vapor-phase synthetic diamond film on the surface of the grinding wheel base, because the surface roughness of the vapor-phase synthetic diamond film itself is small, after the start of grinding, the diamond grinding wheel has very fine grains for a short period of time. The problem was that grinding debris clogged the vapor-phase synthetic diamond film, drastically reducing grinding efficiency.
そこで、本発明者等は、研削能率を低下させることのな
い気相合成ダイヤモンド膜を有するダイヤモンド砥石を
製造すべく研究を行った結果、砥石基体表面に規則的に
交叉する複数本の溝を形成することにより凹凸面を形成
し、上記凹凸面の少なくとも凸部分に気相合成ダイヤモ
ンド膜を形成して得られたダイヤモンド砥石は、研削屑
粉が上記溝を通して排出されるため目づまりを起すこと
がなく、したがって研削能率が長時間にわたって低下す
ることがないという知見を得たのである。Therefore, the present inventors conducted research to manufacture a diamond grinding wheel with a vapor-phase synthetic diamond film that does not reduce grinding efficiency, and as a result, they formed a plurality of regularly intersecting grooves on the surface of the grinding wheel base. A diamond grinding wheel obtained by forming an uneven surface and forming a vapor-phase synthetic diamond film on at least the convex portions of the uneven surface does not cause clogging because grinding dust is discharged through the grooves. Therefore, it was found that the grinding efficiency does not decrease over a long period of time.
この発明は、かかる知見にもとづいてなされたものであ
って、
砥石基体の表面に規則的に交叉する複数本の溝によって
形成された凹凸研削面の少なくとも凸部分に気相合成ダ
イヤモンド膜を形成してなるダイヤモンド砥石に特徴を
有するものである。This invention was made based on this knowledge, and includes forming a vapor-phase synthetic diamond film on at least the convex portions of the uneven grinding surface formed by a plurality of regularly intersecting grooves on the surface of the grinding wheel base. This is a unique feature of a diamond whetstone.
」上記溝は、その断面形状はいかなる形状のものでもよ
く、砥石基体表面に形成される溝模様もいかなるもので
もよい。基体表面に溝が存在することか必要なのである
。The grooves may have any cross-sectional shape, and any groove pattern may be formed on the surface of the grindstone base. It is necessary that grooves exist on the surface of the substrate.
上記人工気相ダイヤモンド砥石を作製するための砥石基
体の材料は、人工気相合成法によりダイヤモンドｊ摸が
析出生成されるならば、いかなる何科を用いてもよい。The material of the grinding wheel base for producing the artificial vapor phase diamond grinding wheel may be any material as long as diamond grains can be precipitated and produced by the artificial vapor phase synthesis method.
この発明のダイヤモンド砥石およびその製造法を図面を
用いて−）Ｎ具体的に説明する。The diamond grindstone of the present invention and its manufacturing method will be specifically explained with reference to the drawings.
第１図は、鏡面研磨された砥石基体表面に交叉するＵ字
溝を形成したこの発明のダイヤモンド砥石の製造に用い
る砥石基体表面拡大図、第２図は、交叉するＵ字溝によ
って砥石基体表面に形成された角柱突起の平面に人工ダ
イヤモンド膜を析出生成させた状態を示す拡大斜視説明
図、である。Fig. 1 is an enlarged view of the surface of a grinding wheel base used for manufacturing the diamond grinding wheel of the present invention, in which intersecting U-shaped grooves are formed on the surface of the grinding wheel base, which has been mirror-polished. FIG. 2 is an enlarged perspective explanatory view showing a state in which an artificial diamond film is deposited and generated on a plane of a prismatic protrusion formed in the prismatic projection.
第１図に示されるように、通常のフォトエツチング法に
より鏡面研磨した砥石基体１の表面２にＵ字溝３を交叉
するように形成すると、第２図に示されるようにＵ字溝
３で囲まれた多数の角柱突起４が形成される。このよう
な角柱突起４を有する基体１に通常の気体合成法により
人工ダイヤモンド膜５を析出生成せしめると、角柱突起
４の少なくとも表面に人工ダイヤモンド膜５が形成され
る。As shown in FIG. 1, when U-shaped grooves 3 are formed so as to intersect with each other on the surface 2 of the grinding wheel base 1 which has been mirror-polished by a normal photoetching method, the U-shaped grooves 3 are formed as shown in FIG. A large number of surrounded prismatic projections 4 are formed. When the artificial diamond film 5 is deposited on the substrate 1 having such a prismatic projection 4 by a normal gas synthesis method, the artificial diamond film 5 is formed on at least the surface of the prismatic projection 4.
第２図では、角柱突起４の表面のみに人工ダイヤモンド
膜５が形成されているか、」二層人工ダイヤモンド膜５
は上記角柱突起４の表面たけてなく、Ｕ字溝３の中に形
成されてもよい。In FIG. 2, whether the artificial diamond film 5 is formed only on the surface of the prismatic protrusion 4 or not, the two-layer artificial diamond film 5
may be formed in the U-shaped groove 3 instead of extending over the surface of the prismatic protrusion 4 .
このようにＵ字溝３を有する第２図に示されるような人
工気相ダイヤモンド砥石を用いて研削を行った場合、研
削屑粉は上記Ｕ字溝３を通して排出されるので、いつま
でも研削能率は低下しない。When grinding is performed using an artificial vapor phase diamond grinding wheel as shown in FIG. 2 having the U-shaped groove 3, the grinding dust is discharged through the U-shaped groove 3, so the grinding efficiency remains constant. Does not decrease.
先にも述べたように、砥石基体の材料は、Ｍｏ。As mentioned earlier, the material of the whetstone base is Mo.
Ｗ、超硬合金、ＳｉＯＳｉＣ，Ｓｉ
２′
８１３Ｎ４．ＡΩＮ、サイアロンなどを用いることか可
能である。W, cemented carbide, SiOSiC, Si 2' 813N4. It is possible to use AΩN, Sialon, etc.
」ニ記砥石基体の研削面に溝を形成する方法としては、
レーザーによる加工法、放電加工法、印刷プリント後の
エツチングによる方法、ストレートホイール等の砥石に
よる加工法、半導体用フォトリゾグラフィー法等か知ら
れており、その砥石基体の材質、溝幅なとにより、任意
に選定することができる。” The method for forming grooves on the grinding surface of the whetstone base is as follows:
Processing methods using lasers, electrical discharge machining, etching after printing, processing using grindstones such as straight wheels, photolithography for semiconductors, etc. are known, and depending on the material of the grindstone base, groove width, etc. , can be arbitrarily selected.
一例として半導体用フ第１・リゾグラフィー法により溝
加］二を行う方法を説明する。As an example, a method for forming grooves using a lithography method for semiconductors will be described.
第３図には、通常のフォトエツチング法により砥石基体
表面に交叉するＵ字溝および角柱突起を有する砥石基体
を作製する工程が記載されている。FIG. 3 shows the process of producing a grindstone base having a U-shaped groove and a prismatic protrusion intersecting the surface of the grindstone base by a normal photoetching method.
第３図の（ａ）工程に示されるように、表面を鏡面研磨
した砥石基体１の表面に、フォトレジスト６を塗布する
。フォトレジスト６にはポジ型フォトレジストおよびネ
ガ型フォトレジストがあり、第３図（ａ）工程では露光
部分のフ第１・レジストが残存するネガ型フォトレジス
トを使用したものが記載されている。このフオトレジス
Ｉ−６を塗布した砥石基体１の」二に、 （ｂ）工程で
示されるように、不透明部分９を有するフォトマスク７
を重ね合せ、上から紫外線８を当てることによりフォト
レジスト６を感光させる。As shown in step (a) of FIG. 3, a photoresist 6 is applied to the surface of the grindstone base 1 whose surface has been mirror-polished. The photoresist 6 includes a positive type photoresist and a negative type photoresist, and the process shown in FIG. 3A uses a negative type photoresist in which the first resist remains in the exposed portion. As shown in step (b), a photomask 7 having an opaque portion 9 is applied to the second part of the grinding wheel base 1 coated with this photoresist I-6.
The photoresist 6 is exposed by overlapping them and applying ultraviolet rays 8 from above.
この感光したフォトレジスト６を現像すると（Ｃ）工程
に示される如く未感光のフォトレジスト部分のみが除去
され、感光したフォトレジスト部分は基板１上に残存す
る。この残存したフォトレジスト６を有する砥石基体１
をエツチングすると（ｄ）工程に示される如くフ第１・
レジスト膜のない部分のみかエツチングされてＵ字溝３
が形成され、最後に」１記残存したフ第１・レジスＩ−
６を除去することにより、この発明で使用する角柱突起
４を有する砥石基体１か作製される。When this exposed photoresist 6 is developed, only the unexposed photoresist portion is removed, and the exposed photoresist portion remains on the substrate 1, as shown in step (C). Grinding wheel base 1 with this remaining photoresist 6
As shown in step (d), the first layer is etched.
Only the part without resist film is etched to form U-shaped groove 3.
was formed, and finally the 1st Regis I-
By removing 6, the grindstone base 1 having the prismatic protrusions 4 used in the present invention is manufactured.
以上、砥石基体表面にＵ字溝を形成する方法について第
１図〜第３図を用いて説明してきたが、この発明の砥石
基体表面に形成される溝はＵ字溝に限定されるものでは
なく、いかなる断面形状の溝であってもよく、その溝の
大きさは、幅： ０．０５ｕｍ −１ｍ＋ｎ、深さ・０
１吋ｕｍ−０，５ｍｍの範囲内にあることか好ましい。The method for forming U-shaped grooves on the surface of the whetstone base has been explained above using FIGS. 1 to 3, but the grooves formed on the surface of the whetstone base of this invention are not limited to U-shaped grooves. The groove may have any cross-sectional shape, and the size of the groove is: Width: 0.05um -1m+n, Depth: 0
Preferably, it is within the range of 1 inch um - 0.5 mm.
さらに、第２図の角柱突起４のダイヤモンド膜が密着し
ている平面部分の表面粗さは、０．ＯＩ〜ＩＩｔｒＩｌ
であることが好ましい。Furthermore, the surface roughness of the flat portion of the prismatic protrusion 4 in FIG. 2 to which the diamond film is in close contact is 0. OI~IItrIl
It is preferable that
上記砥石基体は、全体を気相合成ダイヤモンド膜析出ｉ
＋Ｊ能な飼料で作製することもできるが、これではコス
トが高くなるので、砥石基体の主要部分はアルミニウム
、鋼などて作製し、研削面のみを気相合成ダイヤモンド
膜が析出生成しやすい飼料で複合させるとよい。The above grinding wheel base is entirely coated with a vapor-phase synthesized diamond film deposited
It is also possible to make the grinding wheel using feed that has high J-efficiency, but this increases the cost, so the main part of the grinding wheel base is made of aluminum, steel, etc., and only the grinding surface is made of feed that is likely to deposit a vapor-phase synthetic diamond film. It is better to combine them.
また、アルミニウム、鋼などて作製された砥石基体の研
削面に気相合成ダイヤモンド膜を析出生成させたチップ
を貼り付けることによりダイヤモンド砥石を作製するこ
とかできる。Further, a diamond whetstone can be manufactured by attaching a chip on which a vapor-phase synthetic diamond film is deposited to the grinding surface of a whetstone base made of aluminum, steel, or the like.
つぎに、この発明を実施例を用いて一層具体的に説明す
る。Next, the present invention will be explained in more detail using examples.
実施例 １
直径： １５０ ｍｍｓ厚さ：３ｍｍの合成石英円板を
用意し、この合成石英円板の表面をラッピングしたのち
、ポリッシングし、このポリッシングした合成石英円板
の表面をアルカリ脱脂により清浄し、水分を十分除去し
たのち、フォトレジスト液を塗布した。ここで使用した
フ第１・レジスト液はＯＦ Ｐ Ｒ−８００と称するポ
ジ型フ第１・レジスト液である。Example 1 A synthetic quartz disk with a diameter of 150 mm and a thickness of 3 mm was prepared, and the surface of this synthetic quartz disk was lapped and polished, and the surface of the polished synthetic quartz disk was cleaned by alkaline degreasing. After sufficiently removing water, a photoresist solution was applied. The first resist liquid used here is a positive type first resist liquid called OF PR-800.
上記塗布したフ第１・レジス１盲ｒｌの溶媒を、温度１
１０℃、９０秒間保持のプレベークすることにより蒸発
させ、ラップ仕上した合成石英円板の表面にフォトレジ
スト膜を形成した。The solvent of the coated film No. 1 and Regis No. 1 blind rl was heated to 1
A photoresist film was formed on the surface of a lapped synthetic quartz disk by prebaking at 10° C. for 90 seconds.
一方、格子状フォトマスクを用意し、このフォトマスク
を上記フォトレジスト膜を有する合成石英円板の上に重
ね合せ、波長：４３Ｇｎｍの水銀灯を用いて上記フォト
マスクの上から紫外線を照射し、」一層合成石英円板表
面のレジスト膜を感光させた。On the other hand, a lattice-shaped photomask is prepared, this photomask is superimposed on the synthetic quartz disk having the photoresist film, and ultraviolet rays are irradiated from above the photomask using a mercury lamp with a wavelength of 43 Gnm. The resist film on the surface of the synthetic quartz disk was then exposed to light.
この感光した合成石英円板表■】のレジスト膜を現像す
ると感光部分のフォトレジストは溶出し、フォトレジス
ト
ル状フォトレジスト膜の付着した合成石英円板をボスト
ベークすることにより現像液、リンス液を除去し、さら
に熱架橋で接着性を改善したのち、エツチング液に浸漬
してフ第１・レジスト膜のない合成石英円板部分をエツ
チングし、合成石英円板表面に格子状のＵ字溝を形成し
た。When the resist film on the exposed synthetic quartz disc surface ■ is developed, the photoresist in the exposed areas is eluted, and the synthetic quartz disc with the photoresist-like photoresist film is post-baked to remove the developer and rinse solution. After removing the resist film and improving the adhesion through thermal crosslinking, the synthetic quartz disk part without the first resist film was etched by immersing it in an etching solution to form a lattice-shaped U-shaped groove on the surface of the synthetic quartz disk. Formed.
上記エツチング条件は、次の通りである。The above etching conditions are as follows.
エツチング液：
硝酸第２セリウム・アンモニウム・１７ｇ１過塩素酸＋
５ｃｃ、
純 水： ＬＯＯｃｃ 。Etching solution: Ceric nitrate ammonium 17g 1 perchloric acid +
5cc, pure water: LOOcc.
エツチング液の温度・室温、
上記エツチング終了後、不用のフォトレジスト膜を剥離
液を用いて剥離し、表面に幅：５μｍ、深さ７１μｍの
寸法のＵ字溝および、たて：５μｍ１横５伽の寸法の平
面をもつ角柱突起を有する合成石英円板基体を作製した
。Etching solution temperature/room temperature: After the above etching is completed, the unnecessary photoresist film is peeled off using a stripping solution, and a U-shaped groove with a width of 5 μm and a depth of 71 μm is formed on the surface. A synthetic quartz disk substrate having a prismatic protrusion with a plane dimension of was fabricated.
この合成石英円板基体を、反応混合ガスを加熱し活性化
する手段として金属タングステン製フィラメントの熱電
子放射材を用いる特開昭５８９１．１００号公報に記載
されるような人工ダイヤモンド析出生成装置に装入し、
反応容器：内径：２００ｍｍφの石英管、反応混合ガス
組成： ＣＨ４／Ｈ２＝１．／１．００（容量割合）熱
電子放射材と円板状合成石英基体表面との距離：３０ｍ
ｍ。This synthetic quartz disk substrate is used in an artificial diamond precipitation generating apparatus as described in Japanese Patent Application Laid-Open No. 5891.100, which uses a thermionic emitting material of a metallic tungsten filament as a means for heating and activating the reaction mixture gas. Reaction vessel: quartz tube with inner diameter: 200 mmφ, reaction mixture gas composition: CH4/H2 = 1. /1.00 (capacity ratio) Distance between thermionic emitting material and the surface of the disk-shaped synthetic quartz substrate: 30 m
m.
反応容器内雰囲気圧力・３０Ｔｏｒｒ。Atmospheric pressure inside the reaction vessel: 30 Torr.
熱電子放射材の加熱温度： ２０００℃、熱電子放射材
による円板状合成石英基体の加熱］ ０
温度：８５０°Ｃ１
反応処理時間：３時間、
の条件で処理することにより、人工ダイヤモンド膜を上
記円板状合成石英基体上に析出生成させ、この発明の超
精密研削用ダイヤモンド砥石を作製し、このダイヤモン
ド砥石を直径：２００ｍｍのバックアップ回転テーブル
に取付けた。Heating temperature of thermionic emitting material: 2000°C, heating of disk-shaped synthetic quartz substrate by thermionic emitting material] 0 Temperature: 850°C Reaction treatment time: 3 hours By processing under the following conditions, an artificial diamond film was formed. A diamond grinding wheel for ultra-precision grinding of the present invention was produced by depositing on the disk-shaped synthetic quartz substrate, and this diamond grinding wheel was attached to a backup rotary table having a diameter of 200 mm.
一方、たて １ｃｍ、横：１ｃｍｚ厚さ：０．６ｍｍの
寸法を有し、重さ： ０．１５ｆ！：の板状のシリコン
ウェハーを用意し、この板状シリコンウェハーを、バッ
クアップ周速度：９０ｍ／ｍｉｎで回転しているバック
アップ回転テーブル上のダイヤモンド砥石に圧力・３０
０ｇ／ｃ＋＆で５分間押付けて表面研削し、上記板状シ
リコンウェハーの研削前後の重さを測定して研削量を求
め、それらの結果を第１表に示した。On the other hand, it has dimensions of 1cm in height, 1cm in width, 0.6mm in thickness, and weighs 0.15f! : Prepare a plate-shaped silicon wafer, and apply pressure of 30 m/min to a diamond grindstone on a backup rotary table rotating at a backup circumferential speed of 90 m/min.
The surface was ground by pressing at 0g/c+& for 5 minutes, and the weight of the plate-shaped silicon wafer before and after grinding was measured to determine the amount of grinding, and the results are shown in Table 1.
比較例 １
実施例で用意した合成石英円板の表面をラッピングした
のちポリッシングし、このポリッシングしたままの満な
しの合成石英円板表面に実施例１ ］
１と同じ条件で人工ダイヤモンド膜を析出生成させ、比
較ダイヤモンド砥石を作製した。このダイヤモンド砥石
を用いて実施例１と全く同一条件で板状シリコンウェハ
ーを研削し、この板状シリコンウェハーの研削前後の重
さを求めて研削量を測定し、その測定結果を第１表に示
した。Comparative Example 1 The surface of the synthetic quartz disk prepared in Example 1 was lapped and then polished, and an artificial diamond film was deposited and formed on the polished surface of the synthetic quartz disk under the same conditions as Example 1. A comparative diamond grinding wheel was prepared using the following methods. Using this diamond grindstone, a plate-shaped silicon wafer was ground under exactly the same conditions as in Example 1, and the amount of grinding was measured by determining the weight of this plate-shaped silicon wafer before and after grinding. The measurement results are shown in Table 1. Indicated.
実施例 ２
直径：１５０ｍｍ、厚さ・１ ｍｍの金属Ｓｉ製円板を
用意し、この金属Ｓｉ製円板を、
エツチング液：Ｐｔ度８０％のフッ酸：１、濃度８０％
の硝酸＝４、
濃度８０％の酢酸：３、
の割合で混合した混合液、
エツチング液の温度、室温、
の条件でエツチング処理を行う以外はすべて実施例１と
全く同様に処理をすることにより、角柱突起を有する金
属Ｓｔ製円板基体を作製し、ついで」二層金属Ｓｊ製円
板基体表面に、
反応時間＝３時間、
己する以外は上記実施例１と全く同一条件で人工ダイヤ
モンド膜を析出生成させ、この発明の超精密研削用ダイ
ヤモンド砥石を作製した。Example 2 A metal Si disk with a diameter of 150 mm and a thickness of 1 mm was prepared, and the metal Si disk was etched with: 1 hydrofluoric acid with a Pt content of 80% and a concentration of 80%.
The etching process was carried out in exactly the same manner as in Example 1, except that the etching process was carried out using a mixed solution of nitric acid = 4, acetic acid with a concentration of 80%: 3, etching solution temperature, room temperature, and the following conditions. A disk substrate made of metal St having prismatic protrusions was prepared, and then an artificial diamond film was formed on the surface of the disk substrate made of two-layer metal Sj under exactly the same conditions as in Example 1, except that the reaction time was 3 hours. was precipitated to produce the ultra-precision grinding diamond grindstone of the present invention.
このダイヤモンド砥石を用いて実施例］と全く同様にし
て板状シリコンウェハーを研削し、その板状シリコンウ
ェハーの研削前後の重さを求めて研削量を測定し、その
結果を第１表に示した。Using this diamond grindstone, a plate-shaped silicon wafer was ground in exactly the same manner as in Example], and the amount of grinding was measured by determining the weight of the plate-shaped silicon wafer before and after grinding. The results are shown in Table 1. Ta.
比較例 ２
実施例２で用意した金属Ｓｌ製円板の表面をラッピング
したのちポリッシングし、ポリッシングしたままの溝な
しの金属ＳＬ製内円板砥石基体として実施例２と同一条
件で人工ダイヤモンド膜を析出生成させ、比較ダイヤモ
ンド砥石を作製した。このダイヤモンド砥石を用いて実
施例１と全く同一条件でシリコンウェハーを研削し、そ
のシリコンウェハーの研削量をΔ１り定し、その結果を
第１表に示した。Comparative Example 2 The surface of the metal SL disk prepared in Example 2 was lapped and then polished, and an artificial diamond film was applied under the same conditions as Example 2 as the polished SL inner disk grindstone substrate without grooves. A comparative diamond grinding wheel was produced by precipitation. A silicon wafer was ground using this diamond grindstone under exactly the same conditions as in Example 1, and the amount of grinding of the silicon wafer was determined by Δ1, and the results are shown in Table 1.
実施例 ３
直径：１５０ｍｍ、厚さ：３ｍｍのＭｏ製円板を用意し
、このＭｏ製円板の表面をラッピングしたのち、外径
５２ｎ＋＋ｎ、厚さ、１５μｍのダイヤモンド超薄刃砥
石１４．１．３７２ （５）
を用いて上記ラッピングしたＭｏ製円板の表面に幅＋ｌ
［ｉｎｍ、深さ ５μｍの寸法を有するＵ字溝および縦
：２５ｕｎ＋、横：２５μｍの寸法の平面をもつ角柱突
起を有するＭｏ製砥石基体を作製した。Example 3 A Mo disk with a diameter of 150 mm and a thickness of 3 mm was prepared, and the surface of this Mo disk was lapped, and the outer diameter was
52n++n, thickness, 15μm diamond ultra-thin blade grindstone 14.1.372 (5) Width +l on the surface of the above lapped Mo disk
A Mo grindstone base body was prepared which had a U-shaped groove having dimensions of [in.
このＭｏ製砥石基体を実施例１と全く同し条件で処理す
ることにより気相合成ダイヤモンド膜を上記Ｍ□製製布
石基体表面析出生成させダイヤモンド砥石を作製した。This Mo grindstone base was treated under exactly the same conditions as in Example 1, whereby a vapor-phase synthetic diamond film was deposited on the surface of the M□ base and a diamond whetstone was produced.
このダイヤモンド砥石を用いて板状シリコンウェハーを
研削し、その板状シリコンウェハーの研削前後の重さを
求めて研削量を測定し、その結果を第１表に示した。A plate-shaped silicon wafer was ground using this diamond grindstone, and the amount of grinding was measured by determining the weight of the plate-shaped silicon wafer before and after grinding. The results are shown in Table 1.
比較例 ３
実施例３で用意したＭ□製同円板表面をラッピングした
ままの溝なしのＭｏ製円板を砥石基体とし、実施例１と
同一条件で気相合成ダイヤモンド膜を析出生成させ、比
較ダイヤモンド砥石を作製し、実施例１と同一条件でシ
リコンウェハーを研削し、シリコンウェハーの研削量を
測定してその結果を第１表に示した。Comparative Example 3 Using a molybdenum disc without grooves, which had been lapped from the surface of the M□ disc prepared in Example 3, as a grinding wheel substrate, a vapor-phase synthetic diamond film was precipitated and formed under the same conditions as in Example 1. A comparative diamond grindstone was prepared, and a silicon wafer was ground under the same conditions as in Example 1. The amount of grinding of the silicon wafer was measured, and the results are shown in Table 1.
］ ５
第１表の結果から、同一材料砥石基体からなるダイヤモ
ンド砥石であってもダイヤモンド砥石の表面に溝を設け
ることにより、研削能率が大幅に向上することが４つか
り、この発明のダイヤモンド砥石を用いることにより研
削コストを大幅に削減することができるなと産業上すぐ
れた効果を奏するものである。] 5 From the results in Table 1, it was found that even if the diamond grinding wheel is made of the same material as the grinding wheel base, the grinding efficiency can be greatly improved by providing grooves on the surface of the diamond grinding wheel. By using it, grinding costs can be significantly reduced, which is an excellent industrial effect.
第１図は、表面に交叉するＵ字溝を形成したこの発明の
ダイヤモンド砥石の製造に用いる砥石基体表面拡大図、
第２図は、交叉するＵ字溝によって基体表面に形成され
た角柱突起の平面に人工ダイヤモンド膜を析出させた状
態を示す斜視説明拡大図、第３図は、フォトエツチング
法により基体表面にＵ字溝を形成する方法を示す説明図
、である。
１・・・砥石基体、 ２・・・表 面、３・・
・Ｕ字溝、 ４・・・角柱突起、５・・・大
王ダイヤモンド、
６・
フォトレジスト、
フォトマスク、
８・
紫外線、
９・
不透明部分。
出
願
人
菱
金
属
株
式
］Fig. 1 is an enlarged view of the surface of a grinding wheel base used for manufacturing the diamond grindstone of the present invention, which has intersecting U-shaped grooves formed on its surface, and Fig. 2 shows prismatic protrusions formed on the base surface by intersecting U-shaped grooves. FIG. 3 is a perspective explanatory enlarged view showing a state in which an artificial diamond film is deposited on a flat surface, and FIG. 1... Grinding wheel base, 2... Surface, 3...
・U-shaped groove, 4...Prismatic projection, 5...Daio Diamond, 6. Photoresist, photomask, 8. Ultraviolet light, 9. Opaque part. Applicant Ryo Metal Co., Ltd.]
Claims (1)
よって形成された凹凸研削面の少なくとも凸部分に気相
合成法により形成されたダイヤモンド膜を形成してなる
ことを特徴とするダイヤモンド砥石。(1) A diamond characterized by forming a diamond film formed by vapor phase synthesis on at least the convex portions of the uneven grinding surface formed by a plurality of regularly intersecting grooves on the surface of the grinding wheel base. Whetstone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25959290A JPH04141372A (en) | 1990-09-28 | 1990-09-28 | Diamond grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25959290A JPH04141372A (en) | 1990-09-28 | 1990-09-28 | Diamond grinding wheel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04141372A true JPH04141372A (en) | 1992-05-14 |
Family
ID=17336252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25959290A Pending JPH04141372A (en) | 1990-09-28 | 1990-09-28 | Diamond grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04141372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030031403A (en) * | 2001-10-15 | 2003-04-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | An abrasive machining plate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201877A (en) * | 1984-03-28 | 1985-10-12 | Mitsubishi Metal Corp | Diamond grinding wheel composed of deposited artificial diamond particles |
| JPS60242976A (en) * | 1984-02-24 | 1985-12-02 | ノ−ス ベエル エス．ピ−．エイ． | Rotary tool having operating area, which is separated by groove and coated with diamond grain |
| JPS6136112A (en) * | 1984-07-26 | 1986-02-20 | Sumitomo Electric Ind Ltd | Preparation of whetstone granule of poly-crystalline diamond |
| JPS6288570A (en) * | 1985-10-14 | 1987-04-23 | Agency Of Ind Science & Technol | Grinding wheel |
-
1990
- 1990-09-28 JP JP25959290A patent/JPH04141372A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60242976A (en) * | 1984-02-24 | 1985-12-02 | ノ−ス ベエル エス．ピ−．エイ． | Rotary tool having operating area, which is separated by groove and coated with diamond grain |
| JPS60201877A (en) * | 1984-03-28 | 1985-10-12 | Mitsubishi Metal Corp | Diamond grinding wheel composed of deposited artificial diamond particles |
| JPS6136112A (en) * | 1984-07-26 | 1986-02-20 | Sumitomo Electric Ind Ltd | Preparation of whetstone granule of poly-crystalline diamond |
| JPS6288570A (en) * | 1985-10-14 | 1987-04-23 | Agency Of Ind Science & Technol | Grinding wheel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030031403A (en) * | 2001-10-15 | 2003-04-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | An abrasive machining plate |
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