JPH0419198B2 - - Google Patents
Info
- Publication number
- JPH0419198B2 JPH0419198B2 JP58142918A JP14291883A JPH0419198B2 JP H0419198 B2 JPH0419198 B2 JP H0419198B2 JP 58142918 A JP58142918 A JP 58142918A JP 14291883 A JP14291883 A JP 14291883A JP H0419198 B2 JPH0419198 B2 JP H0419198B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- gas
- reaction
- hydrogen plasma
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 44
- 229910003460 diamond Inorganic materials 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 8
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 238000001308 synthesis method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 3
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000005469 synchrotron radiation Effects 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58142918A JPS6033300A (ja) | 1983-08-04 | 1983-08-04 | ダイヤモンドの気相合成方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58142918A JPS6033300A (ja) | 1983-08-04 | 1983-08-04 | ダイヤモンドの気相合成方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6033300A JPS6033300A (ja) | 1985-02-20 |
| JPH0419198B2 true JPH0419198B2 (enrdf_load_stackoverflow) | 1992-03-30 |
Family
ID=15326648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58142918A Granted JPS6033300A (ja) | 1983-08-04 | 1983-08-04 | ダイヤモンドの気相合成方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033300A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171295A (ja) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | 人工ダイヤモンドを蒸着生成する方法 |
| JPS61201694A (ja) * | 1985-02-28 | 1986-09-06 | Nec Corp | ダイヤモンドの気相合成法 |
| US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US4816286A (en) * | 1985-11-25 | 1989-03-28 | Showa Denko Kabushiki Kaisha | Process for synthesis of diamond by CVD |
| JPS62295819A (ja) * | 1986-06-14 | 1987-12-23 | Toyo Denji Kikai Seisakusho:Kk | 振動フイ−ダにおける部品の姿勢修整装置 |
| JPS6385011A (ja) * | 1986-09-26 | 1988-04-15 | Idemitsu Petrochem Co Ltd | ダイヤモンドの製造方法 |
| JPH0676666B2 (ja) * | 1987-02-10 | 1994-09-28 | 株式会社半導体エネルギ−研究所 | 炭素膜作製方法 |
| JPH02141494A (ja) * | 1988-07-30 | 1990-05-30 | Kobe Steel Ltd | ダイヤモンド気相合成装置 |
| US4981717A (en) * | 1989-02-24 | 1991-01-01 | Mcdonnell Douglas Corporation | Diamond like coating and method of forming |
-
1983
- 1983-08-04 JP JP58142918A patent/JPS6033300A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6033300A (ja) | 1985-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5891100A (ja) | ダイヤモンドの合成法 | |
| JPH0419198B2 (enrdf_load_stackoverflow) | ||
| JPH0518796B2 (enrdf_load_stackoverflow) | ||
| JPH0733243B2 (ja) | 光照射併用プラズマｃｖｄ法による硬質窒化ホウ素の製造法 | |
| JPH0448758B2 (enrdf_load_stackoverflow) | ||
| JPH0518798B2 (enrdf_load_stackoverflow) | ||
| JPS61236691A (ja) | ダイヤモンドの気相合成法 | |
| JPS6054996A (ja) | ダイヤモンドの合成法 | |
| JPH0351675B2 (enrdf_load_stackoverflow) | ||
| JPS63297299A (ja) | ダイヤモンドの気相合成法 | |
| JPS63117993A (ja) | ダイヤモンドの気相合成法 | |
| JPS63285192A (ja) | 気相法によるダイヤモンド合成法 | |
| JPH0341436B2 (enrdf_load_stackoverflow) | ||
| JPS61201694A (ja) | ダイヤモンドの気相合成法 | |
| JPS593098A (ja) | ダイヤモンドの合成法 | |
| JP2585342B2 (ja) | ダイヤモンド気相合成法 | |
| JPH0480000B2 (enrdf_load_stackoverflow) | ||
| JPS63123898A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS60112698A (ja) | ダイヤモンドの製造方法 | |
| JPS60200896A (ja) | 繊維状ダイヤモンドの合成法 | |
| JPH0518794B2 (enrdf_load_stackoverflow) | ||
| JPH0518797B2 (enrdf_load_stackoverflow) | ||
| JPS6321296A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS6357007A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS6156278A (ja) | 成膜方法 |