JPH0448758B2 - - Google Patents
Info
- Publication number
- JPH0448758B2 JPH0448758B2 JP58236737A JP23673783A JPH0448758B2 JP H0448758 B2 JPH0448758 B2 JP H0448758B2 JP 58236737 A JP58236737 A JP 58236737A JP 23673783 A JP23673783 A JP 23673783A JP H0448758 B2 JPH0448758 B2 JP H0448758B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- gas
- reaction
- hydrocarbons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58236737A JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58236737A JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60127300A JPS60127300A (ja) | 1985-07-06 |
JPH0448758B2 true JPH0448758B2 (enrdf_load_stackoverflow) | 1992-08-07 |
Family
ID=17005034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58236737A Granted JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60127300A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60171295A (ja) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | 人工ダイヤモンドを蒸着生成する方法 |
JPS62278196A (ja) * | 1986-05-27 | 1987-12-03 | Yoichi Hirose | ダイヤモンド合成方法 |
US4863529A (en) * | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
-
1983
- 1983-12-15 JP JP58236737A patent/JPS60127300A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60127300A (ja) | 1985-07-06 |
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