JPS60127300A - ダイヤモンドの気相合成方法 - Google Patents
ダイヤモンドの気相合成方法Info
- Publication number
- JPS60127300A JPS60127300A JP58236737A JP23673783A JPS60127300A JP S60127300 A JPS60127300 A JP S60127300A JP 58236737 A JP58236737 A JP 58236737A JP 23673783 A JP23673783 A JP 23673783A JP S60127300 A JPS60127300 A JP S60127300A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- gas
- substrate
- hydrogen
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 47
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 43
- 230000015572 biosynthetic process Effects 0.000 title claims description 8
- 238000003786 synthesis reaction Methods 0.000 title claims description 6
- 239000007789 gas Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 10
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 9
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000009434 installation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 229910003481 amorphous carbon Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000006552 photochemical reaction Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 230000002194 synthesizing effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58236737A JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58236737A JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60127300A true JPS60127300A (ja) | 1985-07-06 |
| JPH0448758B2 JPH0448758B2 (enrdf_load_stackoverflow) | 1992-08-07 |
Family
ID=17005034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58236737A Granted JPS60127300A (ja) | 1983-12-15 | 1983-12-15 | ダイヤモンドの気相合成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60127300A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171295A (ja) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | 人工ダイヤモンドを蒸着生成する方法 |
| JPS62278196A (ja) * | 1986-05-27 | 1987-12-03 | Yoichi Hirose | ダイヤモンド合成方法 |
| US4863529A (en) * | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
-
1983
- 1983-12-15 JP JP58236737A patent/JPS60127300A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171295A (ja) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | 人工ダイヤモンドを蒸着生成する方法 |
| JPS62278196A (ja) * | 1986-05-27 | 1987-12-03 | Yoichi Hirose | ダイヤモンド合成方法 |
| US4863529A (en) * | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448758B2 (enrdf_load_stackoverflow) | 1992-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4984534A (en) | Method for synthesis of diamond | |
| JPS5891100A (ja) | ダイヤモンドの合成法 | |
| JPH0624896A (ja) | ダイヤモンド合成方法 | |
| JPH0419198B2 (enrdf_load_stackoverflow) | ||
| JPS60127300A (ja) | ダイヤモンドの気相合成方法 | |
| JPH0518796B2 (enrdf_load_stackoverflow) | ||
| JPS6054996A (ja) | ダイヤモンドの合成法 | |
| JPS61236691A (ja) | ダイヤモンドの気相合成法 | |
| JPH0518798B2 (enrdf_load_stackoverflow) | ||
| JPS63297299A (ja) | ダイヤモンドの気相合成法 | |
| JPH0351675B2 (enrdf_load_stackoverflow) | ||
| JPH0341436B2 (enrdf_load_stackoverflow) | ||
| JPS60145995A (ja) | ダイヤモンド状カ−ボンの製造方法 | |
| JPS61201694A (ja) | ダイヤモンドの気相合成法 | |
| JPS63285192A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS593098A (ja) | ダイヤモンドの合成法 | |
| JPS62235293A (ja) | ダイヤモンドの合成法 | |
| JPH02120219A (ja) | ダイヤモンド粉末の合成方法 | |
| JPH0480000B2 (enrdf_load_stackoverflow) | ||
| JPH0481555B2 (enrdf_load_stackoverflow) | ||
| JPH01148791A (ja) | 人工ダイヤモンド膜の形成方法 | |
| JPS63123898A (ja) | 気相法によるダイヤモンド合成法 | |
| JPS62138394A (ja) | ダイヤモンドの製造方法 | |
| JPH01298095A (ja) | ダイヤモンド状炭素膜の製造方法 | |
| JPS6350398A (ja) | 気相法によるダイヤモンド合成法 |