JPH0351675B2 - - Google Patents

Info

Publication number
JPH0351675B2
JPH0351675B2 JP58217374A JP21737483A JPH0351675B2 JP H0351675 B2 JPH0351675 B2 JP H0351675B2 JP 58217374 A JP58217374 A JP 58217374A JP 21737483 A JP21737483 A JP 21737483A JP H0351675 B2 JPH0351675 B2 JP H0351675B2
Authority
JP
Japan
Prior art keywords
substrate
ultraviolet light
wavelength
diamond
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58217374A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60112697A (ja
Inventor
Takuzo Sato
Mitsuo Kasamatsu
Kenso Myazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58217374A priority Critical patent/JPS60112697A/ja
Publication of JPS60112697A publication Critical patent/JPS60112697A/ja
Publication of JPH0351675B2 publication Critical patent/JPH0351675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58217374A 1983-11-18 1983-11-18 ダイヤモンドの光化学的堆積合成方法およびその装置 Granted JPS60112697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58217374A JPS60112697A (ja) 1983-11-18 1983-11-18 ダイヤモンドの光化学的堆積合成方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58217374A JPS60112697A (ja) 1983-11-18 1983-11-18 ダイヤモンドの光化学的堆積合成方法およびその装置

Publications (2)

Publication Number Publication Date
JPS60112697A JPS60112697A (ja) 1985-06-19
JPH0351675B2 true JPH0351675B2 (enrdf_load_stackoverflow) 1991-08-07

Family

ID=16703167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58217374A Granted JPS60112697A (ja) 1983-11-18 1983-11-18 ダイヤモンドの光化学的堆積合成方法およびその装置

Country Status (1)

Country Link
JP (1) JPS60112697A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171295A (ja) * 1984-02-14 1985-09-04 Mitsubishi Metal Corp 人工ダイヤモンドを蒸着生成する方法
JPS61201694A (ja) * 1985-02-28 1986-09-06 Nec Corp ダイヤモンドの気相合成法
JPH0662357B2 (ja) * 1985-04-30 1994-08-17 京セラ株式会社 ダイヤモンド粉末の製法
JPS623095A (ja) * 1985-06-07 1987-01-09 モリソン・パンプス・エスエイ・（プロプライアタリ−）・リミテツド 結晶生長法
US4981717A (en) * 1989-02-24 1991-01-01 Mcdonnell Douglas Corporation Diamond like coating and method of forming
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109895A (en) * 1980-01-30 1981-08-31 Hitachi Ltd Gaseous phase growing method for semiconductor
JPS5927753B2 (ja) * 1981-11-25 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法

Also Published As

Publication number Publication date
JPS60112697A (ja) 1985-06-19

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