JPS60175412A - 窒化ガリウムの成長方法 - Google Patents

窒化ガリウムの成長方法

Info

Publication number
JPS60175412A
JPS60175412A JP59030805A JP3080584A JPS60175412A JP S60175412 A JPS60175412 A JP S60175412A JP 59030805 A JP59030805 A JP 59030805A JP 3080584 A JP3080584 A JP 3080584A JP S60175412 A JPS60175412 A JP S60175412A
Authority
JP
Japan
Prior art keywords
gan
crystal
gallium nitride
reaction
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59030805A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572742B2 (enrdf_load_html_response
Inventor
Toshiharu Kawabata
川端　敏治
Susumu Furuike
進 古池
Toshio Matsuda
俊夫 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59030805A priority Critical patent/JPS60175412A/ja
Publication of JPS60175412A publication Critical patent/JPS60175412A/ja
Publication of JPH0572742B2 publication Critical patent/JPH0572742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP59030805A 1984-02-21 1984-02-21 窒化ガリウムの成長方法 Granted JPS60175412A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59030805A JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59030805A JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Publications (2)

Publication Number Publication Date
JPS60175412A true JPS60175412A (ja) 1985-09-09
JPH0572742B2 JPH0572742B2 (enrdf_load_html_response) 1993-10-12

Family

ID=12313894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59030805A Granted JPS60175412A (ja) 1984-02-21 1984-02-21 窒化ガリウムの成長方法

Country Status (1)

Country Link
JP (1) JPS60175412A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297023A (ja) † 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
EP0687749A1 (en) * 1994-06-14 1995-12-20 Thomas Swan And Co., Ltd. Apparatus for chemical vapour deposition
JPH11135885A (ja) * 1997-10-30 1999-05-21 Matsushita Electric Ind Co Ltd 半導体の製造方法及び半導体レーザ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297023A (ja) † 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
EP0687749A1 (en) * 1994-06-14 1995-12-20 Thomas Swan And Co., Ltd. Apparatus for chemical vapour deposition
US5871586A (en) * 1994-06-14 1999-02-16 T. Swan & Co. Limited Chemical vapor deposition
JPH11135885A (ja) * 1997-10-30 1999-05-21 Matsushita Electric Ind Co Ltd 半導体の製造方法及び半導体レーザ装置
US6611005B2 (en) 1997-10-30 2003-08-26 Matsushita Electric Industrial Co., Ltd. Method for producing semiconductor and semiconductor laser device

Also Published As

Publication number Publication date
JPH0572742B2 (enrdf_load_html_response) 1993-10-12

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term