JPS60171770A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60171770A
JPS60171770A JP59029130A JP2913084A JPS60171770A JP S60171770 A JPS60171770 A JP S60171770A JP 59029130 A JP59029130 A JP 59029130A JP 2913084 A JP2913084 A JP 2913084A JP S60171770 A JPS60171770 A JP S60171770A
Authority
JP
Japan
Prior art keywords
layer
recessed
semiconductor device
region
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59029130A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0317225B2 (enExample
Inventor
Hiroaki Sakamoto
坂本　洋明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd, Infineon Technologies Americas Corp, International Rectifier Corp USA filed Critical International Rectifier Corp Japan Ltd
Priority to JP59029130A priority Critical patent/JPS60171770A/ja
Publication of JPS60171770A publication Critical patent/JPS60171770A/ja
Publication of JPH0317225B2 publication Critical patent/JPH0317225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP59029130A 1984-02-17 1984-02-17 半導体装置の製造方法 Granted JPS60171770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59029130A JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59029130A JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60171770A true JPS60171770A (ja) 1985-09-05
JPH0317225B2 JPH0317225B2 (enExample) 1991-03-07

Family

ID=12267711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59029130A Granted JPS60171770A (ja) 1984-02-17 1984-02-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60171770A (enExample)

Also Published As

Publication number Publication date
JPH0317225B2 (enExample) 1991-03-07

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