JPS60167378A - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置

Info

Publication number
JPS60167378A
JPS60167378A JP59272906A JP27290684A JPS60167378A JP S60167378 A JPS60167378 A JP S60167378A JP 59272906 A JP59272906 A JP 59272906A JP 27290684 A JP27290684 A JP 27290684A JP S60167378 A JPS60167378 A JP S60167378A
Authority
JP
Japan
Prior art keywords
silicon dioxide
insulating film
film
semiconductor substrate
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59272906A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022311B2 (enrdf_load_stackoverflow
Inventor
Yoshiaki Kamigaki
良昭 神垣
Katsutada Horiuchi
勝忠 堀内
Takaaki Hagiwara
萩原　隆旦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59272906A priority Critical patent/JPS60167378A/ja
Publication of JPS60167378A publication Critical patent/JPS60167378A/ja
Publication of JPH022311B2 publication Critical patent/JPH022311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP59272906A 1984-12-26 1984-12-26 半導体不揮発性記憶装置 Granted JPS60167378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272906A JPS60167378A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272906A JPS60167378A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7573205A Division JPS5910074B2 (ja) 1975-06-18 1975-06-18 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPS60167378A true JPS60167378A (ja) 1985-08-30
JPH022311B2 JPH022311B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=17520402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272906A Granted JPS60167378A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS60167378A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
JP2012074708A (ja) * 1997-08-29 2012-04-12 Semiconductor Energy Lab Co Ltd 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654614U (ja) * 1992-12-29 1994-07-26 東洋運搬機株式会社 ローラコンベヤの回転ロック装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
JP2012074708A (ja) * 1997-08-29 2012-04-12 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH022311B2 (enrdf_load_stackoverflow) 1990-01-17

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