JPS60167377A - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置

Info

Publication number
JPS60167377A
JPS60167377A JP59272905A JP27290584A JPS60167377A JP S60167377 A JPS60167377 A JP S60167377A JP 59272905 A JP59272905 A JP 59272905A JP 27290584 A JP27290584 A JP 27290584A JP S60167377 A JPS60167377 A JP S60167377A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor substrate
memory device
nonvolatile memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59272905A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022310B2 (enrdf_load_stackoverflow
Inventor
Yoshiaki Kamigaki
良昭 神垣
Katsutada Horiuchi
勝忠 堀内
Takaaki Hagiwara
萩原　隆旦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59272905A priority Critical patent/JPS60167377A/ja
Publication of JPS60167377A publication Critical patent/JPS60167377A/ja
Publication of JPH022310B2 publication Critical patent/JPH022310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP59272905A 1984-12-26 1984-12-26 半導体不揮発性記憶装置 Granted JPS60167377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272905A JPS60167377A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272905A JPS60167377A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7573205A Division JPS5910074B2 (ja) 1975-06-18 1975-06-18 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPS60167377A true JPS60167377A (ja) 1985-08-30
JPH022310B2 JPH022310B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=17520390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272905A Granted JPS60167377A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS60167377A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
US9400530B2 (en) 2013-03-27 2016-07-26 Fujitsu Limited Electronic apparatus and member rotating operation method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057140U (ja) * 1991-07-16 1993-02-02 株式会社ダイドー 回転クロゼツト

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
US9400530B2 (en) 2013-03-27 2016-07-26 Fujitsu Limited Electronic apparatus and member rotating operation method

Also Published As

Publication number Publication date
JPH022310B2 (enrdf_load_stackoverflow) 1990-01-17

Similar Documents

Publication Publication Date Title
WO1993024959A1 (fr) Memoire remanente a semi-conducteurs, dispositif a semi-conducteurs, et son procede de fabrication
JPS60167377A (ja) 半導体不揮発性記憶装置
JPS5910074B2 (ja) 半導体不揮発性記憶装置
EP0383011A2 (en) Semiconductor non-volatile memory device
JPS60167378A (ja) 半導体不揮発性記憶装置
JPS60167379A (ja) 半導体不揮発性記憶装置の製造方法
JPH06291330A (ja) 半導体不揮発性記憶素子とその製造方法
JPS6184868A (ja) 不揮発性半導体記憶装置
JPS60167380A (ja) 半導体不揮発性記憶装置の製造方法
JPS6272171A (ja) 半導体メモリ
JPH05343694A (ja) 半導体不揮発性記憶素子の製造方法
JPH06130413A (ja) 液晶表示装置の製造方法
JPS62266872A (ja) 半導体記憶装置
JPS59169179A (ja) 半導体集積回路装置
JPS62125679A (ja) Ｍｏｓ半導体記憶装置
JPH08293563A (ja) 半導体不揮発性記憶装置およびその製造方法
JPS63253671A (ja) 半導体装置の製造方法
JPS61228661A (ja) 半導体装置及びその製造方法
JP2846196B2 (ja) 半導体記憶装置の製造方法
JPH02307277A (ja) 不揮発性半導体装置の製造方法
JPS5858772A (ja) Ｍｎｏｓ記憶素子を有する集積回路の製造方法
JPS59121978A (ja) 半導体装置の製造方法
JPS5943832B2 (ja) 半導体装置の製造方法
JPH0341775A (ja) 半導体記憶装置の製造方法
JPH05198823A (ja) 半導体不揮発性記憶素子とその製造方法と書き込み方法