JPS60163487A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS60163487A JPS60163487A JP1772584A JP1772584A JPS60163487A JP S60163487 A JPS60163487 A JP S60163487A JP 1772584 A JP1772584 A JP 1772584A JP 1772584 A JP1772584 A JP 1772584A JP S60163487 A JPS60163487 A JP S60163487A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- substrate
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005253 cladding Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 3
- 239000002019 doping agent Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 67
- 239000013078 crystal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1772584A JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1772584A JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60163487A true JPS60163487A (ja) | 1985-08-26 |
| JPH0552676B2 JPH0552676B2 (enrdf_load_html_response) | 1993-08-06 |
Family
ID=11951718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1772584A Granted JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60163487A (enrdf_load_html_response) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62282845A (ja) * | 1986-05-28 | 1987-12-08 | Fanuc Ltd | 倣い加工による荒どり加工方法 |
| US6358316B1 (en) | 1992-09-10 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure |
| US10554207B1 (en) | 2018-07-31 | 2020-02-04 | Northrop Grumman Systems Corporation | Superconducting non-destructive readout circuits |
| US10615783B2 (en) | 2018-07-31 | 2020-04-07 | Northrop Grumman Systems Corporation | RQL D flip-flops |
| US10650319B2 (en) | 2015-02-06 | 2020-05-12 | Northrop Grumman Systems Corporation | Flux control of qubit under resonant excitation |
| US10756712B2 (en) | 2017-11-13 | 2020-08-25 | Northrop Grumman Systems Corporation | RQL phase-mode flip-flop |
| US11201608B2 (en) | 2020-04-24 | 2021-12-14 | Northrop Grumman Systems Corporation | Superconducting latch system |
-
1984
- 1984-02-03 JP JP1772584A patent/JPS60163487A/ja active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62282845A (ja) * | 1986-05-28 | 1987-12-08 | Fanuc Ltd | 倣い加工による荒どり加工方法 |
| US6358316B1 (en) | 1992-09-10 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure |
| US10650319B2 (en) | 2015-02-06 | 2020-05-12 | Northrop Grumman Systems Corporation | Flux control of qubit under resonant excitation |
| US11010686B2 (en) | 2015-02-06 | 2021-05-18 | Northrop Grumman Systems Corporation | Flux control of qubit under resonant excitation |
| US10756712B2 (en) | 2017-11-13 | 2020-08-25 | Northrop Grumman Systems Corporation | RQL phase-mode flip-flop |
| US10554207B1 (en) | 2018-07-31 | 2020-02-04 | Northrop Grumman Systems Corporation | Superconducting non-destructive readout circuits |
| US10615783B2 (en) | 2018-07-31 | 2020-04-07 | Northrop Grumman Systems Corporation | RQL D flip-flops |
| US10868540B2 (en) | 2018-07-31 | 2020-12-15 | Northrop Grumman Systems Corporation | Superconducting non-destructive readout circuits |
| US11159168B2 (en) | 2018-07-31 | 2021-10-26 | Northrop Grumman Systems Corporation | Superconducting non-destructive readout circuits |
| US11201608B2 (en) | 2020-04-24 | 2021-12-14 | Northrop Grumman Systems Corporation | Superconducting latch system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0552676B2 (enrdf_load_html_response) | 1993-08-06 |
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