JPS60161654A - 半導体立体回路素子の製造方法 - Google Patents

半導体立体回路素子の製造方法

Info

Publication number
JPS60161654A
JPS60161654A JP59016168A JP1616884A JPS60161654A JP S60161654 A JPS60161654 A JP S60161654A JP 59016168 A JP59016168 A JP 59016168A JP 1616884 A JP1616884 A JP 1616884A JP S60161654 A JPS60161654 A JP S60161654A
Authority
JP
Japan
Prior art keywords
film
circuit element
semiconductor
silicon oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59016168A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542825B2 (enrdf_load_stackoverflow
Inventor
Takao Hashimoto
孝男 橋本
Isao Nakano
中野　勇男
Hiroyuki Aoe
青江　弘行
Takashi Nakakado
中門　孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59016168A priority Critical patent/JPS60161654A/ja
Publication of JPS60161654A publication Critical patent/JPS60161654A/ja
Publication of JPH0542825B2 publication Critical patent/JPH0542825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59016168A 1984-02-02 1984-02-02 半導体立体回路素子の製造方法 Granted JPS60161654A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016168A JPS60161654A (ja) 1984-02-02 1984-02-02 半導体立体回路素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016168A JPS60161654A (ja) 1984-02-02 1984-02-02 半導体立体回路素子の製造方法

Publications (2)

Publication Number Publication Date
JPS60161654A true JPS60161654A (ja) 1985-08-23
JPH0542825B2 JPH0542825B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=11908976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016168A Granted JPS60161654A (ja) 1984-02-02 1984-02-02 半導体立体回路素子の製造方法

Country Status (1)

Country Link
JP (1) JPS60161654A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338278A (en) * 1976-09-20 1978-04-08 Fujitsu Ltd Semiconductor device
JPS592317A (ja) * 1982-06-28 1984-01-07 Nec Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338278A (en) * 1976-09-20 1978-04-08 Fujitsu Ltd Semiconductor device
JPS592317A (ja) * 1982-06-28 1984-01-07 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0542825B2 (enrdf_load_stackoverflow) 1993-06-29

Similar Documents

Publication Publication Date Title
JP3344786B2 (ja) 半導体メモリセルのキャパシタ電極製造方法
JPH02260441A (ja) 半導体素子
JPH10233392A (ja) 半導体装置の製造方法
JPS60161654A (ja) 半導体立体回路素子の製造方法
JPS5918874B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPH03263330A (ja) 半導体装置
JPS59184555A (ja) 半導体集積回路装置およびその製造方法
JPS60161652A (ja) 半導体立体回路素子の製造方法
JP3189320B2 (ja) 半導体装置の製造方法
JPS603157A (ja) 半導体装置の製造方法
JPH08298314A (ja) 不揮発性半導体記憶装置及びその製造方法
JPS59195859A (ja) 半導体装置の製造方法
JPS6024009A (ja) 半導体の不純物領域形成方法
JPH0562972A (ja) 半導体装置及びその製造方法
JP2901262B2 (ja) ポリシリコン抵抗素子の製造方法
JP3558797B2 (ja) 半導体装置の製造方法
JPS61107747A (ja) 半導体装置の製造方法
JPS60161653A (ja) 半導体立体回路素子の製造方法
JPH02199865A (ja) 半導体装置の製造方法
JPS6161546B2 (enrdf_load_stackoverflow)
JPS6279625A (ja) 半導体装置の製造方法
JPS62130525A (ja) 半導体集積回路の製法
JPS5914901B2 (ja) 半導体装置の製造方法
JPH01168051A (ja) 半導体装置の製造方法
JPS5913374A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term