JPS60160164A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS60160164A JPS60160164A JP58192748A JP19274883A JPS60160164A JP S60160164 A JPS60160164 A JP S60160164A JP 58192748 A JP58192748 A JP 58192748A JP 19274883 A JP19274883 A JP 19274883A JP S60160164 A JPS60160164 A JP S60160164A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base layer
- emitter
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 20
- 241000293849 Cordylanthus Species 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 22
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 boron ions Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- YYPYFBVEXBVLBS-UHFFFAOYSA-N [B].[S] Chemical compound [B].[S] YYPYFBVEXBVLBS-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58192748A JPS60160164A (ja) | 1983-10-15 | 1983-10-15 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58192748A JPS60160164A (ja) | 1983-10-15 | 1983-10-15 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60160164A true JPS60160164A (ja) | 1985-08-21 |
| JPH0362014B2 JPH0362014B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-09-24 |
Family
ID=16296393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58192748A Granted JPS60160164A (ja) | 1983-10-15 | 1983-10-15 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60160164A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10206133C1 (de) * | 2002-02-14 | 2003-09-25 | Infineon Technologies Ag | Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151570A (en) * | 1976-06-11 | 1977-12-16 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5835971A (ja) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5878457A (ja) * | 1981-11-05 | 1983-05-12 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS59217363A (ja) * | 1983-05-25 | 1984-12-07 | Hitachi Ltd | バイポ−ラ型半導体装置の製造方法 |
| JPS6021568A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | 半導体装置の製造方法 |
-
1983
- 1983-10-15 JP JP58192748A patent/JPS60160164A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151570A (en) * | 1976-06-11 | 1977-12-16 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5835971A (ja) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5878457A (ja) * | 1981-11-05 | 1983-05-12 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS59217363A (ja) * | 1983-05-25 | 1984-12-07 | Hitachi Ltd | バイポ−ラ型半導体装置の製造方法 |
| JPS6021568A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10206133C1 (de) * | 2002-02-14 | 2003-09-25 | Infineon Technologies Ag | Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET) |
| US6894367B2 (en) | 2002-02-14 | 2005-05-17 | Infineon Technologies Ag | Vertical bipolar transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0362014B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-09-24 |
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