JPS60151298A - 有機金属気相結晶成長方法 - Google Patents
有機金属気相結晶成長方法Info
- Publication number
- JPS60151298A JPS60151298A JP59004753A JP475384A JPS60151298A JP S60151298 A JPS60151298 A JP S60151298A JP 59004753 A JP59004753 A JP 59004753A JP 475384 A JP475384 A JP 475384A JP S60151298 A JPS60151298 A JP S60151298A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- type epitaxial
- pressure
- raw material
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004753A JPS60151298A (ja) | 1984-01-17 | 1984-01-17 | 有機金属気相結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004753A JPS60151298A (ja) | 1984-01-17 | 1984-01-17 | 有機金属気相結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60151298A true JPS60151298A (ja) | 1985-08-09 |
| JPH0346440B2 JPH0346440B2 (enExample) | 1991-07-16 |
Family
ID=11592665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59004753A Granted JPS60151298A (ja) | 1984-01-17 | 1984-01-17 | 有機金属気相結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60151298A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006265167A (ja) * | 2005-03-23 | 2006-10-05 | Nichia Chem Ind Ltd | トリアルキルガリウムの製造方法 |
-
1984
- 1984-01-17 JP JP59004753A patent/JPS60151298A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006265167A (ja) * | 2005-03-23 | 2006-10-05 | Nichia Chem Ind Ltd | トリアルキルガリウムの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0346440B2 (enExample) | 1991-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |