JPS60151147U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60151147U
JPS60151147U JP3887284U JP3887284U JPS60151147U JP S60151147 U JPS60151147 U JP S60151147U JP 3887284 U JP3887284 U JP 3887284U JP 3887284 U JP3887284 U JP 3887284U JP S60151147 U JPS60151147 U JP S60151147U
Authority
JP
Japan
Prior art keywords
thin film
silicon nitride
semiconductor device
plasma silicon
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3887284U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0341479Y2 (enrdf_load_stackoverflow
Inventor
久雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3887284U priority Critical patent/JPS60151147U/ja
Priority to CA000470776A priority patent/CA1218470A/en
Priority to EP84116301A priority patent/EP0152624B1/en
Priority to DE8484116301T priority patent/DE3485817T2/de
Publication of JPS60151147U publication Critical patent/JPS60151147U/ja
Priority to US07/703,057 priority patent/US5162892A/en
Application granted granted Critical
Publication of JPH0341479Y2 publication Critical patent/JPH0341479Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP3887284U 1983-12-24 1984-03-16 半導体装置 Granted JPS60151147U (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3887284U JPS60151147U (ja) 1984-03-16 1984-03-16 半導体装置
CA000470776A CA1218470A (en) 1983-12-24 1984-12-21 Semiconductor device with polycrystalline silicon active region and ic including semiconductor device
EP84116301A EP0152624B1 (en) 1983-12-24 1984-12-24 Method of manufacturing a semiconductor device having a polycristalline silicon-active region.
DE8484116301T DE3485817T2 (de) 1983-12-24 1984-12-24 Verfahren zur herstellung einer halbleiteranordnung mit einer aktiven zone aus polykristallinem silicium.
US07/703,057 US5162892A (en) 1983-12-24 1991-05-17 Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3887284U JPS60151147U (ja) 1984-03-16 1984-03-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS60151147U true JPS60151147U (ja) 1985-10-07
JPH0341479Y2 JPH0341479Y2 (enrdf_load_stackoverflow) 1991-08-30

Family

ID=30546281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3887284U Granted JPS60151147U (ja) 1983-12-24 1984-03-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS60151147U (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131261A (ja) * 2011-05-13 2016-07-21 株式会社半導体エネルギー研究所 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131261A (ja) * 2011-05-13 2016-07-21 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0341479Y2 (enrdf_load_stackoverflow) 1991-08-30

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