JPH0341479Y2 - - Google Patents
Info
- Publication number
- JPH0341479Y2 JPH0341479Y2 JP3887284U JP3887284U JPH0341479Y2 JP H0341479 Y2 JPH0341479 Y2 JP H0341479Y2 JP 3887284 U JP3887284 U JP 3887284U JP 3887284 U JP3887284 U JP 3887284U JP H0341479 Y2 JPH0341479 Y2 JP H0341479Y2
- Authority
- JP
- Japan
- Prior art keywords
- mos
- film
- silicon nitride
- tft
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 39
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3887284U JPS60151147U (ja) | 1984-03-16 | 1984-03-16 | 半導体装置 |
| CA000470776A CA1218470A (en) | 1983-12-24 | 1984-12-21 | Semiconductor device with polycrystalline silicon active region and ic including semiconductor device |
| DE8484116301T DE3485817T2 (de) | 1983-12-24 | 1984-12-24 | Verfahren zur herstellung einer halbleiteranordnung mit einer aktiven zone aus polykristallinem silicium. |
| EP84116301A EP0152624B1 (en) | 1983-12-24 | 1984-12-24 | Method of manufacturing a semiconductor device having a polycristalline silicon-active region. |
| US07/703,057 US5162892A (en) | 1983-12-24 | 1991-05-17 | Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3887284U JPS60151147U (ja) | 1984-03-16 | 1984-03-16 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60151147U JPS60151147U (ja) | 1985-10-07 |
| JPH0341479Y2 true JPH0341479Y2 (enrdf_load_stackoverflow) | 1991-08-30 |
Family
ID=30546281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3887284U Granted JPS60151147U (ja) | 1983-12-24 | 1984-03-16 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60151147U (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012157472A1 (en) * | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
1984
- 1984-03-16 JP JP3887284U patent/JPS60151147U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60151147U (ja) | 1985-10-07 |
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