JPH0228270B2 - - Google Patents

Info

Publication number
JPH0228270B2
JPH0228270B2 JP59133202A JP13320284A JPH0228270B2 JP H0228270 B2 JPH0228270 B2 JP H0228270B2 JP 59133202 A JP59133202 A JP 59133202A JP 13320284 A JP13320284 A JP 13320284A JP H0228270 B2 JPH0228270 B2 JP H0228270B2
Authority
JP
Japan
Prior art keywords
crystal semiconductor
region
single crystal
insulating layer
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59133202A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6113661A (ja
Inventor
Akikazu Oono
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59133202A priority Critical patent/JPS6113661A/ja
Publication of JPS6113661A publication Critical patent/JPS6113661A/ja
Publication of JPH0228270B2 publication Critical patent/JPH0228270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59133202A 1984-06-29 1984-06-29 半導体装置およびその製造方法 Granted JPS6113661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59133202A JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59133202A JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6113661A JPS6113661A (ja) 1986-01-21
JPH0228270B2 true JPH0228270B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=15099114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59133202A Granted JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6113661A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060035A (en) * 1989-07-13 1991-10-22 Mitsubishi Denki Kabushiki Kaisha Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
JP5130596B2 (ja) * 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
JP5122212B2 (ja) * 2007-08-02 2013-01-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
WO2009110049A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置とその製造方法
US8241976B2 (en) 2008-02-15 2012-08-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor surrounding gate transistor device and production method therefor
US8158468B2 (en) 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device
WO2009110050A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置の製造方法
US8163605B2 (en) 2008-02-15 2012-04-24 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
US8211758B2 (en) 2008-02-15 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and method of producing the same
WO2009110048A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置及びその製造方法
JP6014726B2 (ja) * 2008-02-15 2016-10-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置及びその製造方法
WO2009101704A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
JP2011066109A (ja) 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体記憶装置
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050064B2 (ja) * 1982-08-24 1985-11-06 株式会社東芝 相補型ｍｏｓ半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6113661A (ja) 1986-01-21

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