JPS60144985A - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法

Info

Publication number
JPS60144985A
JPS60144985A JP58248251A JP24825183A JPS60144985A JP S60144985 A JPS60144985 A JP S60144985A JP 58248251 A JP58248251 A JP 58248251A JP 24825183 A JP24825183 A JP 24825183A JP S60144985 A JPS60144985 A JP S60144985A
Authority
JP
Japan
Prior art keywords
laser
array
wafer
separation
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58248251A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0144030B2 (enrdf_load_stackoverflow
Inventor
Masayoshi Karuishi
軽石　雅圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58248251A priority Critical patent/JPS60144985A/ja
Publication of JPS60144985A publication Critical patent/JPS60144985A/ja
Publication of JPH0144030B2 publication Critical patent/JPH0144030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP58248251A 1983-12-30 1983-12-30 半導体発光素子の製造方法 Granted JPS60144985A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58248251A JPS60144985A (ja) 1983-12-30 1983-12-30 半導体発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58248251A JPS60144985A (ja) 1983-12-30 1983-12-30 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS60144985A true JPS60144985A (ja) 1985-07-31
JPH0144030B2 JPH0144030B2 (enrdf_load_stackoverflow) 1989-09-25

Family

ID=17175389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58248251A Granted JPS60144985A (ja) 1983-12-30 1983-12-30 半導体発光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS60144985A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
JPH04164350A (ja) * 1990-10-29 1992-06-10 Matsushita Electron Corp 半導体基板の劈開方法
US5300806A (en) * 1989-11-21 1994-04-05 Eastman Kodak Company Separation of diode array chips during fabrication thereof
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
JP2009004820A (ja) * 2006-11-30 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method
US8361883B2 (en) * 2002-03-12 2013-01-29 Hamamatsu Photonics K.K. Laser processing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
US5300806A (en) * 1989-11-21 1994-04-05 Eastman Kodak Company Separation of diode array chips during fabrication thereof
JPH04164350A (ja) * 1990-10-29 1992-06-10 Matsushita Electron Corp 半導体基板の劈開方法
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US10796959B2 (en) 2000-09-13 2020-10-06 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7592238B2 (en) 2000-09-13 2009-09-22 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7615721B2 (en) 2000-09-13 2009-11-10 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7626137B2 (en) * 2000-09-13 2009-12-01 Hamamatsu Photonics K.K. Laser cutting by forming a modified region within an object and generating fractures
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method
US8361883B2 (en) * 2002-03-12 2013-01-29 Hamamatsu Photonics K.K. Laser processing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method
JP2009004820A (ja) * 2006-11-30 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法

Also Published As

Publication number Publication date
JPH0144030B2 (enrdf_load_stackoverflow) 1989-09-25

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