JPS6249998B2 - - Google Patents

Info

Publication number
JPS6249998B2
JPS6249998B2 JP54142520A JP14252079A JPS6249998B2 JP S6249998 B2 JPS6249998 B2 JP S6249998B2 JP 54142520 A JP54142520 A JP 54142520A JP 14252079 A JP14252079 A JP 14252079A JP S6249998 B2 JPS6249998 B2 JP S6249998B2
Authority
JP
Japan
Prior art keywords
layer
groove
grooves
ohmic metal
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54142520A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5666085A (en
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14252079A priority Critical patent/JPS5666085A/ja
Publication of JPS5666085A publication Critical patent/JPS5666085A/ja
Publication of JPS6249998B2 publication Critical patent/JPS6249998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP14252079A 1979-11-02 1979-11-02 Semiconductor laser element Granted JPS5666085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14252079A JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14252079A JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5666085A JPS5666085A (en) 1981-06-04
JPS6249998B2 true JPS6249998B2 (enrdf_load_stackoverflow) 1987-10-22

Family

ID=15317261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14252079A Granted JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5666085A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165735U (enrdf_load_stackoverflow) * 1980-05-12 1981-12-08
JPS56161685A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Manufacture of semiconductor laser
JPH0489867U (enrdf_load_stackoverflow) * 1990-12-14 1992-08-05

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105790A (en) * 1976-03-01 1977-09-05 Nec Corp Injection type semiconductor laser element

Also Published As

Publication number Publication date
JPS5666085A (en) 1981-06-04

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