JPS60143633A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60143633A
JPS60143633A JP25054384A JP25054384A JPS60143633A JP S60143633 A JPS60143633 A JP S60143633A JP 25054384 A JP25054384 A JP 25054384A JP 25054384 A JP25054384 A JP 25054384A JP S60143633 A JPS60143633 A JP S60143633A
Authority
JP
Japan
Prior art keywords
etching
fluorine
gas
containing hydrocarbon
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25054384A
Other languages
English (en)
Japanese (ja)
Other versions
JPS614179B2 (enrdf_load_stackoverflow
Inventor
Yoshio Honma
喜夫 本間
Hisao Nozawa
野沢　悠夫
Yukiyoshi Harada
原田　征喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP25054384A priority Critical patent/JPS60143633A/ja
Publication of JPS60143633A publication Critical patent/JPS60143633A/ja
Publication of JPS614179B2 publication Critical patent/JPS614179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP25054384A 1984-11-29 1984-11-29 半導体装置の製造方法 Granted JPS60143633A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25054384A JPS60143633A (ja) 1984-11-29 1984-11-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25054384A JPS60143633A (ja) 1984-11-29 1984-11-29 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4771476A Division JPS6012779B2 (ja) 1976-04-28 1976-04-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60143633A true JPS60143633A (ja) 1985-07-29
JPS614179B2 JPS614179B2 (enrdf_load_stackoverflow) 1986-02-07

Family

ID=17209469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25054384A Granted JPS60143633A (ja) 1984-11-29 1984-11-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60143633A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233293B1 (ko) * 1996-11-26 1999-12-01 김영환 반도체 장치의 소자 분리막 형성방법
KR100233266B1 (ko) * 1996-11-26 1999-12-01 김영환 반도체 장치의 소자 분리막 형성방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158574U (enrdf_load_stackoverflow) * 1984-09-21 1986-04-19

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (enrdf_load_stackoverflow) * 1973-05-17 1975-04-04
JPS5039876A (enrdf_load_stackoverflow) * 1973-08-11 1975-04-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (enrdf_load_stackoverflow) * 1973-05-17 1975-04-04
JPS5039876A (enrdf_load_stackoverflow) * 1973-08-11 1975-04-12

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233293B1 (ko) * 1996-11-26 1999-12-01 김영환 반도체 장치의 소자 분리막 형성방법
KR100233266B1 (ko) * 1996-11-26 1999-12-01 김영환 반도체 장치의 소자 분리막 형성방법

Also Published As

Publication number Publication date
JPS614179B2 (enrdf_load_stackoverflow) 1986-02-07

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