JPS60136263A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60136263A
JPS60136263A JP58243129A JP24312983A JPS60136263A JP S60136263 A JPS60136263 A JP S60136263A JP 58243129 A JP58243129 A JP 58243129A JP 24312983 A JP24312983 A JP 24312983A JP S60136263 A JPS60136263 A JP S60136263A
Authority
JP
Japan
Prior art keywords
wall
substrate
film portion
metal film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58243129A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310588B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Ishii
哲夫 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58243129A priority Critical patent/JPS60136263A/ja
Publication of JPS60136263A publication Critical patent/JPS60136263A/ja
Publication of JPS6310588B2 publication Critical patent/JPS6310588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58243129A 1983-12-24 1983-12-24 半導体装置の製造方法 Granted JPS60136263A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243129A JPS60136263A (ja) 1983-12-24 1983-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243129A JPS60136263A (ja) 1983-12-24 1983-12-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60136263A true JPS60136263A (ja) 1985-07-19
JPS6310588B2 JPS6310588B2 (enrdf_load_stackoverflow) 1988-03-08

Family

ID=17099230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243129A Granted JPS60136263A (ja) 1983-12-24 1983-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60136263A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143674A (ja) * 1983-12-29 1985-07-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH02253632A (ja) * 1989-03-27 1990-10-12 Matsushita Electric Ind Co Ltd 電界効果型トランジスタの製造方法
JPH04188635A (ja) * 1990-11-19 1992-07-07 Nec Corp 半導体装置の製造方法
US5994728A (en) * 1995-11-15 1999-11-30 Matsushita Electronics Corporation Field effect transistor and method for producing the same
US10840488B2 (en) 2015-12-16 2020-11-17 Volvo Truck Corporation Battery fixing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143674A (ja) * 1983-12-29 1985-07-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH02253632A (ja) * 1989-03-27 1990-10-12 Matsushita Electric Ind Co Ltd 電界効果型トランジスタの製造方法
JPH04188635A (ja) * 1990-11-19 1992-07-07 Nec Corp 半導体装置の製造方法
US5994728A (en) * 1995-11-15 1999-11-30 Matsushita Electronics Corporation Field effect transistor and method for producing the same
US10840488B2 (en) 2015-12-16 2020-11-17 Volvo Truck Corporation Battery fixing device

Also Published As

Publication number Publication date
JPS6310588B2 (enrdf_load_stackoverflow) 1988-03-08

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