JPS6012701A - 厚膜型正特性半導体素子の製造方法 - Google Patents
厚膜型正特性半導体素子の製造方法Info
- Publication number
- JPS6012701A JPS6012701A JP12050383A JP12050383A JPS6012701A JP S6012701 A JPS6012701 A JP S6012701A JP 12050383 A JP12050383 A JP 12050383A JP 12050383 A JP12050383 A JP 12050383A JP S6012701 A JPS6012701 A JP S6012701A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- thick film
- positive temperature
- semiconductor element
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 12
- 239000002482 conductive additive Substances 0.000 description 7
- 229910002113 barium titanate Inorganic materials 0.000 description 6
- 229910009365 YSi2 Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 101000717877 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S11-A Proteins 0.000 description 2
- 101000717881 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S11-B Proteins 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12050383A JPS6012701A (ja) | 1983-07-01 | 1983-07-01 | 厚膜型正特性半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12050383A JPS6012701A (ja) | 1983-07-01 | 1983-07-01 | 厚膜型正特性半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6012701A true JPS6012701A (ja) | 1985-01-23 |
JPH04364B2 JPH04364B2 (enrdf_load_stackoverflow) | 1992-01-07 |
Family
ID=14787804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12050383A Granted JPS6012701A (ja) | 1983-07-01 | 1983-07-01 | 厚膜型正特性半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6012701A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6890788B2 (ja) | 2015-12-25 | 2021-06-18 | 国立大学法人東京工業大学 | 遷移金属担持金属間化合物、担持金属触媒、及びアンモニアの製造方法 |
-
1983
- 1983-07-01 JP JP12050383A patent/JPS6012701A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH04364B2 (enrdf_load_stackoverflow) | 1992-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6012701A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS61101008A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6012702A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6158209A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60206102A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60261109A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60261105A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6158208A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS59111302A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPH0534807B2 (enrdf_load_stackoverflow) | ||
JPS6158210A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS61101006A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS61101007A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPH0558244B2 (enrdf_load_stackoverflow) | ||
JPS6158207A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6064403A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6012703A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60206103A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60206104A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPH04565B2 (enrdf_load_stackoverflow) | ||
JPS61101004A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS60260103A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPS6012705A (ja) | 厚膜型正特性半導体素子の製造方法 | |
JPH0534805B2 (enrdf_load_stackoverflow) | ||
JPH04564B2 (enrdf_load_stackoverflow) |