JPS60126834A - イオンビーム加工装置 - Google Patents

イオンビーム加工装置

Info

Publication number
JPS60126834A
JPS60126834A JP23431883A JP23431883A JPS60126834A JP S60126834 A JPS60126834 A JP S60126834A JP 23431883 A JP23431883 A JP 23431883A JP 23431883 A JP23431883 A JP 23431883A JP S60126834 A JPS60126834 A JP S60126834A
Authority
JP
Japan
Prior art keywords
ion beam
processing
processed
target
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23431883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512851B2 (enrdf_load_stackoverflow
Inventor
Akira Shimase
朗 嶋瀬
Hiroshi Yamaguchi
博司 山口
Hideshi Kadooka
門岡　英志
Satoshi Haraichi
聡 原市
Takeoki Miyauchi
宮内　建興
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP23431883A priority Critical patent/JPS60126834A/ja
Publication of JPS60126834A publication Critical patent/JPS60126834A/ja
Publication of JPH0512851B2 publication Critical patent/JPH0512851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
JP23431883A 1983-12-14 1983-12-14 イオンビーム加工装置 Granted JPS60126834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23431883A JPS60126834A (ja) 1983-12-14 1983-12-14 イオンビーム加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23431883A JPS60126834A (ja) 1983-12-14 1983-12-14 イオンビーム加工装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4242856A Division JPH0771755B2 (ja) 1992-09-11 1992-09-11 イオンビーム加工装置

Publications (2)

Publication Number Publication Date
JPS60126834A true JPS60126834A (ja) 1985-07-06
JPH0512851B2 JPH0512851B2 (enrdf_load_stackoverflow) 1993-02-19

Family

ID=16969126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23431883A Granted JPS60126834A (ja) 1983-12-14 1983-12-14 イオンビーム加工装置

Country Status (1)

Country Link
JP (1) JPS60126834A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188261A (ja) * 1984-10-08 1986-05-06 Seiko Instr & Electronics Ltd イオンビ−ムによるマスクリペア−装置
JPS62210624A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd イオンビ−ム加工方法および装置
JPH01316931A (ja) * 1988-06-16 1989-12-21 Nippon Telegr & Teleph Corp <Ntt> 微細パターン形成方法
US6278578B1 (en) 1990-04-16 2001-08-21 Hitachi, Ltd. Narrow track thin film head having a focused ion beam etched air bearing surface
US6521902B1 (en) 2000-08-15 2003-02-18 International Business Machines Corporation Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
WO2012132494A1 (ja) * 2011-03-31 2012-10-04 株式会社日立ハイテクノロジーズ イオンビーム装置および加工方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138030A (ja) * 1982-02-10 1983-08-16 Matsushita Electric Ind Co Ltd イオンビ−ムエツチング装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138030A (ja) * 1982-02-10 1983-08-16 Matsushita Electric Ind Co Ltd イオンビ−ムエツチング装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188261A (ja) * 1984-10-08 1986-05-06 Seiko Instr & Electronics Ltd イオンビ−ムによるマスクリペア−装置
JPS62210624A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd イオンビ−ム加工方法および装置
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
JPH01316931A (ja) * 1988-06-16 1989-12-21 Nippon Telegr & Teleph Corp <Ntt> 微細パターン形成方法
US6538844B2 (en) 1990-04-16 2003-03-25 Hitachi, Ltd. Method of fabricating a magnetic head by focused ion beam etching
US6307707B1 (en) 1990-04-16 2001-10-23 Hitachi, Ltd. Narrow track thin film head including magnetic poles machined by focused ion beam etching
US6665141B2 (en) 1990-04-16 2003-12-16 Hitachi, Ltd. Magnetic head having track width defined by trench portions filled with magnetic shield material
US6278578B1 (en) 1990-04-16 2001-08-21 Hitachi, Ltd. Narrow track thin film head having a focused ion beam etched air bearing surface
US6839200B2 (en) 1990-04-16 2005-01-04 Hitachi, Ltd. Combination perpendicular magnetic head having shield material formed at both ends of an upper pole of a write element
US6521902B1 (en) 2000-08-15 2003-02-18 International Business Machines Corporation Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling
WO2012132494A1 (ja) * 2011-03-31 2012-10-04 株式会社日立ハイテクノロジーズ イオンビーム装置および加工方法
JP2012212616A (ja) * 2011-03-31 2012-11-01 Hitachi High-Technologies Corp イオンビーム装置および加工方法
US9111721B2 (en) 2011-03-31 2015-08-18 Hitachi High-Technologies Corporation Ion beam device and machining method

Also Published As

Publication number Publication date
JPH0512851B2 (enrdf_load_stackoverflow) 1993-02-19

Similar Documents

Publication Publication Date Title
EP0298495B1 (en) Method and apparatus for correcting defects of x-ray mask
JP2003215067A (ja) 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP3544438B2 (ja) イオンビームによる加工装置
US6512227B2 (en) Method and apparatus for inspecting patterns of a semiconductor device with an electron beam
JP2926132B1 (ja) 集束イオンビームによる二次イオン像観察方法
JPS60126834A (ja) イオンビーム加工装置
JPS59208830A (ja) イオンビ−ム加工方法およびその装置
JPS60136315A (ja) マイクロイオンビ−ム加工方法およびその装置
JP2003229462A (ja) 回路パターンの検査装置
JP2672808B2 (ja) イオンビーム加工装置
JPH0771755B2 (ja) イオンビーム加工装置
JP3060613B2 (ja) 集束イオンビーム装置、及び集束イオンビームを用いた断面加工方法
JPS61245164A (ja) パタ−ン修正装置
JPH0771754B2 (ja) イオンビーム加工方法
JPH11307417A (ja) 集束イオンビームによる断面加工観察方法
JP3240730B2 (ja) イオンビーム装置、及びイオンビーム装置による加工条件表示方法
JPS61224319A (ja) イオンビ−ム加工方法およびその装置
JP2002270128A (ja) 集束イオンビーム装置およびそれを用いた加工方法
JPH07136781A (ja) 加工位置指定方法
JP2813359B2 (ja) 電子ビーム露光装置
JP2582152B2 (ja) 偏向系描画フィールドの歪補正方法
JPH06132187A (ja) イオンビーム加工装置
JPH0429052B2 (enrdf_load_stackoverflow)
JPH05144900A (ja) 表面加工断面観察装置
JPH06318443A (ja) イオンビーム装置