JPS60122799A - 半導体ウエハの熱処理方法 - Google Patents

半導体ウエハの熱処理方法

Info

Publication number
JPS60122799A
JPS60122799A JP10458184A JP10458184A JPS60122799A JP S60122799 A JPS60122799 A JP S60122799A JP 10458184 A JP10458184 A JP 10458184A JP 10458184 A JP10458184 A JP 10458184A JP S60122799 A JPS60122799 A JP S60122799A
Authority
JP
Japan
Prior art keywords
box
oxygen
core tube
heater
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10458184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0372599B2 (enrdf_load_stackoverflow
Inventor
Tamotsu Sasaki
保 佐々木
Masamoto Akeyama
明山　正元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10458184A priority Critical patent/JPS60122799A/ja
Publication of JPS60122799A publication Critical patent/JPS60122799A/ja
Publication of JPH0372599B2 publication Critical patent/JPH0372599B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10458184A 1984-05-25 1984-05-25 半導体ウエハの熱処理方法 Granted JPS60122799A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10458184A JPS60122799A (ja) 1984-05-25 1984-05-25 半導体ウエハの熱処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10458184A JPS60122799A (ja) 1984-05-25 1984-05-25 半導体ウエハの熱処理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15986078A Division JPS5590405A (en) 1978-12-27 1978-12-27 Forming device for wet oxygen and heat treatment furnace provided with the said device

Publications (2)

Publication Number Publication Date
JPS60122799A true JPS60122799A (ja) 1985-07-01
JPH0372599B2 JPH0372599B2 (enrdf_load_stackoverflow) 1991-11-19

Family

ID=14384398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10458184A Granted JPS60122799A (ja) 1984-05-25 1984-05-25 半導体ウエハの熱処理方法

Country Status (1)

Country Link
JP (1) JPS60122799A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906595A (en) * 1986-12-08 1990-03-06 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372572A (en) * 1976-12-10 1978-06-28 Mitsubishi Electric Corp Manufacturing device for semiconductor device
JPS53123667A (en) * 1977-04-04 1978-10-28 Mitsubishi Electric Corp Generator for semiconuctor oxidized film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372572A (en) * 1976-12-10 1978-06-28 Mitsubishi Electric Corp Manufacturing device for semiconductor device
JPS53123667A (en) * 1977-04-04 1978-10-28 Mitsubishi Electric Corp Generator for semiconuctor oxidized film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906595A (en) * 1986-12-08 1990-03-06 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions

Also Published As

Publication number Publication date
JPH0372599B2 (enrdf_load_stackoverflow) 1991-11-19

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