JPS60106163A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60106163A JPS60106163A JP58214494A JP21449483A JPS60106163A JP S60106163 A JPS60106163 A JP S60106163A JP 58214494 A JP58214494 A JP 58214494A JP 21449483 A JP21449483 A JP 21449483A JP S60106163 A JPS60106163 A JP S60106163A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- film
- electrode
- cell
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214494A JPS60106163A (ja) | 1983-11-15 | 1983-11-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214494A JPS60106163A (ja) | 1983-11-15 | 1983-11-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60106163A true JPS60106163A (ja) | 1985-06-11 |
| JPH0363828B2 JPH0363828B2 (enrdf_load_stackoverflow) | 1991-10-02 |
Family
ID=16656632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58214494A Granted JPS60106163A (ja) | 1983-11-15 | 1983-11-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60106163A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336922A (en) * | 1990-07-31 | 1994-08-09 | Nec Corporation | Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices |
| US5604382A (en) * | 1993-11-25 | 1997-02-18 | Nec Corporation | Semiconductor device with pillar-shaped contact layer |
| EP0764974A1 (en) * | 1990-03-08 | 1997-03-26 | Fujitsu Limited | Layer structure having contact hole and method of producing the same |
-
1983
- 1983-11-15 JP JP58214494A patent/JPS60106163A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764974A1 (en) * | 1990-03-08 | 1997-03-26 | Fujitsu Limited | Layer structure having contact hole and method of producing the same |
| US5705420A (en) * | 1990-03-08 | 1998-01-06 | Fujitsu Limited | Method of producing a fin-shaped capacitor |
| US6144058A (en) * | 1990-03-08 | 2000-11-07 | Fujitsu Limited | Layer structure having contact hole, method of producing the same, fin-shaped capacitor using the layer structure, method of producing the fin-shaped capacitor and dynamic random access memory having the fin-shaped capacitor |
| US6528369B1 (en) | 1990-03-08 | 2003-03-04 | Fujitsu Limited | Layer structure having contact hole and method of producing same |
| US5336922A (en) * | 1990-07-31 | 1994-08-09 | Nec Corporation | Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices |
| US5411912A (en) * | 1990-07-31 | 1995-05-02 | Nec Corporation | Method of making a semiconductor device comprising lower and upper silicon layers as capacitor electrodes |
| US5604382A (en) * | 1993-11-25 | 1997-02-18 | Nec Corporation | Semiconductor device with pillar-shaped contact layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363828B2 (enrdf_load_stackoverflow) | 1991-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |