JPS5984580A - 超短ゲ−ト電界効果トランジスタ - Google Patents

超短ゲ−ト電界効果トランジスタ

Info

Publication number
JPS5984580A
JPS5984580A JP57194582A JP19458282A JPS5984580A JP S5984580 A JPS5984580 A JP S5984580A JP 57194582 A JP57194582 A JP 57194582A JP 19458282 A JP19458282 A JP 19458282A JP S5984580 A JPS5984580 A JP S5984580A
Authority
JP
Japan
Prior art keywords
semiconductor
type
semiconductors
mentioned
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57194582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255316B2 (enExample
Inventor
Takayuki Sugata
孝之 菅田
Masamichi Omori
大森　正道
Yoshinori Kato
加藤　嘉則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57194582A priority Critical patent/JPS5984580A/ja
Publication of JPS5984580A publication Critical patent/JPS5984580A/ja
Publication of JPS6255316B2 publication Critical patent/JPS6255316B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57194582A 1982-11-08 1982-11-08 超短ゲ−ト電界効果トランジスタ Granted JPS5984580A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57194582A JPS5984580A (ja) 1982-11-08 1982-11-08 超短ゲ−ト電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57194582A JPS5984580A (ja) 1982-11-08 1982-11-08 超短ゲ−ト電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5984580A true JPS5984580A (ja) 1984-05-16
JPS6255316B2 JPS6255316B2 (enExample) 1987-11-19

Family

ID=16326938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57194582A Granted JPS5984580A (ja) 1982-11-08 1982-11-08 超短ゲ−ト電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5984580A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771324A (en) * 1982-09-24 1988-09-13 Fujitsu Limited Heterojunction field effect device having an implanted region within a device channel
US5444016A (en) * 1993-06-25 1995-08-22 Abrokwah; Jonathan K. Method of making ohmic contacts to a complementary III-V semiconductor device
US5606184A (en) * 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771324A (en) * 1982-09-24 1988-09-13 Fujitsu Limited Heterojunction field effect device having an implanted region within a device channel
US5444016A (en) * 1993-06-25 1995-08-22 Abrokwah; Jonathan K. Method of making ohmic contacts to a complementary III-V semiconductor device
US5606184A (en) * 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making

Also Published As

Publication number Publication date
JPS6255316B2 (enExample) 1987-11-19

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