JPS5976437A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5976437A
JPS5976437A JP57187918A JP18791882A JPS5976437A JP S5976437 A JPS5976437 A JP S5976437A JP 57187918 A JP57187918 A JP 57187918A JP 18791882 A JP18791882 A JP 18791882A JP S5976437 A JPS5976437 A JP S5976437A
Authority
JP
Japan
Prior art keywords
substrate
pad
layer
gate
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57187918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641050B2 (enExample
Inventor
Satoru Shibata
悟 柴田
Minoru Matsumoto
稔 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57187918A priority Critical patent/JPS5976437A/ja
Publication of JPS5976437A publication Critical patent/JPS5976437A/ja
Publication of JPS641050B2 publication Critical patent/JPS641050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/90—
    • H10W72/923—
    • H10W72/932—
    • H10W72/952—

Landscapes

  • Wire Bonding (AREA)
JP57187918A 1982-10-26 1982-10-26 半導体装置 Granted JPS5976437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57187918A JPS5976437A (ja) 1982-10-26 1982-10-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57187918A JPS5976437A (ja) 1982-10-26 1982-10-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS5976437A true JPS5976437A (ja) 1984-05-01
JPS641050B2 JPS641050B2 (enExample) 1989-01-10

Family

ID=16214479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57187918A Granted JPS5976437A (ja) 1982-10-26 1982-10-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS5976437A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871687A (en) * 1985-01-28 1989-10-03 Telettra Telefonia Elettronica E Radio S.P.A. Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like
JP2015010931A (ja) * 2013-06-28 2015-01-19 富士電機株式会社 半導体圧力センサ装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871687A (en) * 1985-01-28 1989-10-03 Telettra Telefonia Elettronica E Radio S.P.A. Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like
JP2015010931A (ja) * 2013-06-28 2015-01-19 富士電機株式会社 半導体圧力センサ装置およびその製造方法

Also Published As

Publication number Publication date
JPS641050B2 (enExample) 1989-01-10

Similar Documents

Publication Publication Date Title
JP3210657B2 (ja) ヘテロ接合バイポーラトランジスタ
US4695869A (en) GAAS semiconductor device
US5260603A (en) Electrode structure of semiconductor device for use in GaAs compound substrate
JPH05275373A (ja) 化合物半導体装置の製造方法
JPS5976437A (ja) 半導体装置
GB1196834A (en) Improvement of Electrode Structure in a Semiconductor Device.
JPS5842631B2 (ja) 接合ゲ−ト型電界効果トランジスタの製造方法
JPS6016463A (ja) オ−ム性電極
JPH036817A (ja) 半導体素子の多層電極の製造方法
JPH02189936A (ja) 半導体装置の製造方法
JPS63160274A (ja) 砒化ガリウム半導体装置
JPS63318145A (ja) 半導体装置の製造方法
JPH0439228B2 (enExample)
JPS60211974A (ja) 半導体素子
JPS5810823A (ja) 半導体装置の製造方法
JPS62122255A (ja) 化合物半導体装置
JPS62229955A (ja) 半導体装置
JPS6077469A (ja) 半導体装置の製造方法
JPH0845966A (ja) 砒化ガリウム半導体装置
JPS59126676A (ja) 電界効果型トランジスタ
JPH0491441A (ja) 電界効果トランジスタの製造方法
JPH05152338A (ja) 化合物半導体装置
JPH05299634A (ja) 化合物半導体素子およびその製法
JPS60200570A (ja) 電子装置
JPH04364032A (ja) 化合物半導体装置の製造方法