JPS5972131A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5972131A
JPS5972131A JP18218082A JP18218082A JPS5972131A JP S5972131 A JPS5972131 A JP S5972131A JP 18218082 A JP18218082 A JP 18218082A JP 18218082 A JP18218082 A JP 18218082A JP S5972131 A JPS5972131 A JP S5972131A
Authority
JP
Japan
Prior art keywords
metal
selectively
silicon
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18218082A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410219B2 (enrdf_load_stackoverflow
Inventor
Mitsutoshi Furuyama
古山　充利
Takahiko Moriya
守屋　孝彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18218082A priority Critical patent/JPS5972131A/ja
Publication of JPS5972131A publication Critical patent/JPS5972131A/ja
Publication of JPH0410219B2 publication Critical patent/JPH0410219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP18218082A 1982-10-19 1982-10-19 半導体装置の製造方法 Granted JPS5972131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18218082A JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18218082A JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5972131A true JPS5972131A (ja) 1984-04-24
JPH0410219B2 JPH0410219B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=16113735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18218082A Granted JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5972131A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119750A (ja) * 1983-12-02 1985-06-27 Hitachi Ltd 半導体装置の製造方法
JPS60245149A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61128521A (ja) * 1984-11-27 1986-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61203671A (ja) * 1985-03-06 1986-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63250463A (ja) * 1987-04-08 1988-10-18 Ulvac Corp 金属薄膜形成方法
JPH02213127A (ja) * 1988-12-09 1990-08-24 American Teleph & Telegr Co <Att> 半導体集積回路デバイス金属部形成

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119750A (ja) * 1983-12-02 1985-06-27 Hitachi Ltd 半導体装置の製造方法
JPS60245149A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61128521A (ja) * 1984-11-27 1986-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61203671A (ja) * 1985-03-06 1986-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63250463A (ja) * 1987-04-08 1988-10-18 Ulvac Corp 金属薄膜形成方法
JPH02213127A (ja) * 1988-12-09 1990-08-24 American Teleph & Telegr Co <Att> 半導体集積回路デバイス金属部形成

Also Published As

Publication number Publication date
JPH0410219B2 (enrdf_load_stackoverflow) 1992-02-24

Similar Documents

Publication Publication Date Title
US4617087A (en) Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
US5175017A (en) Method of forming metal or metal silicide film
JPH1064902A (ja) アルミニウム材料の成膜方法及び成膜装置
JPH05304213A (ja) 半導体装置の製造方法
JPH06163435A (ja) 半導体ウェファへのケイ化チタンの化学蒸着方法
JPS58177462A (ja) 高融点金属ケイ化物構造層の選択析出方法
TW202208660A (zh) 用於改善介電選擇性的無氟鎢ald
JPS5972132A (ja) 金属及び金属シリサイド膜の形成方法
JPH0548935B2 (enrdf_load_stackoverflow)
JPS5972131A (ja) 半導体装置の製造方法
JPS60117719A (ja) 半導体装置の製造方法
JPH05129231A (ja) 電極配線
US12305278B2 (en) Method of reducing titanium nitride etching during tungsten film formation
JP3246046B2 (ja) 高融点金属膜の堆積方法
JPH05121648A (ja) プレーナ誘電体の作製方法
JPH03214734A (ja) 窒化チタン膜の形成方法
KR100543653B1 (ko) 반도체 소자의 금속 배선 형성 방법
JPH04120725A (ja) 配線の形成方法
JP3027987B2 (ja) 金属膜又は金属シリサイド膜の形成方法及び半導体装置の製造方法
JP2000040675A (ja) 半導体装置の製造方法およびそれによる半導体装置
JPH05129300A (ja) 金属又は金属シリサイドの薄膜形成方法及び半導体装置の製造方法
JPH02188921A (ja) 高融点金属多層膜形成法
JPH03191064A (ja) 高融点金属膜の形成方法
JPS6155776B2 (enrdf_load_stackoverflow)
JPH07183250A (ja) コンタクト形成方法