JPS5958861A - 半導体メモリ装置 - Google Patents
半導体メモリ装置Info
- Publication number
- JPS5958861A JPS5958861A JP57171417A JP17141782A JPS5958861A JP S5958861 A JPS5958861 A JP S5958861A JP 57171417 A JP57171417 A JP 57171417A JP 17141782 A JP17141782 A JP 17141782A JP S5958861 A JPS5958861 A JP S5958861A
- Authority
- JP
- Japan
- Prior art keywords
- write
- control gate
- voltage
- transistor
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000001514 detection method Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 238000012795 verification Methods 0.000 description 8
- 239000000872 buffer Substances 0.000 description 5
- 230000001186 cumulative effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 208000007848 Alcoholism Diseases 0.000 description 1
- 235000014820 Galium aparine Nutrition 0.000 description 1
- 240000005702 Galium aparine Species 0.000 description 1
- 241001348514 Hamus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 201000007930 alcohol dependence Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171417A JPS5958861A (ja) | 1982-09-28 | 1982-09-28 | 半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171417A JPS5958861A (ja) | 1982-09-28 | 1982-09-28 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5958861A true JPS5958861A (ja) | 1984-04-04 |
| JPH0142080B2 JPH0142080B2 (enrdf_load_stackoverflow) | 1989-09-08 |
Family
ID=15922745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57171417A Granted JPS5958861A (ja) | 1982-09-28 | 1982-09-28 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5958861A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63291297A (ja) * | 1987-05-22 | 1988-11-29 | Nec Corp | 書込み及び消去可能な不揮発性メモリ− |
| JPH01173494A (ja) * | 1987-12-28 | 1989-07-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JPH025297A (ja) * | 1988-01-12 | 1990-01-10 | Intel Corp | 電気的に消去可能で電気的にプログラム可能なリード・オンリ・メモリ |
-
1982
- 1982-09-28 JP JP57171417A patent/JPS5958861A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63291297A (ja) * | 1987-05-22 | 1988-11-29 | Nec Corp | 書込み及び消去可能な不揮発性メモリ− |
| JPH01173494A (ja) * | 1987-12-28 | 1989-07-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JPH025297A (ja) * | 1988-01-12 | 1990-01-10 | Intel Corp | 電気的に消去可能で電気的にプログラム可能なリード・オンリ・メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0142080B2 (enrdf_load_stackoverflow) | 1989-09-08 |
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