JPS5956740A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5956740A
JPS5956740A JP16713782A JP16713782A JPS5956740A JP S5956740 A JPS5956740 A JP S5956740A JP 16713782 A JP16713782 A JP 16713782A JP 16713782 A JP16713782 A JP 16713782A JP S5956740 A JPS5956740 A JP S5956740A
Authority
JP
Japan
Prior art keywords
isolation region
film
collector
element isolation
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16713782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05849B2 (ko
Inventor
Hiroshi Goto
広志 後藤
Ryoji Abe
良司 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16713782A priority Critical patent/JPS5956740A/ja
Publication of JPS5956740A publication Critical patent/JPS5956740A/ja
Publication of JPH05849B2 publication Critical patent/JPH05849B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP16713782A 1982-09-24 1982-09-24 半導体装置の製造方法 Granted JPS5956740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16713782A JPS5956740A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16713782A JPS5956740A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5956740A true JPS5956740A (ja) 1984-04-02
JPH05849B2 JPH05849B2 (ko) 1993-01-06

Family

ID=15844107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16713782A Granted JPS5956740A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5956740A (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116546A (ja) * 1984-06-14 1986-01-24 コミツサレ・ア・レナジイ・アトミツク 絶縁溝に対する局部区域酸化物の自動位置決め方法
JPS6158237A (ja) * 1984-08-29 1986-03-25 Toshiba Corp パタ−ン形成方法
JPS61263225A (ja) * 1985-05-17 1986-11-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH01138719A (ja) * 1987-11-25 1989-05-31 Nec Corp 半導体装置の製造方法
JPH07161806A (ja) * 1993-12-02 1995-06-23 Nec Corp 半導体装置の製造方法
JPH07211706A (ja) * 1995-01-23 1995-08-11 Toshiba Corp パターン形成方法
US7224038B2 (en) 2000-11-13 2007-05-29 Sanyo Electric Co., Ltd. Semiconductor device having element isolation trench and method of fabricating the same
JP2011071304A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体装置およびその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116546A (ja) * 1984-06-14 1986-01-24 コミツサレ・ア・レナジイ・アトミツク 絶縁溝に対する局部区域酸化物の自動位置決め方法
JPS6158237A (ja) * 1984-08-29 1986-03-25 Toshiba Corp パタ−ン形成方法
JPS61263225A (ja) * 1985-05-17 1986-11-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH01138719A (ja) * 1987-11-25 1989-05-31 Nec Corp 半導体装置の製造方法
JPH07161806A (ja) * 1993-12-02 1995-06-23 Nec Corp 半導体装置の製造方法
JPH07211706A (ja) * 1995-01-23 1995-08-11 Toshiba Corp パターン形成方法
US7224038B2 (en) 2000-11-13 2007-05-29 Sanyo Electric Co., Ltd. Semiconductor device having element isolation trench and method of fabricating the same
JP2011071304A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体装置およびその製造方法
US8338908B2 (en) 2009-09-25 2012-12-25 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPH05849B2 (ko) 1993-01-06

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