JPS5956737A - 半導体素子のボンデイング用Ａｌ線 - Google Patents

半導体素子のボンデイング用Ａｌ線

Info

Publication number
JPS5956737A
JPS5956737A JP57167799A JP16779982A JPS5956737A JP S5956737 A JPS5956737 A JP S5956737A JP 57167799 A JP57167799 A JP 57167799A JP 16779982 A JP16779982 A JP 16779982A JP S5956737 A JPS5956737 A JP S5956737A
Authority
JP
Japan
Prior art keywords
lead wire
elements
bonding
amount
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57167799A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0216579B2 (enExample
Inventor
Yasuo Fukui
福井　康夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP57167799A priority Critical patent/JPS5956737A/ja
Publication of JPS5956737A publication Critical patent/JPS5956737A/ja
Publication of JPH0216579B2 publication Critical patent/JPH0216579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
JP57167799A 1982-09-25 1982-09-25 半導体素子のボンデイング用Ａｌ線 Granted JPS5956737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57167799A JPS5956737A (ja) 1982-09-25 1982-09-25 半導体素子のボンデイング用Ａｌ線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167799A JPS5956737A (ja) 1982-09-25 1982-09-25 半導体素子のボンデイング用Ａｌ線

Publications (2)

Publication Number Publication Date
JPS5956737A true JPS5956737A (ja) 1984-04-02
JPH0216579B2 JPH0216579B2 (enExample) 1990-04-17

Family

ID=15856317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57167799A Granted JPS5956737A (ja) 1982-09-25 1982-09-25 半導体素子のボンデイング用Ａｌ線

Country Status (1)

Country Link
JP (1) JPS5956737A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602848U (ja) * 1983-06-17 1985-01-10 三洋電機株式会社 半導体装置
JPS6252939A (ja) * 1985-08-31 1987-03-07 Nec Kansai Ltd 半導体装置
JPS62218537A (ja) * 1986-03-19 1987-09-25 Nippon Light Metal Co Ltd アルミニウム細線
JPH04184945A (ja) * 1990-11-20 1992-07-01 Hitachi Chem Co Ltd 半導体装置
US5704494A (en) * 1995-06-16 1998-01-06 Nihon Plast Co., Ltd. Disc holder
JP2008311383A (ja) * 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
CN103789579A (zh) * 2014-02-21 2014-05-14 汕头市骏码凯撒有限公司 一种大直径键合铝线及其制造方法
KR20140135105A (ko) 2013-05-15 2014-11-25 타나카 덴시 코오교오 카부시키가이샤 내식성 알루미늄 합금 본딩 와이어
WO2025028382A1 (ja) * 2023-07-31 2025-02-06 田中電子工業株式会社 アルミニウム配線材及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954253A (ja) * 1982-09-22 1984-03-29 Furukawa Tokushu Kinzoku Kogyo Kk 半導体素子のボンデイング用アルミニウム線材

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954253A (ja) * 1982-09-22 1984-03-29 Furukawa Tokushu Kinzoku Kogyo Kk 半導体素子のボンデイング用アルミニウム線材

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602848U (ja) * 1983-06-17 1985-01-10 三洋電機株式会社 半導体装置
JPS6252939A (ja) * 1985-08-31 1987-03-07 Nec Kansai Ltd 半導体装置
JPS62218537A (ja) * 1986-03-19 1987-09-25 Nippon Light Metal Co Ltd アルミニウム細線
JPH04184945A (ja) * 1990-11-20 1992-07-01 Hitachi Chem Co Ltd 半導体装置
US5704494A (en) * 1995-06-16 1998-01-06 Nihon Plast Co., Ltd. Disc holder
JP2008311383A (ja) * 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
KR20140135105A (ko) 2013-05-15 2014-11-25 타나카 덴시 코오교오 카부시키가이샤 내식성 알루미늄 합금 본딩 와이어
CN103789579A (zh) * 2014-02-21 2014-05-14 汕头市骏码凯撒有限公司 一种大直径键合铝线及其制造方法
CN103789579B (zh) * 2014-02-21 2015-03-11 汕头市骏码凯撒有限公司 一种大直径键合铝线及其制造方法
WO2025028382A1 (ja) * 2023-07-31 2025-02-06 田中電子工業株式会社 アルミニウム配線材及びその製造方法

Also Published As

Publication number Publication date
JPH0216579B2 (enExample) 1990-04-17

Similar Documents

Publication Publication Date Title
JPH10144718A (ja) スズ基鉛フリーハンダワイヤー及びボール
JP6062070B2 (ja) Ｐｂを含まない半田合金
JPS5956737A (ja) 半導体素子のボンデイング用Ａｌ線
WO2014203425A1 (ja) Ｚｎ系鉛フリーはんだおよび半導体パワーモジュール
CN103476541B (zh) 无铅软钎料合金
CN106811630A (zh) 一种铝合金及其制备方法和应用
JP2002105571A (ja) 熱伝導性に優れたヒートシンク用アルミニウム合金材
US4747889A (en) Interconnecting wire for semiconductor devices
JPH0216580B2 (enExample)
JPH0291944A (ja) 金バンプ用金合金細線
JP4769469B2 (ja) Ａｕ−Ｓｎ系ろう材による接合方法
KR20250140630A (ko) 땜납 합금, 땜납 볼, 땜납 페이스트 및 땜납 조인트
JPS58210140A (ja) 伝導用耐熱銅合金
JP2797846B2 (ja) 樹脂封止型半導体装置のＣｕ合金製リードフレーム材
JP3090548B2 (ja) 半導体素子用ボンディング線
JP3379380B2 (ja) 高強度・高導電性銅合金
JPH08310877A (ja) セラミックス用ろう材
GB2287716A (en) Copper alloy suited for electrical components and having high strength and high electric conductivity
JPS5961939A (ja) 半導体素子のボンデイング用Ａｌ線
JPS60171750A (ja) 半導体装置
JPH0618860B2 (ja) 半導体封止用樹脂組成物
JPH11243171A (ja) リードフレーム用銅合金
JPS60127924A (ja) ワイヤカツト放電加工用電極線およびその製造方法
JP2519400B2 (ja) 電子部品用リ―ド端子
CN101525703A (zh) 一种半导体器件铜焊线及其制备工艺