JPS5955062A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5955062A JPS5955062A JP57166106A JP16610682A JPS5955062A JP S5955062 A JPS5955062 A JP S5955062A JP 57166106 A JP57166106 A JP 57166106A JP 16610682 A JP16610682 A JP 16610682A JP S5955062 A JPS5955062 A JP S5955062A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- capacitor
- dielectric
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57166106A JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57166106A JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5955062A true JPS5955062A (ja) | 1984-03-29 |
JPH0311551B2 JPH0311551B2 (zh) | 1991-02-18 |
Family
ID=15825123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57166106A Granted JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5955062A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61207048A (ja) * | 1985-03-12 | 1986-09-13 | Seiko Instr & Electronics Ltd | 半導体装置 |
JPH0250476A (ja) * | 1988-08-12 | 1990-02-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6027977A (en) * | 1997-05-14 | 2000-02-22 | Nec Corporation | Method of fabricating semiconductor device with MIS structure |
US8633074B2 (en) * | 2008-09-17 | 2014-01-21 | Spansion Llc | Electrically programmable and erasable memory device and method of fabrication thereof |
-
1982
- 1982-09-24 JP JP57166106A patent/JPS5955062A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61207048A (ja) * | 1985-03-12 | 1986-09-13 | Seiko Instr & Electronics Ltd | 半導体装置 |
JPH0250476A (ja) * | 1988-08-12 | 1990-02-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6027977A (en) * | 1997-05-14 | 2000-02-22 | Nec Corporation | Method of fabricating semiconductor device with MIS structure |
US8633074B2 (en) * | 2008-09-17 | 2014-01-21 | Spansion Llc | Electrically programmable and erasable memory device and method of fabrication thereof |
US9425325B2 (en) | 2008-09-17 | 2016-08-23 | Cypress Semiconductor Corporation | Electrically programmable and eraseable memory device |
Also Published As
Publication number | Publication date |
---|---|
JPH0311551B2 (zh) | 1991-02-18 |
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