JPH0311551B2 - - Google Patents
Info
- Publication number
- JPH0311551B2 JPH0311551B2 JP57166106A JP16610682A JPH0311551B2 JP H0311551 B2 JPH0311551 B2 JP H0311551B2 JP 57166106 A JP57166106 A JP 57166106A JP 16610682 A JP16610682 A JP 16610682A JP H0311551 B2 JPH0311551 B2 JP H0311551B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- capacitor
- dielectric
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 27
- -1 silicon oxy nitride Chemical class 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000015654 memory Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57166106A JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57166106A JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5955062A JPS5955062A (ja) | 1984-03-29 |
| JPH0311551B2 true JPH0311551B2 (zh) | 1991-02-18 |
Family
ID=15825123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57166106A Granted JPS5955062A (ja) | 1982-09-24 | 1982-09-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955062A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61207048A (ja) * | 1985-03-12 | 1986-09-13 | Seiko Instr & Electronics Ltd | 半導体装置 |
| JP2749072B2 (ja) * | 1988-08-12 | 1998-05-13 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| JPH10313114A (ja) * | 1997-05-14 | 1998-11-24 | Nec Corp | 半導体装置の製造方法 |
| US8633074B2 (en) | 2008-09-17 | 2014-01-21 | Spansion Llc | Electrically programmable and erasable memory device and method of fabrication thereof |
-
1982
- 1982-09-24 JP JP57166106A patent/JPS5955062A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5955062A (ja) | 1984-03-29 |
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