JPS5954283A - 半導体レ−ザ装置およびその製造方法 - Google Patents

半導体レ−ザ装置およびその製造方法

Info

Publication number
JPS5954283A
JPS5954283A JP16382582A JP16382582A JPS5954283A JP S5954283 A JPS5954283 A JP S5954283A JP 16382582 A JP16382582 A JP 16382582A JP 16382582 A JP16382582 A JP 16382582A JP S5954283 A JPS5954283 A JP S5954283A
Authority
JP
Japan
Prior art keywords
layer
type
conductivity type
optical waveguide
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16382582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354234B2 (enExample
Inventor
Jun Osawa
大沢　潤
Kenji Ikeda
健志 池田
Kazuhisa Takahashi
和久 高橋
Wataru Suzaki
須崎　渉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16382582A priority Critical patent/JPS5954283A/ja
Publication of JPS5954283A publication Critical patent/JPS5954283A/ja
Publication of JPS6354234B2 publication Critical patent/JPS6354234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP16382582A 1982-09-22 1982-09-22 半導体レ−ザ装置およびその製造方法 Granted JPS5954283A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16382582A JPS5954283A (ja) 1982-09-22 1982-09-22 半導体レ−ザ装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16382582A JPS5954283A (ja) 1982-09-22 1982-09-22 半導体レ−ザ装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS5954283A true JPS5954283A (ja) 1984-03-29
JPS6354234B2 JPS6354234B2 (enExample) 1988-10-27

Family

ID=15781447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16382582A Granted JPS5954283A (ja) 1982-09-22 1982-09-22 半導体レ−ザ装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS5954283A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200826B1 (en) * 1996-12-30 2001-03-13 Hyundai Electronics Industries Co., Ltd. Method of fabricating a reverse mesa ridge waveguide type laser diode
KR100458251B1 (ko) * 2002-10-25 2004-11-26 엘지전자 주식회사 화합물 반도체 레이저 다이오드

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200826B1 (en) * 1996-12-30 2001-03-13 Hyundai Electronics Industries Co., Ltd. Method of fabricating a reverse mesa ridge waveguide type laser diode
KR100458251B1 (ko) * 2002-10-25 2004-11-26 엘지전자 주식회사 화합물 반도체 레이저 다이오드

Also Published As

Publication number Publication date
JPS6354234B2 (enExample) 1988-10-27

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