JPS5939713A - シリコン薄膜及びその製造方法 - Google Patents
シリコン薄膜及びその製造方法Info
- Publication number
- JPS5939713A JPS5939713A JP14939982A JP14939982A JPS5939713A JP S5939713 A JPS5939713 A JP S5939713A JP 14939982 A JP14939982 A JP 14939982A JP 14939982 A JP14939982 A JP 14939982A JP S5939713 A JPS5939713 A JP S5939713A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- silicon
- grid
- silicon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14939982A JPS5939713A (ja) | 1982-08-29 | 1982-08-29 | シリコン薄膜及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14939982A JPS5939713A (ja) | 1982-08-29 | 1982-08-29 | シリコン薄膜及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5939713A true JPS5939713A (ja) | 1984-03-05 |
| JPS6367555B2 JPS6367555B2 (enExample) | 1988-12-26 |
Family
ID=15474277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14939982A Granted JPS5939713A (ja) | 1982-08-29 | 1982-08-29 | シリコン薄膜及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939713A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62111435A (ja) * | 1985-07-15 | 1987-05-22 | Hitachi Ltd | 低温プラズマによる成膜方法及び装置 |
| JPS6336522A (ja) * | 1986-07-30 | 1988-02-17 | Yoshihiro Hamakawa | 非晶質薄膜の形成方法 |
| JP2009155112A (ja) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | 多結晶薄膜の製造方法、複合ナノ結晶層の製造方法、電界放射型電子源、発光デバイス |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698820A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Preparation of amorphous semiconductor film |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
-
1982
- 1982-08-29 JP JP14939982A patent/JPS5939713A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698820A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Preparation of amorphous semiconductor film |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62111435A (ja) * | 1985-07-15 | 1987-05-22 | Hitachi Ltd | 低温プラズマによる成膜方法及び装置 |
| JPS6336522A (ja) * | 1986-07-30 | 1988-02-17 | Yoshihiro Hamakawa | 非晶質薄膜の形成方法 |
| JP2009155112A (ja) * | 2007-12-25 | 2009-07-16 | Panasonic Electric Works Co Ltd | 多結晶薄膜の製造方法、複合ナノ結晶層の製造方法、電界放射型電子源、発光デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367555B2 (enExample) | 1988-12-26 |
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