CA1059880A - Deposition of solid semiconductor compositions and novel semiconductor materials - Google Patents

Abstract

ABSTRACT OF THE DISCLOSURE
Solid layer semiconductor compositions are depos-ited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by ap-plication of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions comprising elements selected from the group consisting of Pb, Sn, Ge, Te, Se, Hg and Cd.

Description

FIELD 0~ THE INVENTION
The present invention is a division o~` Patent ~03 ~c~
Application No. ~o~ $ and relates to the making of semi-~ conductor devices and particularly semiconductor devices ; with electrical parameters interm~diate or outside the range o~ those imparted by con~entional semiconductor ` materials.
BACKGROUND OF THE INVENTION
The ability to vary the parameters such as the energy bandgap, carrier mobility, and thermal conductivity o~ semiconductor materials is crucial to the making of cer-tain semiconductor devices. Actually this involves the making o~ new semiconductor materials. Devices such as :.,, ~,'"`

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: ~, infrared filters and detectors, visible and infrared emitt-ing diodes and heterojunction devices with certain capabil-ities require semiconductor compositions with properties ;~i intermadiate or outside the range of conventional semicon-ductor materials. A method used to achieve these non-con-ventional properties is by forming a solid solution of two -~
or more semiconductor materials.
However, many alloyed semiconductor materials which are of considerable interest for making devices have components which are not readily miscible or are essentially immiscible in each other. Annealing for months or longer is required to achieve some measure of equilibrium with certain semiconductor materials and certain composition ranges of i, . .
certain semiconductor materials. For example, InAsxSbl_x ~ ~
., alloys, which are sensitive to radiation between 3-12 ~m ; and are useful in infrared emitting diodes and detectors, take about three months to anneal, see Woolley~ J. C and - ~;
Smith, B. A., Proc. Phys. Soc., 72, 214 (1958). Similarly . . . , GaxInl xSb alloys require an annealing time of eight (8) ~ç~ 20 weeks ~o achieve substantial equilibrium, see Woolley, J.C.
and Smith, B.A., Proc. Phys. Soc., 72, 214 (1958).
Numerous techniques have been utilized experiment~
ally to achieve miscibility more rapidly with certain com-positions and ranges of compositions. In bulk materials, ~
-~ directional freezing has, for example, been partly success- ~-~ ful in alloying some compositions of InAsxSbl x' see Woolley, ~ ;
i J.C. and Warner, ~ . Electrochem. Soc. 111, 1142 (1964). ~ ~;
Zone recrystallization of InAsxSbl x alloys has also a-chieved a measure of success, although homogeneous compo-~ 30 sitions in the range 0.5 ~ x ~ 0.8 have been difficult to :.., ,, "
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44,667 , ; obtain, see Woolleyr J.C. and Warner, J., J. Elec'crochem.
Soc. 111, 1142 (1964). Quenching and Czochralski methods have also been used to produce semiconductor alloys, see Hilsum, C., "Proc. of the International Conference on the ~ Physics of Semiconductors", p. 1127, Dunod, Paris (1964), '~ and Sirota, N. N. and Bolvanovich, E. I., Dokl. Akad, Nauk ' B.S.S.R. 11, 593 (1967). ~
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~` Thin film techni~ues have also been able to ex-tend the miscibility of certain compositions. For example, ' '~ 10 vapor quenching of metals, see Mader, S. in The Use of Thin ' Films in Physical Investigations, ed. J. C. Anderson, 1966, : . .
'` Academic Press, p. 433, splat cooling of Ga in GaSb, see Duwez, P,, Willens, R. H. and Klement, W. Jr., J. Appl.

~ Phys., 31, 1500 (1960), and flash evaporation of several ;~ ;

;~ III-V Group alloys including (Ga, In), (As, P) and GaSb ) Pl x' see Richards, 3. L., in The Use of Thin Films in ;~
., Physi-cal Investi'gations, ed. J. C. Anderson, 1966, Academic ~' Press, p. 416, have been found to produce homogeneous alloy layers in limited composition ranges between components -which are not readily miscible in bulk form. These layers, however, are usually amorphous or polycrystalline, rather ~' than epitaxial.
Formation of epitaxial layers is especially im-portant where the electrical characteristics of the desired ~ ``
device are related to semiconductor parameters, such as ;
carrier mobility, which are defect sensitive. No diffi-,~, '¦ culty has been encountered in preparing alloyed layers of '~ the various semiconductor compositions by epitaxial tech~

'i niques, e.g. chemical vapor deposition and liquid phase ; 30 epitaxy, when miscibility of the components is readily ,, "
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achieved in bulk form. However, with other semiconductor components where miscibility is limited in bul~., chemical vapor deposition and liquid phase epitaxy produce epitaxial films of only limited miscibility, see Stringfellow, G. B.
and Greene, P. E., J. Electrochem. Soc., 118, 805 (1971).
The present invention overcomes these limitations and shortcomings. It provides a way of readily making sub-stantially homogeneous compositions of previously reported immiscible, slowly miscible or par~ially miscible semicon-lQ ductor component materials. Moreover, the invention provides a way of producing these compositions, some of which are known and some of which are novel r in epitaxial layers.
., - SUMMARY OF-THE INVENTION
A method is provided for depositing a solld layer semiconductor composition on a substrate. Materials for for- -mation of the se~iconductor composition are simultaneously sputtered from a sputter target and electrically discharge ' reacted ~rom a reactive gas preferably by application of an RF potential.
Preferably, the method is used to epitaxially grow a substantially homogeneous layer of at least two semiconduc-tor materials. The steps include forming at least one sputter ~`~
; target containing at least a first semiconductor component material, disposing the formed sputter target and a substrate prepared for epitaxial growth in a spaced relation in a par-tial vacuum chamber, introducing into the vacuum chamber at least one reactive gas composition containing at least a sec-ond semiconductor material, depositing the first semiconductor component material on the substrate by sputtering, and simul-taneously reacting the reactive gas by electrical discharge . ,, , 44,667 and depositing the second semiconductor component material on the substrate. The sputter targets and reactive gases con-taining all component materialis necessary for forming either directly, or by chemical reaction with another gas or target material, the semiconductor materials desired in the miscible semiconductor layer.

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The method may also be utilized to make sputter ` targets of two or more semiconductor compositions so that :
the compositions may be simultaneously sputtered. ~ ;
Moreover, it has been found that the method can readily form substantially homogeneous compositions of ' ' ':1, ` `
novel metastable semiconductor materials previously re~
1; ported essentially immiscible or partially miscible. In ;~ addition, other novel semiconductor materials have been ;1 produced by the present invention.
`~ Other details, objects and advantages of the invention will become apparent as the following de.scrip-tion of the present preferred embodiments thereof and pre-sent preferred means for practicing the same proceeds.

- 20 B~IEF DESCRIPTION OF THE DR~WINGS
: , ;~ In the accompanying drawings the present pre-ferred embodiments of the invention and the present pre~
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ferred means for practicing the same are shown, in which:
~- Figure 1 is a cross-sectional view in elevation, with portions shown schematically, of an electrical dis- `~
'',~, ' ~ ' -charge-sputtering apparatus suitable for performing and making the present invention;
, ,:i Figure 2 is a schematic of the equivalent elec-, .--................................................................................. . .
; trical circuit for the sputtering operatlon of the appar-- 30 atus of Figure l;

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Figure 3 is a graph showing the change in energy gap and lattice spacing with change in percentage compo-sikion and with change in partial pressur~ of silane gas of gallium arsenide and silicon in a solid layer of the - present invention;
; Figure 4 is a graph showing the change in energy gap with change in percentage composition of germanium and silicon in a solid layer; and Figure S is a graph showing the change in eneryy gap with change in percentage composition of indium antimonide and indium arsenide.

DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring to Figure 1l apparatus is shown for growing a solid layer preferably of two or more semicon-ductor materials in accordance with the present inventionO

.:; ~. ., Hermetically sealed chamber 10 i.s comprised of cylindrical ~ide surfaces 11 of non-porous material such as metal, ; glass or recrystallized ceramic typically vertically .: .~ . .
positioned, and circular end caps 12 and 13 typically of an electrically conductive material such as low carbon steel or aluminum typically horizontally positioned~
Cylindrical sids surfaces 11 are hermetically sealed to the end cap 12 and 13 by standard L-shaped seals 14 to provide for ease in disassembly of the chamber 10 for dis-position and removal of apparatus to and from the chamber.
A vacuum port 15 is provided in end cap 12 at the center. Vacuum port 15 is hermetically sealed to con-duit 16 hy flange 17. The conduit 16 communicates with a standard oil diffusion, vacuum pump ~not shown~ to enable a partial vacuum to be established and maintained in chamber ~,667 .` .~.
10 after it is herm~tically sealed. Also positioned in conduit 16 between chamber 10 and the vacuum pump is a standard liquid nitrogen cold trap (not shown) to rPmove ~ volatile reaction products formed by the electrical dis-; charge reaction of the reactive yas as hereinafter described.
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Disposed in the chamber 10 is ground electrode ` 180 Ground electrode 18 is horiæontally mounted by a plurality of vertical extending rods 19 which have end portions 20 threaded into threaded openings 21 in end cap 12. Rods 19 also have threaded end portions 22 extendlng through threaded nuts 23 thereon to rigidly fas~en and support ground electrode 18. Rods 19 also electrically connect ground electrode 18 with end cap 12 which is in turn electxically grounded as indical;ed.
Ground electrode 18 is annularly shaped with a xectangular slot 24 at its cent:er. Disposed in the .
rectangular slot 24 is substrate holder assembly 25 of ;I rectangular shape supported by rods 26 thereofO Rods 26 ~` ~ are electrically coupled to a power source tnot shown) through openings 27 in end cap 12. Rods 26 are supported `

in opPnings 27 by insulating grommets 28 which also her~

~; metically seal and electrically insulate the rods 26 from -, the end cap 12. Sample holder assembly 25 also includes , horizontally positioned substrate holder 29 of rectangular v ~
; shape which is fastened to the ends o~ rods 26 by cap ~' screws 30. Substrate holder 29 has a raised thin central ::
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portion (e.g. 5 mils in thickness) and a thick L-shaped , periphery portion (e.g. 60 mils in thickness) to provide a high electrical resistance region at the central portion where substrate 33 is supported. Assembly 25 also includes . . .
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~ 67 :
mechanically bias means 31 fastened to the substrate holder 29 by cap screws 32. By this arranyement substrate 33 can be mounted :in the assembly 25 by mechanically biasing the bias means ~1 against the substrate holder 29. The sub-strate holder 29 is el~ctrically connected via rods 26 to the exterior of chamber 10 while being elec~rically in-sulated from end cap 12.
Also disposed within the chamber 10 centrally through end cap 13 is sputtering electrode assembly 34.
Electrode assembly 34 is comprised of circular target assembly 35 mounted centrally of hollow backing plate 37 and provided with O-ring seals 4SA to maintain both hermetic and water seals between plate 37 and target assembly 35 :
Target assembly 35 consists of a circular sputter electrode 36 having a central threaded integral s~em 36A to provide .
for mounting by threading into insulator core 38 positioned centrally of and insulated from backing plate 37. Target ~: as~emb~y 35 also includes sputter target 39 which overlies ~ -~ electrode 36~ Target 39 consists of material, preferably .. 20 one or more semiconductor materials, desired to be deposited ~ `

:: as a layer on substrate 33O The thickness of target 39 is :.: ~ .
not important to the sputtering operation but is typically ... .
about 1/8 to 1/4 inch in thickness.
-: Electrode assembly 34 is fastened to but electri- -cally insulated from end cap 13 by threading cap screws 40A -through backing plate 37 into circular metal cap 40 to . ~
. clamp fasten to insulator ring 41. Insulator ring 41 is ~:
centrally seated in groove 41A formed in end cap 13 and - backing plate 37 and hermetically sealed to cap 13 and plate 37 by O-ring seals 45. Insulator ring 41 is sealed with q4,667 .

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and fastened to end cap 13 hy clamping ring 42 which seats :~ at the ou~:er periphery of ring 41 and cap screws 42A
extending through ring 42 and threading into cap 13. ::
Cooling of target assembly 35 is accomplished by ~ :
water circulated through the passageways formed by sputter . electrode 36, backing plate 37 and O-ring seals 45A. The water is fed to and exited from the assembly through con- ~ :~
; duits 43A and 43B, respectively, which slip through cap 40 ~ and seat in and are welded to the upper portion of backing - 10 plate 37.
Around electrode assembly 34 is provided an annular shield 44 which is electrically insulated from assembly 34.

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i/~ 5hield 44 is fastened to end cap 13 by cap screws 44A which . ~ . .~ . , .
-i extend through shield 44 and thread into end cap 13 and is ~ .

grounded through end cap 13. ';hield 44 extends downwardly :.: from cap 13 to have its end portion flush with the outside ~ surface of sputter target 39. By this arrangement, shield `- 44 suppress~s discharge on the backside of electrode ;. ~ assembly 34 and thus prevents sputtaring of metal from the electrode assembly. The distance between shield 44 and . :.
:, .
~: sputter electrode assembly 34 is critical to suppress ~-sputtering, a spacing of approximately 0,5 centimeter being .. .;: .
: suitable. The distance between sputter target 39 and : .
~1 `. :` : .
i` ground electrode 18 is also critical to the deposition rate :~.
by sputtering as well as electrical di~charge and preferably maintained at a distance of about 2.0 centimeters.
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: Also disposed within chamber 10 is shutter - :: .
:i: assembly 46. Assembly 46 includes a shutter 47 disposed ,:
.~. horizontally betw~en ground electrode lB and sputter target . ~.,.:.. .
:~ 30 39. Shutter 47 is fastened to rod 48 which i5 positioned _ g_ :

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off center and extends upwardly through end cap 12 and ground electrode 18. By this arrangement shutter assembly 46 is able ~o pivot shutter 47 from its position between ;~
electrodes 18 and target 39 to expose substrate 33 to the .. . .
influx of the target material and the reactive gas mater- ~ ;
ial.
Also attached to chamber 10 at port 49 is a gas ~ ;
feed assembly 50 to provide for gases necessary to electri-`:3 cal reaction and sputtering in the chamber 10. Feed assem-bly 50 includes a mixer means 51 hermetically sealed to end ; ;~
, cap 12 over port 49 by flange 52. Mounted for inlet into mixer 51 through conduit 53 and valve 54 from pressurized vessel 55 is a gas such as argon suitable for use to support the ionization for sputtering. Also attached for axial in- ~-let to mixer 51 is conduit 56 with 3-way valve 57. In turn connected to inlets of 3-way valve 57 are conduits 58 and 59 ^~
to pressurized vessels 60 and 61, respectively. Also at-tached to pressurized vessel 61 opposite conduit 59 is con-duit 62 which is in turn attached through valve 63 to pres-surized vessel 64. By this arrangement, gas feed assembly 50 can inlet to chamber 10 a mixture of ionization gas suit- ~-~ : .
able for the sputtering an~ a reaction gas appropriate for electrical discharge reaction. Reaction gases which are in the gaseous form at the pressures involved are inputted to ~ the system by disposition in vessel 60. Reaction gases j which are in liquid form at the pressures involved and must i~ be inputted to the system as a vapor in a carrier gas are disposed in chamber 61; pressurized chamber 64 contains a suitable carrier gas such as argon which is bubbled through the liquid disposed in vessel 61 by opening valve 63.
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Also applied to sputter electrode 36 through contact 45, cap 40, backing plate 37 is an electric poten-tial from a power supply 65 suitable to provide both sputtering of target 39 and electrical discharge reaction of the reactive gas. The potential will vary with the com~
position of target 39 and the reactive gas. Typically, the power supply is an RF source of a voltage of 1000 to 3500 volts at a frequency in excess of a few MHz (e.g.
13.56 M~z) and a power of 0.5 to 5 kilowatts. No DC
potenti~l wiLl build up if the frequency of the applied ~. . .
voltage is too low because enough ions reach the target :: :
surface during the negative half of each cycle to neutralize the negative surface charge. The lower the frequency the-higher the voltage must be to provide the ionization needed for sputtering. At higher freqvencies, fewer ions reach the target surface in one cycle, in turn increasing the nega-tive bias and incxeasing the field across the dark space (as hereinafter described) and increasing ~he sputtering rates. Capacitor 66 is also provided between the power sup-~- 20 ply and the sputter electrode to prevent a DC current flow in the circuit and thus allows build up of a negative bias at the sputter target 39.
The optimum powex supply is also dependent on the pressure of the ionizing gas (e.g. argon) and reaction .;
,- gas mixture in the chamber and the geometry of the system.
: Typically, the pressure of the mixture is 1 to 5 millitorr.
RF power supplies of 1 to 5 kilowatt have been used success fully with the higher powers related to the larger area - electrodes. Higher deposition rates are also obtained with ~ 30 higher power supplies so that the power supply is one of 4~,667 the principle regulatory parameters of khe system along with the gas pressure in chamber 10.
In any event, the electric potential is applied ` across the space between target 39 and electrode 18 by grounding electrode 18 through end cap 12. Electrode 18 is . . .
much larger, typically 14 inches in diameter, than target 39, which is typically 4 inches in diameter~ to provide the desired bias in ion bombardment so that sputter deposition occurs at the substrate.
; 10 Another regulatory parameter of both the deposition ` rate and the orientation behavior of the deposited layer is ; the temperature of the substrate. The heating is achieved by passing a high electric current through substrate holder 29 by applying a potential through rods 26. The thin central por-tion of holder 29 provides a high resistance region where heat~
' ! ing of the substrate can be accomplished. Highest deposition . ~ .. ~ , .
~ rates are achieved at lowest substrate temperature. Thus the '~ temperature of the substrate is regulated to strike a balance between deposition rate and the nature of the growth desired.

~' 20 Heating of the substrate is primarily important ~, to determine the orientation behavior of the grown layer.
, At lower temperature, typically less than about 300C, the , layer formed on the substrate is amorphous. Heating is typically to above 300C to provide polycrystalline growth ;~
1 and typically to above 500C to provide highly oriented, - epitaxial growth. The exact temperature appropriate for polycrystalline and epitaxial growth will vary with the ' substrate material and the crystal orientation of the sub-. :
strate used. Typically for a gallium arsenide substrate, with the surface in a (1,1,1) orientation polycrystalline ~12-44,667 ~59~

growth is achieved above 300C and epitaxial growth is achieved between 530 and 650~C. Temperatures between 530 and 650C can be ohtained with electric currents in the ~ -range of 6 volt - 200 amp, Higher temperatures of approxi mately 700 to 800C may be needed for epitaxial growth on ;
silicon substrates; however, this temperature is still ~-substantially below the temperatures required for epitaxial growth by pyrolysis (i.e, about 1100 - 1200C).
It should also be noted that the structure of the epitaxial layer is also dependent on the crystal structure and crystal orientation of the substrate as is well known in the art. For an epitaxial :Layer, a single crystal sub-strate should be used which provides a reasonably close match to the lattice structure and lattice dimensions of the layer to be grownO Further, the substrate shouid be . , .
: cleaned, lapped and polished prior to deposition to minimize " defects in the epitaxially grown layer. It is also well known generally in epitaxy technology that the crystal orientation of the surface of the substrate on which the . ~' .
epitaxial layer is grown is important to the growth rate of ` the layer, It should also be noted in ~his connection the .
epitaxial structure may be lost and strains may be intro- ~
duced in the layer if the layer is substantially thick ~ ~-;- because of the difference in lattice spacings between the -substrate and the epitaxial layer.
Referring to Figure 2, the operation of the inven-tion is described by reference to the equivalent circuit for the sputter deposition and discharge reaction in accordan~e , with the present invention. In sputtering, a glow space is `- 30 formed bstween the target 39 and electrode 18 by oscillating 59 ~ ~

elsctrons in the electric ield so that they make elastic collisions with gas atoms to cause ionization of the gas.
Dark space~ form between the electrode and the glow space.
The potential difference between the electrode, which is to a first order capacitive, is taken almost entirely across the dark spaces and is represented by capacitors, the glow `~ space being at a near-uniform potential. Further, due to the large difference in ion and electron mobilities, the glow space potential is always a higher potential than the -electrode surfaces and rectifying action occurs at the glow . ,: ~ . , space boundaries, represented by the diodes. Some ion con-duction is directed to the walls and surfaces of chamber 10 and electrode 18 as well as the substrate holder 29 and ~ .
substrate 33, as shown in Figure 2, but such conduction is ~, minimized by proper dimensioning of target 39 and electrode .~ . .
18. See also Koenig and Maissel, IBM J. Res. Develop. 14, 168, (March, 1970), Logan, IBM J. Res. Develop. 14, 172, ..
, (March, 1970), Maissel, Jones and Standley, IBM J. Res.
Develop. 14, 176, (March, 1970), Logan, Maddocks and Davidse I~M J. Res. Develop. 14 t 182, (March, 1970), and ::
Mazza, IBM ~. Res. Develop. 14, 192, (March, 1970).
, :The reaction or decomposition of the reactive gas also occurs in the glow space. The oscillation of tha electrons causing heating so that high temperatures generated within the gaseous molecules causes their reac-tion and decomposition to the deposited semiconductor material and a volatile gas or gasas which are exhausted ' .':
into the vacuum system and collected in the coldtrap de~cribed above. Again, this reaction and/or decomposition --occurs at much lower temperatures than is necessary for ,~ .

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pyrolytic decomposition, although the substrate is heated as above de~cribed to control the crystal struGture of the grown layer.
In operation, a brief clean-up sputtering in argon or other suitable inert gas is first performed. A reactive gas, containing the semiconductor material, is then leaked into chamber 10 from gas feed assembly 50 mixed with argon or other`inert gas to support sput~ering. The shutter 46 is pivoted to expose the substrate 33 and the growth is then commenced by simultaneously sputtering the target material and electrically reacting the reactive gas.

., The relative percentages of the components in the deposi~ed `-composition is controlled by adjusting the proportion of reactive gas to argon and the delposition rate. In this con~
nection, it should be noted that both the deposition rate .. . .
'"~! of the sputtered and reactive gas componen~s are dependent on the applied voltage of power supply 65. Epitaxial growth ;;
is facilitated by the use of polished, cleaned and heated single crystal substrates which are reasonably well matched

2~ to the structure~and lattice dimensions of the epitaxially grown layer.
The present invention is particularly use~ul in . .
epitaxially growing a miscible solid layer o~ two or more semiconductor materials which were previously considered immiscible, or which were previously considered miscible only by long anneals. Such miscible layers are found to be meta-stable on heating to temperatures several hundred degrees above the growth temperature. In addition, growth can pro-, ceed at temperatures low enou~h to favor greatly extended -~ 30 solid solubility. Amorphous, polycrystalline and single 44,667 , crystal layers of IV-IV, III-V and II-VI semiconductor compounds can thus be epitaxially prepared relatively readily.
Table I furnishes examples of solid solution preparation using various alternatives for both the target composi ion and for the composition of the reactive gas.
One of the important advantages of the method derives from the ease with which the reactive gas species, e.g., GeH~, Bi(CH3)3, etcO, can be decomposed in a confined electrical discharge allowing the freed metal component to combine with the elements transported by sputtering to form an intimately mixed substantially homogeneous composition at the sub-strate surface.

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As can be seen from Table I, a number of known semiconductor compositions are readily produced by the ~ :
pre~ent method, which compositions wsre previously reported : -as only partially miscible or "slow to equilibrate", requiring long annealing times. -Referring to Table II, the present invention is also able to produce novel semiconductor compositions previously not known. Table II contains examples of com-positions known and contemplated to be made by use of the present invention and is clearly not exhaustive.

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TABLE II
~XAMPLES OF NOVEL SOLID SOLUTIONS AND
PREPARATIVE SPUTTER TARGETS AND REACTIVE GASES

Sputter Reactive ~' Target Gas Solid Solution Composition Composition Composition (5aAs)l_x Slx ~l) GaAs SiH4 or SiC1 tGaAs~l_x Gex(l) GaAs GeH4 or Ge(CH3)3 (GaSb~l-x Six GaSb SlH4 or SiC14 (GaSb)l_x Gext ) 5aSb GeH4 or Ge(CH3)~
(GaP)l-x Six(l) GaP SiH4 or SlC14 ~- ~
(GaP)l x Gex(l) GaP GeH4 or Ge(CH3)3 ;
Gax Asy Siz(2) Ga or Si AsH3 & SiH4 or GatCH3)3 & AsH3 Gax Asy Gez(2) Ga AsH3 ~ GeH4 Gax Sby Si t2) Ga Sb(CH3)3 ~ SiH
G~x Sby Gez(2) Ga (C~3)3 ~ Ge(cH3) Ga Py Si (2) Ga PH3 & SiH4 ;~
Gax Py Gez(2) Ga PH3 ~ GeH
(GaAs)x Siy Ge (2) GaAs SiH4 & GeH4 ~'~
(GaSb)x Siy Gez(2) GaSb SiHk & GeH
(GaP)x Siy Gez(2) GaP SiH4 ~ GeH4 ~ :
(BN)l_x Six( ) BN SiH4 or SlC14 (AlN)l-x Six( ) AlN SiH4 or SiC14 (GaN)l_~ siX(l) GaN SiH4 or SiC14 (InN)l_~ siX(l) InN SiH4 or SiC14 ~ ;
(BP)l-x siX(l) BP SiH4 or SiC14 - ~-(1) ~here x is a number greater than about O.Ol and x + (l-x) ~ 1 (2) Where x, y and z are numbers graater than about O.Ol and x t y t z Dr 1 ~ 44,667 81~
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Sput~er Reactive Target G~s Solid Solution Composition Compo~_tion ~
AlP)l~x Six ) AlP SiH4 or SiC14 ~AlSb)l_x Six(l) AlSb SiH4 or SiC14 .
t )l-x Six InP SiH4 or SiC1 (AlAS)l-x Six(l) AlAs SiH~ or SiC14 ;
(InAs)l_x SiX InAs SiH4 or SiC1 (BN)l-x 5ex( ) BN GeH4 or Ge (CH3)4 (AlN)l_X Gex AlN GeH4 or Ge(CH3)4 : :
(GaN)l_x Gex( GaN GeX4 or Ge(CH3) (InN)l_x Gex(l) InN GeH4 or Ge(CH3)4 (BP)l-x Gex~ BP GeH4 or Ge(CH3)4 (AlP)l-x Gex(l) AlP GeH4 or Ge(CH3)4 (AlSb)l-x Gex(l) AlSb GeH4 or Ge(C~3) (InP)l-x Gex InP GeH4 or Ge(CH3)4 .
(AlA9)l x Ge~tl) AlAs GeH4 or Ge(CH3)4 (InAS)1_X GQX(1) InAs GeH4 or Ge(CH3) (AlSb)l_X Gex( ) AlSb GeH4 or Ge(CH3)4 ~ -tInSb)l-x Si~(l) InSb Si~4 or SiC
(InSb)l_x Gex(l) InSb GeH4 or Ge(CH3)4 :
(BN)l-x Snx(l) BN ( 3)4 (AlN)l_x Snx(l) AlN ( 3)4 (GaN)l_x Snx( ~ G~N ( 3)4 (InN)l_x snX(l) InN Sn(CH3)4 (BP)l_X Sn (1) BP ( 3)4 :

(1) Where x i8 a number greater than about 0.01 and x + (l-x) = 1 .~"
: ~, .. .. . . .

44,6~7 ~ 38 .:
TABLE II ~Cont.) Sputter Reactive Target Gas :9~ a~ L5L~ Co~ ion :
(AlP)l x Sn (1) AlP Sn(GH3)4 ~ x Snx GaP Sn(CH3)4 (InP)l-x Snx(l) InP Sn(CH3)4 ~AlAs)l_x Snx(l) AlAs Sn(CH3)4 (GQAS)l-x Snx~l) GaAs SntCH3)4 )l-x Snx(l) InAs Sn(CH3)4 (AlSb)l_x snX(l) AlSb Sn(CH3)4 (GaSb)l_~ Snx(l) GaSb Sn(CH3)4 (InSb)l_x Snx(l) InSb Sn(C~3)4 (BN)X Sny Siz(2~ BN Sn(CH3)4 & SiH
~AlN)X Sny Si~(2) AlN sn(cH3)4 & SiH4 (GaN)x Sn Siz~2) GaN Sn(CH3)4 6 SlH4 (InN)x Sny Siz(2) InN Sn(CH3)4 ~ SiH4 ~:.
BP)~ Sny Siz(2) BP Sn(CH3)4 & SiH4 (AlP)X Sny Si (~) AlP Sn(CH3)4 & SiH4 (GaP)x Sny Si~(2) GaP Sn(CH3)4 & SiH
tInP)x Sn Siz(2) InP SntCH3)4 & SiH4 (AlAs)x Sny Si ~2) AlAs Sn(cH3)4 & SiH4 (GaAs) Sn Si~2) GaAs Sn(CH3)4 & SiH4 (AlSb~X Sny Siz(2) AlSb Sn(cH3)4 & SiH4 ~:
tGsSb)x Sny Si t2) GaSb Sn(CH3)4 & SiH4 -~
(InSb)xSny Si (2) InSb 3 4 4 (1) Where x i8 a number greater than ~bout 0.01 and x + (l-x) ~ 1 (2) Wher~ x, y and z are numbers greater than about 0.01 and x + y + z ~ 1 . .
.~' i ;, , . , ,' : ~. ' 44,667 ~5~8~3~

Sputter Reactive Tar8e~ Gas ~ ~o~po~ition ~ 9~f~
~BN) Sny Gez(2~ BN Sn(CH3~4 & GeH4 ~ :
~AlN)X Sn Ge (2) AlN Sn(CH3)4 6 GeH~
(GaN)x Sny Gez(2) GaN 5n(GH3)4 & GeH4 (InN)x Sn Gez(~) InN Sn(CH3)4 ~ GeH4 : :~
(BP)X Sn Ge (2) BP Sn(CH3)4 & GeH4 (AlP)X Sny Gez(2) AlP Sn(CH3)4 & GeH4 ~ ~-(GaP) Sny Gez~2) GaP Sn(CH3)4 & GeH4 (InP)x Sny Gez(2) InP Sn(CH3)4 & Ge~l4 ~; :
(A~As)x SnyGez(2) AlAs Sn(CH3)4 ~ GeH4 ~ :
(GaAs)x Sny Ge (2) GaAs Sn(CH3)4 6 GeH4 -(AlSb)X Sny Gez(2) AlSb Sn(CH3)4 & GeH4 - :
(GaSb)x Sny Gez(2) GaSb Sn(CH3~4 ~ GeH4 (InSb) Sny Ge (~) InSb Sn(CH3~4 & GeH4 (BN)X Siy Gez(2) BN SiH4 & GeH
(AlN)X Siy Ge7(2) AlN SiH4 & GeH4 ~GaN)x Si Ge7(~) GaN S$H4 ~ GeH4 `
(InN) Siy Gez~2) InN SiH4 ~ GeH4 :~
(BP)X Siy Gez(2) RP SiH4 & GeH
(AlP)X Siy Gez(2) AlP SiH4 & GeH4 : :~
(AlSb)X Siy Ge~(2) AlSb SiH4 & GeH4 ~InP~x Siy Gez(2) InP SiH4 & GeH4 : ?
(.~lAs)x Siy Ge (2) AlAs SiH4 & GeH
(InAs)x S~y Gez(2) InAs SlH4 &i GeH4 . "~ .
:
(2) Where x, y and z are numbers greater than about 0.01 and '" x ~ y ~

'. -22-. . .
.'~'~, , , ',.,', :. . ' ' ; ' ' "f 44,667 8~

TABLE II (Cont.) Sputter Reactive -~ Target Gas Solid Solwtion Co~position ~E~ Composition (InSb)x Sl Gez~2) InSb SiH4 & GeH4 In Asx Siy Gez~3) In AsH3 h SiH~ & GeH4 Inv A6X Siy Ge~t3) Ge In(CH3)3 & AsH3 & SiH4 B N Siz(2) Si B2H6 & N2 Alx Ny Si (2) Al N2 & SiH4 Gax Ny S~(2) Si Ga~cH3)3 & N2 ' Inx Ny Siz(2) In 4 2 i~ ` BX P SiZ (2) Si B2H6 6 SiH4 . x y z Al PH3 6 SiH4 Alx Sby Siz(2) Al SbH3 6 SiH4 Inx Py Siz(2~ In PH3 & SiH4 ~x Asy Siz(~) Al AsH3 6 SlH4 ~.
~ I~x As Siz(2) In AsH3 6 SiH4 : Bx Hy Ge~(2) Ge B2~6 6 ~2 Al~ Ny Ge~2) Al N2 & GeH4 Ga~ Ny Gez(2) Ga N2 & GeH
~; Inx Ny Gez(2) Ge ln(CH3j3 & N2 Bx P Ge (2) Ge B2H6 & PH3 Alx Py Gezt2~ Ge Al(CH3)3 ~ PH3 . Alx Sby Gex(2) Al SbH3 & Ge~4 Inx Py Gez(2) In PH3 & GeH4 Al Asy Gez(2) Al AsH3 ~ GeH4 :~ Inx Asy Gez(2) Al SbH3 6 GeH4 . j .
:. (2) Where x, y and z are numbers grea~er than about 0.01 and ,, x + y + z - 1

(3) Where v, x, y and z are numbers grea~er than about 0.01 and + x + y + z ~ 1 ~ 44~667 ~9~
:
TABLE II ~Con~
Sput~er Reactive .
Targe~ Gas Solld Solution Composition Composition Composition Al Sb Ge ~2) Ge Al(CH3)3 & SbH3 Inx Sby Siz~2) In SbH3 6 SlH4 -~
Inx Sby Gez(2) Ge In(cH3)3 & SbH3 B ~ Sn (2) Sn B2H6 & N2 Al Ny S~(2) Al N2 & Sn(CH3)4 Gax Ny Snæ(2) Sn Ga(cH3)3 & N2 Inx N Snz(2~ In N2 & Sn(CH3)4 Bx Py Snz(2) B PH3 ~ Sn(CH3) Alx Py Snz(2) Al PH3 & Sn(C~3)4 ;
.1 , .
~' ~ax Py Snz(2) Sn Ga(C~3)3 ~ PH3 ;~ Inx Py Snz(2) In PH3 & SntCH3)4 .~` Alx As Sn (2) Al AsH3 ~ Sn(CH3)4 ~ :
.~ Gax Asy Snz(2) Ga AsH3 ~ Sn(CH3)4 . x y z Sn In(CH3)3 ~ As~3 . Alx sby Snz(2) Al SbH3 ~ Sn(CH3)4 ~
,. Gax Sby Snz(2) Ga SbH3 & Sn(CH3)4 ~.
Inx Sby Snz(2) In SbH3 & Sn(CH3)4 ;;`
B~ Nx Sny Siz~3) N2 & Sn(CH3)4 & ~iH4 ~ ;
Alv Nx Sny Si (3) Al N2 & Sn(CH3)4 & SiH4 Cav Nx Sny Siz Ga N2 & Sn(CH3)4 & SiH4 J, Inv N Sny S~(3) In N2 & Sn(CH3)4 & SiH4 ,,~ ~', : ;~ ~- .
(2) Where x, y and z are numbers greater than about 0.01 and ~ ~:
~- ' X ~ y t Z n 1 ~ -., (3) Where v, x, y and z are numbPrs gre~ter than abou~ 0.01 and V + X t y + Z

: -24-44,~67 TABLE II (Con~
Sputter Reactive Target Gas Bv Px 5ny Siz(3) B PH3 & Sn(CH3)4 & SiH4 Alv Px Sny Siz(3) Al PH3 & Sn(CH3)4 ~ SiH4 GBV P Sny Siz(3) Ga PH3 & S~(C~3)4 & SiH4 Inv Px Sny Siz(3) In PH3 & Sn(CH3)4 & Si~4 Alv Asx Sny Siz( ) Al AsH3 & Sn(CH3)4 ~ SiH
Ga As Sn Si (3) Ga AsH3 ~ Sn(CH3~4 & SiH4 v x y ~ Sn Al(CH3)3 ~ SbH3 ~ SiH4 ~ :
Gav Sb Sn Si (3) Ga SbH3 & Sn(CH3)4 & SiH4 ~
v Sbx Sny S~ Sn In~CH3)3 ~ Sb~3 ~ SiH4 ~ -Bv Nx Sny Gez B N2 & S~(~H3)4 ~ GeH4 Alv Nx Sny Ge Al N2 ~ Sn(CH3)4 ~ GeH4 ::~;
Gav Nx Sny Ge Ga N2 & Sn(CH3)4 & GeH~ ~-Inv Nx Sny Ge~ Sn In(CH3)3 & N2 & Ge~4 BV PX Sny Ge Sn B2H6 ~ PH3 & Ge~4 Alv Px Sny Gez Al 3 ( 3)4 4 Gav Px Sny Ge Sn Ga(CH3)3 ~ PH3 & GeH4 Inv Px Sny Ge Ge In(CH3)3 ~ PH3 & sn~c~3)4 v Asx Sny Gez Sn Al(CH3)3 ~ AsH3 ~ GeH4 v A6x Sny Gez Ge Ga(CH3)3 ~ AsH3 & sn(c~3)4 Alv Sbx Sny Ge Sn Al(CH3)3 ~ SbH3 & GeH4 Gav SbX Sny 5ez Ge Ga(CH3)3 ~ SbH3 & Sn~CH3)4 In SbX Sn Gez Sn In(CH3)3 & SbH3 ~ GeH

(3) ~here v, x, y and z are numbers greater than about 0.01 and v + x + y t 2 ~ 1 -~5-.

44, 667 -..
~ , Sputter Reactive Target Gas :~
Solid Solution ComPosltion ~ æ_sition Composition v Nx Siy Gez Ge B2H6 & N2 & SiH4 x Siy Ge Al N2 & SlH4 & GeH4 Gav Nx Siy Gez Ga N2 & SiH4 & GeH4 x Si Gez In N2 & SiH4 & GeH4 : Bv Nx Siy Ge B N2 6 SiH4 & GeH4 Al P Si Gez , Ge Al(CH3)3 & PH3 & SlH4 Alv SbX S~y Ge Al SbH3 & SiH4 ~ GeH4 Inv Px Siy Gez In PH3 ~ SiH4 & GeH
Alv Asx Siy Ge Ge Al(CH3)3 ~ AsH3 & SiH
,~ Gav As Si Ge t3) Ga AsH3 & SiH4 & GeH4 Gav SbX S$ Ge (3) Ga Sb(CH3)3 ~ SiH4 & Ge(CH3) .-. Gav Px S~ Ge (3) Ga PH3 & Si~4 & GeH4 .x (GaAS)l-x(I~A 3xtl) InAs GatCH3)3 & AsH3 ;: (GaSb)l_x ~InAs)xtl) InAs Ga(CH333 & SbH3 . ,.~. ..
`.` (GaP)l_x (InAS)x(l) InAsr G8(tCcH3)3 & PH 3 ' (G~As) (InSb) (1) GaAs or In(CH3)3 ~ SbH3 or .~ l-x x Insb Ga(CH3)3 & A3H3 (GaSb)l_x(Insb)x(l) InSb GnatCc~3)3 & SbH3 (GsP) (InSb) (1) GaP or In(CH3)3 ~ SbH3 or l-x x InSb Ga(cH3)3 & PH3 ::
. (GaAs) (InP) (1) GaAs or In(CH3)3 & PH~ or .. l-x x InP Ga(cH3)3 & As 3 (1) Where x ls a number greater than sbout 0.01 and x + (l-x) ~ 1 ;
~- (3) Where v, x, y and ~ are numbers greater than about 0.01 and " v + x ~ y + z ~
...
.i .

::
',''''"~' '' 44,667 ~5~
:; .
TABLE II (Con~.
Sputter Reactlv~
~ Target Gas : Solid Solution Composltion Com~o*tion Composition ' (GaSb)l (InP)x(l) GaSb or ( 3)3 H3 or : -x InP Ga(CH3)3 & SbX3 (GaP)l-x(Inp)x(l) GsP or n(CH3)3 & PH3 or ! InP S H3)3 ~ PH
(GaAs) (InAs) Siz(2) GaAs or In(CH3~3 ~ AsH3 & SiH4 or ; x Y InAs Ga(CH3)3 ~ A9H3 6 SiH
(GaAs) (InAs) Ge (2) GaAs or In(CH ) & AsH & GeH4 or x y z InAs GatCH33)33 & AsH3 & GeH4 :~; (GaSb) (InAs) Si (2) GaSb or In(CH )3 ~ AsH ~ SiH~ or x y ~ InAs Ga(CH3)3 6 SbH33 & SiH4 GaSb~ (InAs) Ge (2) GaSb or In(CH3) & AsH3 ~ GeH4 or ~ . :
x y z InAs Ga(CH3)33 & SbH3 & GeH4 (GaP) (InAs) Si (2) GaP or In(CH ) ~ AsH & SiH or ~, x y z InAs GatCH3)33 ~ PH33 ~ SiH4 (GaP) (InAs) Ge (2~ GaP or In(CH )3 & A~H & GeH4 or , x Y z InAs Ga(CH3)3 & PH33 & GeH4 ;. (GaAs)v(InAs)x Siy Ge (3) InAs In(CH3)3 ~ AsH3 & SiH4 GaSCH3)3 ~ AsH3 ~ S 4 ", ~ (GaSb)v(InAs)xSi Gez(3) GaSb or In(CH3)3 & AsH3 & SiH4 &
y Y InA~ G~H4 or .~ Ga(CH3)3 & AsH3 & SiH4 &

~ (G~P)v(InAs)xsiyGez(3) InAsr In(CH3)3 & A9H3 & 4 :. . Ga(CH3)3 & PH3 & SiH4 &
,, , ~
(1) Where x i8 a number greater than about 0.01 and x + (l-x) ~ 1 (2) Where x, y snd z are numbers ~reater than about 0.01 and ~, x ~ y + z ~
:, (3) Where v, x, y and z sre numbers greater ~han about 0.01 and , v + x ~ y ~ z - 1 :

~ ' .

., .

:': .

44~667 - :

8~

TABLE II (Cont.~
Sputter Reactive Target Gas L~L~:4~LL~C~ .. L~ Co~position Composition : ~
- (GaAs) (InSb) Si (2) GaAs or In(CH ) & SbH3 & SiH or ~ ~;
: x y z InSb Ga(CH3)3 r~ AsH3 ~ SiH4 ; (GsAs) (InSb) Gez(2) GaAs or In(CH3)3 & SbH3 & GeH4 or x Y InSb Ga(CN3)3 & AsH3 & GeH4 -. (GaSb)x(InSb) Si (2) GaSb or In(CH3)3 & SbH3 & S~H4 or : Y InSb Ga(CH3)3 & SbH3 & SiH4 :
:. , (GaSb) (InSb) Ge (2) GaSb or In(CH3)3 & SbH3 ~ GeH4 or x y z InSb Ga(CH3)3 & SbH3 & GeH4 ~:
(GBP) (InSb~ Si (2~ GaP or In(CH3)3 & SbH3 & SiH4 or x y z InSb Ga(CH3)3 & PH3 & SiHh :~ (GaP) tInSb) Ge (2) GaP or In~CH3)3 & SbH3 & GeH4 or :., x y z InSb Ga(CH3)3 & PH3 & GeH4 :~`
(GaAs)v(InSb)xSiyGez(3) IGnASbS or In(CH3)3 & SbH3 & SiH

(HH3)3 & A5H3 & SiH4 & ~ `
~ (GaSb)~(InSb)xSiyGez(3) GIaSb or In(CH3)3 & SbH3 & S~H4 :.~ Ga(~H3)3 & Sb~3 ~ SiH4 &

.:o : (GaP)v(InSb)xSlyGez(3) GIaPSbr G(H 3)3 & SbH3 & SiH4 &

; Ga(CH3)3 ~ PH3 ~ SiH4 &
(AlSb)X(BP) Siz(2) AlSb or 2H6 & PH3 & SiH4 or ~;. Y BP Al(CH3)3 ~ SbH3 & SiH
~- (GaAs) ~InP) Si (2) GaAs or ( 3) ~ PH ~ SiH4 or - x y z InP Ga(CH3)3 & 3AsH3 & SiH4 ~ `~
. (AlSb) (AlAs) Siz(2) AlSb or Al(CH3)3 & AsH3 & SiH4 or ~ :
i x Y AlAs Al(CH3)3 & SbH3 & SiH4 .-.; : . .
(2) Where x, y and z are numbers greater thsn about 0.01 and ~-.~` - x + y + z - 1 , -:, .. .. . ..

~, (3) Where v. x, y and z are numbers greater thsn about 0.01 and ~, v ~ x t y + z = 1 :
, ,.... ..

~4,6~7 ~L~5~8~

TABLE II 5Cont.~
: Sputter Reactlve Tar8et Gas Solid Solution Composition Composition C~posltion (GaAs) ~InP) Ge (2) GaAs or In(CH3)3 ~ P~ ~ GeH4 or x y z InP Ga(cH3)3 & As~3 & GeH4 (AlN) (GaN) Ge (2) AlN or Ga~CH3)3 6 N2 & GeH4 or x y z GaN Al(CH3)3 & N2 & GeH~
(GaSb) (InP) Si (2) GaSb or In(CH3)3 & PH3 ~ SiH4 or : :~
x y z InP Ga(CH3)3 & SbH4 & SiH4 ~BP) tInAs) Si (2) BP or In(CH3)3 ~ AsH3 & SlH4 or x y z InAs B~H6 & PH3 ~ SiH4 (GaSb) (InP) Ge (2) GaSb or In(CH3)3 & PH3 & GeH4 or , - x y z InP Ga(CH3)3 & SbH3 & GeH4 (BN) (InN) Ge (2) BN or In(CH3)3 & N2 & GeH4 or -~: x y z InN B2H6 & N2 & GeH
. 7 ' (GaP) ~InP) Si ~2) GaP or ( 3)3 3 4 x y z InP Ga(CH3)3 & PH3 & S1~4 . (AlAs) (AlP) Si (2) AlAs or Al(CH3~ & PH & SiH4 or x y z AlP Cl(CH )3 & As~ ~ 4 (GaP) (InP) Ge (2) GaP or In(CH3)3 6 PH3 & GeH4 or x y z InP Ga(CH3)3 & P~3 & GeH4 : (AlSb) (InAs) Sl (2) AlSb or In(CH3)3 & AsH3 S SiH4 or H
.~ x y z InAs Al(CH3)3 6 SbH3 & SiH4 ` (GaAs)v(InP)~Si Ge (3) GaAs or In(CH3)3 ~ PH3 ~ SiU4 &
Ga(C~3)3 ~ AsH3 & SiH4 &
:.~ GeH4 ~ (3) H &
' A'~ (BN)v(InN)ysiyGe BINnNor In(CH3)3 & PH3 6 G 4 B2H6 & N2 ~ Si~4 & GeH4 (GaSb)v(InP)xSiyGez(3) GaAs or GeH 3)3 orPH3 ~ SiH4 &
... , Ga(CH3)3 & SbH3 ~ SiH4 &

, .. .
.,!,. (2) Where x, y and z are numbers 8reater than about 0.01 and ~-, x + y ~ z ~ 1 (3) Where v, x, y and z are numbers ~reater than about 0.01 and : v ~ x ~ y + æ ~ 1 . ., :
~~9~

, . . .

~,667 5~8~ ~

TABLE II (Cont.? ~
,: ~
Sputter Reactive Target Gas Solid Solution ComRosition ~Y~ Composition ~GaN)v~AlN) SiyGe (3~ AlN or Al(CH3)3 & N2 & 4 Ga(CH3)3 & N2 ~ SiH4 :~

- (Gap)v(Inp)xsi~Geæ(3) GaP or In(CH3~3 ~ PH3 & S 4 GatCH3)3 & PH3 & Si 4 ~.

(GaAs)l_x ~AlAs)x(l) AlAs Ga(CH3)3 & AsH3 :~:
:~ ~GaSb)l x (AlA~)X(l) AlAs Ga(CH3)3 & SbH3 ~-' (GaP)l_x (ALAs)x AlAs Ga(CH3)3 & PH3 ~ :
.~, (GaAs)l_x ~AlSb)X(l) AlSb Ga(CH3)3 & AsH
.~ (GaSb~l x (AlSb)x(l) AlSb Ga(cH3)3 & SbH3 ~ ;
~-, (GaP)l x (AlSb)X(l) AlSb Ga(CH3)3 & PH3 ~ ~ :
(GaAS)l-x (AlP~x( ) AlP Ga(CH3)3 & AsH
1 (G~Sb~1_X tA1P)X(1) AlP Ga(Ca3~3 & SbH3 ~ (GaP)l-x (AlP)x( ) AlP Ga(CH3)3 & PH3 `i (GaAs)x (AlAs)y Slz(2) AlAs Ga(CH3)3 & AsH3 & SiH4 (GaAs)x (AlAs~y Gez(2) AlAs Ga(CH3)3 ~ A6H3 & GeH4 ~ , (GaSb) (AlAs)y Si~(2) AlAs Ga(CH3)3 & SbH3 & SiH4 :
~ (GaSb)x (AlAs~y Gez(2) AlAs Ga(CH3)3 ~ SbH3 & GeH4 ~ ;
., (GaP)x (ALAs)y Slz~2) AlAs 3)3 ~ PH3 & SiH4 :~
(GaP)x (AlAs)y Gez(2) AlAs Ga(CH3)3 & PH3 & GeH
~, (GaAs)v(AlA~)xSiyGez~3) AlAs Ga(CH3)3 & As~13 & 4 , :
(l) Where x is a number greater than sbout O.Ol and x ~ x) ~2) Where x, y and z are numbers greater than about O.Ol and ,~, x ~ y + z 3 1 ~.
:' (3~ Where v, x, y and z are numbers greater ~han about O.Ol and ~'~ v ~ x + y + z e~ 1 :: -30 .,, ' .

, ~ , - " . . .

4~,667 ~3~5~
: `
. .
Sputter Reactlve Target G s Solid Sol~ - C~osli y Composition Composition tGaSb)~(AlAs)~SiyGez(3) AlAsGa(CH3) & SbH3 & SlH4 &

(GaP)v(AlAs)xSiyGe (3) AlAsGa(CH3)3 & PH3 & SiH4 &

; (GaAs)x (AlSb) Si (2) AlSbGa(CH3)3 & AsH3 & SiH4 :~:
. (GaAs) (AlSb)y Gezt2) AlSbGa(CH3)3 & AsH3 & GeH
tGaSb) (AlSb)y Siæ(2) AlSbGa(C~3)3 & SbH3 & SiH4 ~` (GaSb)x (AlSb) Ge (2) AlSbGa(CH3)3 & SbH3 & GeH
~;` rGaP)x ~AlSb)y Si (2) AlSbGa(CH3)3 & PH3 & SiH4 (GaP) tAlSb~y Ge~(2) AlSbGa(CH3)3 & PH3 & GeH4 (GaAs)v(AlSb)xSiyGez(3) AlSbGa(CH3)3 & AsH3 4 ~ (GaSb) (AlSb) SiyGez~3) AlSbGa(CH3)3 6 SbH3 & SiH4 : 4 .~ (GaP) (AlSb)xSi Ge (3) AlSbGa(cH3)3 & PH3 & 4 ; ~:

i tGaAs) (AlP)y Slz(2) AlPGa(CH3)3 & As~3 & Si~4 :
: (GaAs)y (AlP) Gez(2) AlPGa(CH3)3 & AsH3 6 GeH4 ; .
: (GaSb) (AlP)y Si (2) AlPGa(CH3)3 & Sb~3 ~ SiH4 (GaSb)x (AlP)y Gez(2) AlPGa~CH3)3 ~ SbH3 & GeH
~. (GaP) (AlP)y Siz(2) AlPGa(CH3)3 6 PH3 & SiH4 :, (GaP)x (AlP) Ge (~) AlPGa(CH3)3 ~ PH3 & GeH
. (GaAs)v(AlP)xSiyGez(3) AlPGa(CH3)3 & A8H3 & SiH4 ., , ~ .
(2) Wh&re xs y and z are numbers greater than about 0.01 and X + y ~ 2 ~
,. . .
; t3) Where v, X9 y and z are numbers greater than about 0.01 snd '' v ~ x ~ y + ~ ~ 1 ... .

:; 31 ,'~' , ,~; .
.
,. ' ~ : ' ~ ' :

44~667 TABLE II (Cont.) Sputter Reactlve Target Gas Solld Solutlon Composition ~5~ Compositlon (GaSb) (AlP) SlyGez(3) AlP Ga(CH3)~ ~ SbH3 ~ SiH4 ~GaP) (AlP)xSiyGe (3) AlP Ga(CH3)3 ~ PH3 & SiH4 &

(AlAs)l_x Six AlAs SiH4 or SiC14 ~ :
(AlAS)l-x Gex( ) AlAs GeH4 or Ge(CH3)4 : . .
(AlSb)l_x Six( ) AlSb SiH4 or SiC14 (AlSb)l_X Gex(l) AlSb GeH4 or Ge(GH3)~ :
(AlP)l_X s~X(l) AlP SiH4 or Ge(CH3) (AlP)l-X Gex AlP GeH4 or Ge(CH3)4 Al As Siz(2) Al AsH3 & SiH
Alx Asy Gez(2) Al AsH3 & GeH
Al Sby Siz(2) Al SbH3 & SiH4 :~
Al Sb Gez(2) Al SbH3 & GeH~
Alx Py Si~t2~ Al PH3 & SiH4 Alx P Ge~(2) Al PH3 ~ GeH4 Alv Asx Siy Ge (3) Al AsH3 & SiH4 & GeH4 i.
Alv Sb Siy Gez(3) Al SbH3 & SiH4 & GeH4 Al Px Siy Ge t2) Al PH3 ~ SiH4 & ~eH4 ~ :
(AlAs)x Siy Ge AlAs SiH~ & GeH4 (AlSb)X Siy Ge (2) AlSb SiH4 & GeH4 (1) Where x is a number greater than about 0.01 and x ~ x) (2) Where x, y and z are numbers greater than abou~ 0.01 and x t y + z ~ 1 .... .
: ~3) Where v, xt y snd z are numbers greater than about 0.01 and ,, v + x ~ y ~

~. -32-"'' ~4,667 . ~
Sputter Reactive -~arget Gas Solid Soluti~n Composition Composition Composition (AlP)X Si Ge (~) AlP SiH4 & GeH4 (AlAs)l x (InAs)x(l) AlAs AsH3 & In(CH3)3 (AlSb)l x (InAs)x( ) AlSb AsH3 & In(GH3)3 (AlP)l_X ~InA )x AlP AsH3 ~ In(CH3)3 .
(AlAs)l x (InSb)x(l) AlAs SbH3 & In(CH3~3 (AlSb)l x (InSb)x( ) AlSb SbH3 & In(CH3)3 (AlP)l_X (InSb)x(l) AlP SbH3 & IntCH3)3 ~-(AlAS)l-x (InP)x(l) AlAs PH3 & In(CH3) (AlSb)l_X (InP)x(l) AlSb PH3 & In~CH3) ~AlP)l-x (InP)xtl) AlP 3 3~3 (AlAs)x (InAs)y Siz(2) AlAs AsH3 h In(CH3)3 ~ SiH
(AlAs)x (InAs) Ge (2) AlAs AsH3 & In~CH3)3 & GeH4 (AlSb) ~InAs)y Si (2) AlSb AsH3 ~ In(CH3)3 ~ SiH4 (AlSb)X (InAs)y Ge7(2) AlSb 3 & In(CH3)3 & GeH4 (AlP) (InAs) Si (2) AlP AsH3 & In(CH3)3 ~ GeH4 (AlP)~ (InAs) Gez(2) AlP AsH3 & In(CH3)3 6 GeH4 (AlAs) (InAs)x Siy Gez(3) AlAs As~3 ~ In(CH3)3 & 4 ,~ :

(AlSb) (InAs)xSiyGe (3) AlSb AsH~ & In(CH3)3 4 ~AlP)v(lnAs)xsi 6e (31 AlP 3 Ge(C( )3)3 4 (1) Where x is a number greater than about 0.01 and x + (l-x) (2) Where x, y and z are numbers greater than abou~ 0.01 and :~
, x + y + z ~ 1 (3) Where v, x, y and z are numbers greater th~n abou~ 0.01 and v + x + y + z ~ 1 ' '~
: 33 , , : ,. : ~ .
.~: ' .

~,667 .` ~

TABLE II (Cont.~
Sputter React~ve Target Gas Solid Solution _omposition Composition ~ :~
(AlAs)x(InSb)y Si ( ) AlAs In(CH3)3 ~ Sb(CH3)3 h tAlAs)x(InSb)yGe (2) AlAs 4 (AlSb) (InSb)ySi (2) AlSb In(CH3)3 h Sb(C~3)3 ~ SiH4 (AlSb)x(InSb)yGPz(2) AlSb In(CH3)3 6 Sb(CH3)3 ~ GeH4 (AlP)X (InSb) Siz(2) AlP In(CH3)3 ~ Sb(CH3)3 ~ SiH4 (AlP)X (InSb)y Gez(2) AlP In(CH3)3 h Sb(CH3)3 & GeH
(AlAs)v(InSb)xSiyGez(3) AlAs 6(CH3)3 G Sb(CH3)3 ~ SiH4 (AlSb)v(InSb)xSiyGez(3) . AlSb In(CH3)3 & Sb(CH3)3 h Si 4 (AlP)v(InSb)xSiyGez(3) AlP In(CH3)3 & Sb(C 3)3 4 (AlAs)x (InP)y Siz(2) AlAs In(CH3)3 & PH3 & SiH4 (AlAs)x (InP)y Ge (2) AlAs In(GH3)3 h PH3 & GeH4 (AlSb) (InP)y Siz(2) AlSb In(CH3)3 h PH3 ~ SiH4 ;
(AlSb)X (InP)y Gez(2) AlSb In(CH3)3 & PH3 & GeH4 (AlP) (InP)y Si (2) AlP In(CH3)3 h PH3 & SiH4 (AlP)X (InP)y Gez(2) AlP In(CH3)3 & PH3 & GeH4 .
(AiAs)v(InP)xSiyGe7(3) AlAs In(CH3)3 & PH3 4 (AlSb)v(InP)xS~yGez(3) AlSb In(CH3)3 & PH3 & SlH4 &

: ,,,, ~
' (2) Where x, y and z are numbers greater than about 0.01 and .~ x ~ y f z = 1 :~ (3) Where v, x, y and z are numbers greater than about Q.Ol and `. V ~ X + y + Z a 1 : ' ' ;:: 34-.. ; ' .
, ' , 44,667 .,''' TABLE II ~Con~,~
Spu3~ter Reactive Target Gas Solid Solution Compositi~n Composition Composition (Alp)v(lnp)xslyGez(3) AlP In~CH3)3 ~ PH3 & SiH4 & GeH4 ;
Inx Asy Sl~(2) In AsH3 & SiH~
Inx Asy Ge~(2) In AsH3 ~ GeH4 ~x Sby Siz(2) In SbH3 & SiH4 ~:~
In Sby Gez(2) In SbH3 ~ GeH4 Inx Px Si In PH3 6 SiH4 In Px Gez(2) In PH3 & GeH4 Inv Asx Siy Gez(3) In AsH3 & SiH4 & Ge~4 ~; :
Inv SbX Siy Gez(3) In SbH3 & SiH4 & GeH
Inv Px Siy Gez(3) In PH3 6 SiH4 & GeH4 t~nA8~l-x Six(l) InAs SlH4 or 5iC1 (InAS)l-x Gex( ) InAs GeH4 or Ge(CH3)4 (InSb)l_x Six InSb SiH4 or SlC14 (InSb)l x Gex(l) InSb GeH4 or Ge(CH3)4 -:
(InP)l x Six(l) InP SiH4 or SiC14 (InP)l_x Ge~(l) InP Ge~4 or Ge(cH3)4 ~ :
(InAs)x Sly Gez(2) InAs SlH4 & GeH4 ; - :
tInSb)x Siy Ge~(2) InSb SiH4 6 GeH~ ~
(InP)x Siy Gez(2) InP SlH4 6 GeH4 ; ~:
(GaAs)vGaxA~ySi~(3) GaAs or Ga Ga(CH3)3 6 AsH3 6 SiH4 ~ .
, . . .
3 - . _ _ _ here x i8 a number greater than about 0.01 and x + (l-x) ~ 1 (2) Where ~, y and z are numbers greater than about 0.01 and x + y + z ~ 1 . (3) Where v, x, y and z ara numbers greater than about 0.01 and -, v ~ x + y ~ z ~ 1 : -35-~ 4,667 ~591!~0 : ~ .
TABLE II ~Cont~
Sputter Re~c~ive : ~:
Target Gas - Solid Solut~on Composi~ion Composition Composition .
(GaSb) Ga As Si t3) GaSb or Ga Ga(CH ) & AsH & SiH or ~ ~:
: y x y ~ Ga(CH3)3 & SbH33 6 AsH3 & ~ :
SiH, .: -:',`
~'(GaP)vG~AsySiz~3) GaP or Ga Ga(CH3)3 h AsH3 & SiH4 or ( 3)3 & PH3 & AsH3 & :~ -(AlAs) Ga~AsySiz(3) AlAs Ga(CH3)3 & AsH3 & SiH4 :.
(AlSb)yGa AsySi~3) AlSb Ga(CH3~3 & As~3 & SlH4 1 (AlP)~Ga~As Sl ~3) AlP Ga(CH3)3 & A8H3 & SiH4 ~ , '~ (InAs)vGa~ s Siz(3) InAs or Ga Ga(CH3)3 & AsH3 & SiH4 or Y In(CH3)3 h AsH3 & SiH
~InSb) Gs A6 Sl ( ) InSb or Ga Ga(CH3)3 ~ A6H3 & SiH4 ~r v x y z In(CH )3 & SbH3 & AsH

~j: (InP) Ga As Si (3) InP or G,a ( 3)3 & As~13 & SiH4 or v x y z In(cH3)3 & PH3 & A~3 &

(GaAs)vGa,~AsyGez(3) GaAs or Ga Ga(CH3)3 & A~H3 6 GeH4 or Ga(CH3)3 & AsU3 ~ G~4 ~ GaSb)vGa As Gez(3) GaSb or Ga ( 3)3 & AsH3 & Ge~4 or ;. : ~ GGa(CH3)3 & sba3 ~ AaH3 & :
~' (Gap)~Ga ~ Ge (3) GsP or Ga Ga(CH3)3 & AsH3 & GeH4 or :~
x y æ Ga(CH3)3 & P~3 & AsH3 ~ .
.:i 4 :`~
.~ (AlAs)vGa AsyGez(3) AlAs Ga(CH3)3 & AsH3 & GeH~
:', (AlSb)vGaxAsyGez(3) AlSb Ga(CH3~3 & AsH3 & GeH4 ;~ (AlP)vGaxAsyGez(3) AlP Ga(CH3)3 ~ AsH3 & GeH
(InAs)vGa A~ Gez~3) InSb or Ga Ga(CH3)3 & As~3 & GeH4 or :~j x y In(CH3)3 h A8H3 & GeH4 :
, ., . :

(3) Where v, x, y and z are numbers ~reater than about O.Ol snd .. ,~ v ~ r t z Y 1 i ., ~
:::
^ - -36-, :
:
:

44,~67

5~
, : ~5~
Spu~ter Reaetlve Target Gas Solid SoIution Composl~ion ~ ~ tion (InSb)vGaxAs Gez(3) InSb or Ga Ga(CH3)3 & ABH3 6 GeH4 or In(CH3)3 6 SbH3 ~ A8H3 ~ :

(InP)vGaxAsyGez(3) InP or G~ Ga(CH3)3 & As~3 6 GeH4 or In(CH3)3 ~ PH3 & AsH

(GAAs)uGa~ sxSiyGez~4) G~A~ or Ga Ga(C~3)3 6 A8H3 & SiH4 & .~
G~(C~3)3 ~ A8H3 6 S~H4 & ~ ;
(GaSb)uGAvAsxSi Geæ(4~ GaSb or Ga Ga(CH~)3 6 A8H3 ~ S~H4 ~
GatC~3)3 & SbH3 & AsH &
~: SiH4 ~ GeH4 3 (GaP)uGavAsxSiyGez~4) GaP or G~ G (CH3)3 & AsH3 6 SlH4 :~ 4 : Ga(CH3)3 & PH3 & AsH &
î SiH4 ~ GeH4 3 ~ :
' (AlAs) Ga AsxSlyGez(4) AlAs Ga(CH3)3 & A3H3 ~ SiH
: 4 ::~
,~ ~AlSb) Ga AsxSlyGezl4) AlSb G (CH3)3 & A8H3 & SlH4 &
.~: 4 ;. (AlP)uGa AsxS~yGe~(4) AlP G (CH3)3 & A8H3 & S1H4 &
~': ~ .
(InAs)uG2vAsxSiyGez(4~ InAs G (CH3)3 & As~3 ~ Si 4 .: 4 (InSb)uGavA~xSi~Ge~(4) InSb G (C~3~3 & A8H3 & SiH

(InP)uGa~ s~SiyGez(4) InP G (Ca3)3 ~ ~H3 ~ S1H4 (GaA~)vA ~AsySiz(3) GaAs Al(C~3)3 ~ A~3 & SlH4 ,.

(3) Where Vr X, Y 8nd z are number~ greater than ~bout 0.01 and ,., v + x ~ y ~ z ~
;~ (4) Where u, v, x, y and z are numbers greater than about 0.01 and u t v t x + y ~ z ~ 1 . -37-,' - 44,667 :`
TABL ~
Sputtes Reactive Target Gas Solid Solution Composition ~ Compositlon (GaSb)vAl A~ySi t3) GaSb AltCH3)3 & AsH3 & SiH4 (GaP3vAlxAsy~iz(3) GaP Al(CH3)3 ~ AsH3 & SiH4 ~ ;~
(AlAs)yAlxAsySiz(3) AlAs Al~CH3)3 6 AsH3 & SiH4 (AlSb)vAl AsySiz(3) AlSb Al(CH3)3 & AsH3 & SiH4 (AlP) Al As Si (3) AlP Al(CH3)3 6 A~H3 & SiH4 ~ :
.~ ~InAs) AlxAsySi~(3) InAs Al(CH3)3 & AsH3 6 SiH4 :-' (InSb)vAlxAsySiz(3) InSb Al(CH3)3 ~ AsH3 & SiH4 :~
1 (InP)vAl AsySiz(3) InP Al(CH3)3 & AsH3 & SiH4 ,j (GaAs)vAlxAsyGe (3) GaAs Al(CH3)3 & AsH3 & SiH4 (GaSb) AlxAsyGez(3) GaSb Al(CH3)3 & AsH3 & SiH4 . (GaP) Al AsyGez(3) GaP Al(CH3)3 6 AsH3 ~ SiH4 ~ :
: (AlAs)vAlxAs Gez(3) AlAs Al(CH3)3 & AsH3 ~ SiH
.~ (AlSb) Al A~ Ge (3) AlSb Al(CH3)3 & As~3 & SiH4 (AlP)vAlxAsyGe ~3) AlP Al~CH3)3 & AsH3 & Si~4 (InA~)vAlxAsyGe~(3) InAs Al(CH3)3 & AsH3 & GeH4 ~,:
tInSb)vAlxAsyGez(3) InSb Al(CH3)3 & AsH~ & ~e~4 InP)vAlxAsyGez(3) InP Al(CH3)3 ~ AsH3 ~ GeH4 (GaAs)uAlvAsxSi Ge (4) GaAs Al(CH3)3 & AsH3 ~ S 4 ; (GaSb)uAlvAsxSiyGez(4) GaSb Al(GH3)3 S AsH3 ~ Si~4 6 ~ (GaP)uAlvAsxSi Ge (4) GaP AlgCH3)3 & AsH3 ~ SiH4 &
:-; 4 ''''' :~

' (3) Where v, x, y and z are numbers greater than about 0.01 and '.~ v + x + y t z ~ 1 (4) Where u, v, x, y and z are numbers greater than about 0.01 and ~, u + v + x t y ~ z = 1 ; -3~-' ., ,~ ` 44~6~7 ~59~

Sput~er Reactlve Target Gas Solid Solution Composition Com~osition ComRosition (AlAs)uAlvAsxSi~Gez(4) ALAs Al(CH3)3 & AsH3 & SlH4 (AlSb)uAlvAsxSiyGez~4) AlSb Al(CH3)3 & AsH3 & SiH4 (AlP) AlvAs Si Gez(4) AlP Al(CH3)3 & AsH3 &

)u vA x y æ InAs Al(CH3)3 & As~3 & 4 (InSb)uAlvAsxSiyGez(4) InSb GeH 3)3 & AsH3 & SiH4 (InP) AlvAsxSiyGe~4) InP Al(CH3)3 & AsH3 & S 4 (GaAs~vInxARyS~z(3) GaAs In(CH3)3 & AsH3 & SiH4 ~GaSb)vInxAsySiz(3) GaSb In(CH3)3 & AsH3 & SlH4 (GaP)vInxAsySiz(3) GaP In(CH3)3 6 A9H3 6 SiH4 (AlAs)vIn AsySiz(3) AlAs In(CH3)3 & A~H3 & SiH
~AlSb)vInxAsySiz(3) AlSb In(CH3)3 & A9H3 ~ ~iH4 (AlP)vIn AsySi (3) AlP In(CH3)3 ~ AsH3 ~ sia4 (InAs)vInxAsySi (3) InAs In(CH3)3 & AsH3 & SiH
(InSb)vInxAsySiz(3) InSb In(CH3)3 & AgH3 ~ S~H4 (InP)vInxAsyS~ t3) InP In~CH3)3 ~ AsH3 & SiH4 (GaAs)vInxAsyGe (3) GaAs In~CH3)3 & AsH3 & GeH4 (GaSb)vInxAsyGez(3~ GaSb In(CH3)3 & AsH3 & GeH4 (GaP)vInxAsyGez(3) GaP In(CH3)3 & A8H3 ~ GeH4 !
~3) Where v, x, y and z are numbers greater than sbout 0.01 and ', , v + x + y + z c 1 :` (4) Where u, v, x, y and z are numbers greater than about 0.01 and ~ u t- v ~ x + y + z ~ 1 . , "
~, -39-, . , .

": 44,667 .' ,~. ~' .
TABLE II _(Cont.) Sputter Reactive ~ : :
Target Gas ;: . -:
Solid Solution Co ~o ltion Composition Composit.ion " : :-(AlAs) InxAsyGez(3) AlAs In(CH3)~ & AsH3 & GeH4 ~AlSb)vInxAsyGez(3~ AlSb In(CH3)3 & AsH3 ~ GeH4 :~
(AlP)vIn AsyGez(33 AlP In(CH3)3 & AsH3 & GeH4 (InA~)vInxAsyGez(3) InAs In(CH3)3 ~ AsH3 & GeH4 : ; .
(InSb)vInxAsyGez(33 InSb In(CH3)3 & AsH3 & GeH4 ~ :-(InP)vInxAsyGe~(3) InP In(CH3)3 L A8H3 & Ge~
(GaAs)uInvAsxSiyGez(4) GaAs In(CH3)3 & AsH3 ~ SiH4 ~
tGaSb)uInvAsxSiyGez~4) GaSb I (CH3)3 & AsH3 & SiH4 &
(GaP)uInvAsxSiyGe (4) GaP In(C~3)3 & AsH3 & S 4 (AlAs)ulnvAsxSiyGe (4) AlAs IntCH3)3 & AsH3 & Si 4 (AlSb)uInvAsxSiyGez(4) AlSb In(CH3)3 & AsH3 & SiH4 &
(AlP)uInvAsxSl Gez~4) AlP In(CH3)3 & AsH3 & 4 (InAs)uInvAsxSi Gez(4) InAs In(CH3)3 & AsH3 ~ SiH4 &
.: -(InSb)uInvAQxSlyGez(4) InSb IntcH3)3 ~ AsH3 ~ SiH4 &
; (InP)uIn ~ sxSiyGezt4) InP In(CH3)3 & AsH3 & SiH

(InAs)vInxAsySbz(3) InAs In(CH3)3 & AsH3 & SbH3 4 ~
.~"' -- ' ' '' .
(3) Where v, x) y and z are numbers greater than about 0.01 and ,~, ' v ~ x ~ y + z ~ 1 . (4) Where u, v, x, y and z are numbers greater than about 0.01 and ''- u ~ v ~ x t y t z = 1 .

: -40~

,~

~ ~4,~67 ~5~

TABLE II tCont,?
Sputter Reactive Target Gas Solid Solution Com~osition 5~ syy~
(InSb)vInxAsySb (3) InSb In(c~l3)3 6 As~3 & S 3 (InP)vIn As Sbz(3) InP In(C~3)3 & AsH3 & SbH3 (GaAs)vUb AsySbz(3) GaAs In(CH3)3 & AsH3 ~ SbH3 (GaSb) In AsySbz(3) GaSb In(CH3)3 & AsH3 & SbH3 .. (GaP)vIn As Sb (3) GaP In(CH3)3 ~ AsH3 & SbH3 , (AlAs)v Inx Asy Sbz(3) AlAs In(CH3)3 & AYH3 & SbH3 ., (AlSb)vInxAsySb (3~ AlSb In(CH3)3 & AsH3 & SbH3 (AlP)vIn AsySb (3) AlP In(CH3)3 & AsH3 ~ SbH3 ~ (InAs~ulnvAsxSbySiz(4) InAs In(CH3)3 ~ AsH3 & SbH3 :~ (InSb)uInvAsxSbySiz(4) InSb In(CH3)3 & AsH3 & Sb 3 (InP)uInvAsxSbySi2(4) InP In~CH3)3 & AsH3 & SbH3 (GaAs)uInvAsxSbySi (4) GaAs In(CH3)3 & AsH3 & 3 (GaSb)uInvAsxSbySiz(4) ~aSb In(CH3)3 & AsH3 & SbH3 (GaP)uInvAsxSbySiz(4~ GaP In(CH3)3 ~ AsH3 ~ SbH

(AlAs)uInvAsxSbySi (4) AlAs In(CH3)3 & AsH3 & SbH3 (AlSb)uIn~As Sb Siz(4) AlSb In(CH3)3 6 AsH3 & SbH
:. 4 ;~ (AlP)U In As Sb Si (4) AlP I (CH3)3 & ~sH3 & SbH

:- -`
:~ (3) ~here v, x, y and z are numbers greater than about 0.01 and,. ,' . v + x ~ y + z = 1 (4) Where u, v, X9 y and z are numbers greater thsn about 0.01 and :' u + v + x ~ y +

, ,, ~1 :
'.' : - : .
.

-~ 44,667 :' ';, 5~8~

'.: ~ , Sputter Reactlve .
Target Gas Solid Solution _o~position Com~osi ion Composition tInAs) InvAsxSbyGez(4~ InA~ In(CH3)3 & A~H3 & SbH3 &

(InSb) InvAsxSb Ge (43 InSb In(CH3)3 & AsH3 & SbH3 & .

(InP) InvAsxSb Ge (4) InP In(CH3)3 & AsH3 & SbH3 &

(GaAs)uInvAsxSbyGez(4) GaAs In(CH3)3 & AsH3 & SbH3 &

(GaSb)uInvAs SbyGe (4) GaSb In(CH3)3 & AQH3 & 3 (GaP) In As Sb Ge (4) GaP In(CH3)3 & AsH3 & SbH3 & ~;~

(AlAs)uInvAsxShyGez(4) AlAs In(cH3)3 & AsH3 & SbH3 ~: :

(AlSb)uInvAsxSbyGez(4) AlSb Ge( H3)3 & A8H3 h SbH3 &

(AlP) InvA~ySbyGe (4) AlP In(CH3)3 ~ AsH3 & SbH3 ~ ~ .

(InAs)~InuAsvSbxSiyGe (5) InAs In(CH3)3 & AsH3 6 3 (InSb)~lnuAsvSbxSi 6e (5) InSb In(CH3)3 & AsH3 & SbH

tInP)tInuAsvSb S1 Ge (5) InP SiH4 & GeH34 3 (GaAs)tInuAs SbxSi Gez(5) GaAs SiH H3)3 h GeH3 3 (GaSb)tIn AsvSbxSiyGe~(5) GsSb SiH 3~3 & GeH3 3 (4) Where u, v, x, y and z are numbers greater than about 0.01 snd u + v + x + y + z ~ 1 ' .
(5) Where t, u, v, x, y and z are numbers greater than about 0.01 and t + u + v + x + y ~ z ~ 1 , . ,, ,~ .

., . ' ' ~ '~ 44,657 8~
,, -:

TA~LE II (cont.?
~: Spueter Reactive ~.
:: Target Gas - 5~1~9 5~ 9~_C~Y~ æosi~on ~ 15lEL
.
(GsP)tIn A6vSbxSlyGez(5) G~P In(CH3)3 & AsH3 & 3 (AlAs3 In As Sb Si Ge (5) AlA~ In(CH ) ~ AsH3 & SbH
t u v x y z SiH4 3 3 6 GeH4 3 (AlSb~tInuAqvSbxSiyGez(5) AISb In(CH3)3 & AsH3 ~ SbH

(AlP)tIn ASvsbxsiyGe (5~ AlP In(C~3)3 & AsH3 ~ SbH3 (InAs) Al As Sb (3) InAs Al(CH3)3 & ABH3 & SbH
(InSb) Al AsySb~(3) InSb Al(CH3)3 & AsH3 ~ Sba3 (InP) A1xAs Sbz(3) InP Al(CH3)3 ~ AsH3 ~ SbH
(G~s)vAlxAs Sb (3) GaAs Al~CH3)3 & A8H3 & Sb~3 (GaSb) A1 As Sb (3) GaSb Al(CH3)3 & A3H3 & SbH3 (GaP)vAl AsySbz(3) GaP Al(CH3)3 & A5H3 & SbH3 (AlAs)vAlxA~ySbæ(3) ~lAs Al(CH3~3 & AsH3 6 SbH3 tAlSb)vAl AsySbz(3) AlSb Al(CH3)3 & A9H3 ~ Sb~3 tAlP)VAl A~ySbz(3~ AlP Al(CH3)3 & A3H3 ~ SbH3 (InAs) AlvAs Sb Si (4) InAQ Al(CH3)3 ~ A~H3 ~ SbH3 (InSb) Al As SbyS1 (4) InSb Al(CH3)3 ~ AsH3 & SbH3 (InP)uAlvAsxSbySl~(4) InP A1tCH3)3 & A8H3 & SbE3 (GaAs)uAl~As SbySiz(4) GaAs Al(cH3)3 & A6H3 & Sb~3 t3) Where v, x, y and z are numbers greater than abou~ 0.01 and ;~ V ~ X + y ~ Z e 1 ~
(4) Where u, v, x, y and z are numbers greater ~han about 0.01 and ~:
", u ~ v ~ x ~ y ~ z ~
: (S) Where t, u, v, x, y ~nd ~ are numbers greater than about 0.01 and ~ + u + v + x + y ~ z - 1 ; . -43-'' .

44,~67 ~

~5~

. TABLE II ~
Sput~er Reactive :: Target GAS
Solid Solution Composltion Compo~ition (GASb) AlvAsxSbySiz(4) GaSb Al(CH3)3 ~ A6H3 & SbH3 ; (GaP) Al A~XSbySi ( ) GaP Al(cH3)3 & AsH3 & 3 . (AlAs) AlvAsxSbySiz(4) AlAs Al(CH3)3 & As~3 & 3 ~ ~ :

;- (AlSb) AlvAsxSbySi ( ) AlSb Al(CH3)3 & AsH3 & SbH3 &

(AlP)uAlvAsxSbySiz(4) AlP Al(CH3)3 & AsH3 ~ S 3 ~ ;

1 (InA ) Al AsxSbyGez(4) InAs Al~CH3)3 & AsH3 3 el (InSb)uAlvAsxSbyGe~(4) InSb Al(CH3)3 & AsH3 & SbH3 &

~ (InP)uAlvAsxSb Ge (4) InP Al(CH3)3 ~ AsH3 & SbH3 &

.' (GaAs) AlvAs Sb Ge (4) GaAs Al(CH3)3 ~ ~s~3 6 SbH

.-, (GaSb) AlvAsxSbyGez(4) GaSb Al(CH3)3 & AsH3 & SbH

3~ (GaP~uAlvAsxSbyGez(4) GaP Al(CH3)3 ~ AsH3 & 3 -~ (AlAs)uAlvAsxSbyGe (4) AlAs Al(CH3)3 ~ AsH3 ~ Sb~3 6 ~ ~ .

; (AlSb)uAlvAs~Sb Ge (4) AlSb Al(CH3)3 & A8H3 ~ 3 (AlP)uAlvAs Sb Ge (4) AlP Al(CH3)3 & AsH3 ~ 3 . (InAs)tAluAsvSb SlyGez(5) InAs SiH 3)3 ~ AGsH3 & SbH3 & :

`.~ (4) Where u, v, x, y and z are numbers grea~er ~han sbout 0.01 and u + v + x + y ~ z - 1 (5) Where t, u, v, x, y and z are numbers greater than about 0.01 ~nd t + u ~ v + x + y + z ~ 1 "

,667 -TABLE II (Cont.) Sputter Reaetive Target Gas Solid Solution Composition Composition Compositlon (InSb)tAluAsvSbxSiyGe (5) InSb Al(C~3)3 & As~H3 3 (InP)tAluA~vSbxSiyGe (5) InP Al~CH3)3 ~ AsH3 6 SbH3 (GaAs)tAluAsvSbxSiyGez(5) GaAs Al(CH3)3 & GsH3 3 (GaSb)tAluAsvSbxSi Gaz(5~ GaSb Al(CH3)3 & AsH3 ~ SbH

(GaP)tAl AsvSbxSiyGez(5) GaP Al(CH3)3 ~ AsH3 & SbH3 (AlAS)tAluAsvsbxsiyG~ ) AlAs Al(CH3)3 ~ AsH3 h 3 tAlSb)tAl AsvSbxSi~Gez(5) AlSb Al(CH3)3 ~ AsH3 & SbH3 (AlP)tAluAYvsbxsiyGez(5) AlP Al(C~3)3 & GA~H3 ~ 3 (InAs)yGa AsySbz~3) InAs Ga(CH3)3 & A8H3 ~ SbH3 (InSb)vGa As Sb (3) InSb Ga(Ca3)3 & AsX3 & SbH3 (InP)vGaxAsySbz(3) InP Ga(CH3)3 6 A6H3 ~ SbH3 (GaAs) Ga A8 Sb (3) GaAs Ga(CH3)3 & AsH3 & SbH
(GaSb) GaxAsySbz(3) GaSb Ga(CH3)3 ~ As~3 & SbH
(GsP)vGa AsySbz(3) GaP Ga(CH3)3 & AsH3 & SbH3 (AlAs) Ga As Sb (3) AlAs Ga(CH3)3 & AsH3 & SbH3 (AlSb)vGa Asysb (3) AlSb Ga~CH3)3 & AsH3 & SbH3 (AlP)vGaxAsySb (3) AlP Ga(CH3)3 ~ AsH & SbH3 ~
(3) ~here v, x, y and z are number6 greater than about 0.01 and , v + x ~ y + ~ = 1 .
(5) Where t, u, v, x, y and z are numbers greater ~han sbout 0.01 and ~ ~ u ~ v + x ~ y + z ~ 1 ,',' : - -45-44,667 : ~ ~ 5 ~
. ~

. ' . Sputter Reactive Target Gas 5 ~gL~ 5~99LL~9sl5~9r Compo~ition (InAs)uGa AsxSbySiz(4) InAs Ga(CH3)3 & A~H3 & SbH3 &

(InSb) GavAsxSbySiz(4) InSb Ga(CH3)3 6 A8H3 3 (InP) Ga AsxSbySiz(4) InP. Ga(CH3)3 6 As~3 & 3 (GaAs) Ga As 5bySi~(4) GaAs Si( 3)3 3 3 ~ :.
1 (GaSb)uGavAsxSbySi (4) GaSb Ga(CH3)3 ~ AsH3 & SbH3 &

` (GaP) Ga A8XSb Si (4) GaP Ga(CH3)3 & ABH3 3 (AlAs)uGavA9xSbySiz AlAs Ga(CH3)~ & AsH3 & SbH3 &

~`' (AlSb)uGavAsxSbySiz(4) AlSb Ga(CH3)~ & AsH3 & 3 ;;O (AlP)uGsvAsxSbySi (4) AlPGa(CH3)3 & AsH3 $ SbH3 &

(InAs)~GauAsvSbxSiyGe (5) InAs Ga5CH3)3 ~ GSa3 3 ;~ (InSb)tGa AsvSb Si Gez(5) InSbGa(CH3)3 & AsH3 & SbH3 & :~
.: 4 4 (InP) Ga A~ Sb Si Ge (5) InP Ga(Ca ) & AsH & SbH &
t u v x Y Z SiH 3 3 ~ GeH3 3 ;.~ 4 4 :~
(GaAS)tGauAsvsbxsiyGez( ) GaAs SiH4 3 3 & GeH3 3 (GaSb)tGauAsvSbxSiyGe~( ) GaSb Ga(CH3)3 & GsH3 3 ., ~
~ (4) Where u, v, x, y and ~ are number6 greater than about 0.01 and : ' u + v ~ ~ + y t z = 1 . ' ~ (S) Where t, u, v, x, y and z are numbers greater than about 0.01: and t + u ~ v ~ x ~ y ~

. - , . . .

. -``` 44,6~7 ~:

~5~

TABL~ II (Cont.~
: 5putter Reac~lve Tar~et Gas (GaP~tGauAsvSbxSi Ge (5) GaP Gs(cH3)3 ~ AsH3 ~ Sba3 (AlAs)tGauAsvSbxSiyGe (5) AlAs Gat~H3)3 ~ A ~ ~ SbH3 ~AlSb)tGa As Sb SiyGe (5) AlSb SGi~CH3)3 ~ GeH3 3 (AlP)tGauAsvSb SiyGez(5) AlP Si( 3)3 ~ AGsH3 & SbH

In Sby Asz(2) In SbH3 & AsH
; In P As (2) In 3 3 ~ ~
Inx Py Sb (2) In PH3 & SbH3 -~ . :
Gax Sby Asz(2) Ga SbH3 & AsH3 Ga P As (2) Ga PH 6 AsH
x y z 3 3 Ga Py Sb (2) Ga PH3 6 Sb 3 Al Sb As~(2) Al SbH & AsH ;
Al P A8 (2) Al PH ~ AsH ;~
x y z 3 3 Al P Sb (2) Al PH3 & SbH3 In SbxAsySiz~3) In SbH3 6 AsH3 & SiH4 ~ .
; InvPxAs Si (3) In PH3 6 As~3 & SiH4 : :
In P Sb Sl (3~ In PH ~ SbH & SiH
: v x y ~ 3 3 4 Ga SbxAs Siz(3) Ga SbH3 ~ AsH3 ~ SiH4 Ga P As ~i (3) Ga PH h AsH & SiH
v ~ y z 3 3 4 (2) Where x, y and z are numbers greater than about 0.01 and x + y + z ~ 1 ; ?
(3~ Where v, x, y and z are numbers greater than about 0.01 and v + x + y ~ z = 1 (5) Where t, u, v, x, y and z are numbers greater than about 0.01 and ~ + u + v + x -~ y + z ~ 1 ;
, .

.

t 4~,667 ~, ~L~5g~

TABLE II (Cont ?
Sputter Rea~tive :: Targe~ Gas ~
Solid 501ution Composition Composition Composition -:
GavP SbySiz(3) GaPH3 & S~H3 & SiH4 ~`
GQVPXSb Si (3) GaPH3 & SbH3 & S~H4 Al Sb As Si (3) AlSbH3 ~ AsH3 ~ SiH
Y x y z 4 AlVPxAs Si ~3) Al 3 3 4 -~
Al P Sb Sl (3) AlPH3 & SbH3 & SiH4 : In Sb As Ge (3) In SbH3 & AsH3 ~ GeH
: v x y Z
: In PxAsyGe (3) In PH3 & AsH3 & GeH4 InvP SbyGe (3) In PH3 & SbH3 ~ GeH4 . Ga SbxAsyGez(3) Ga SbH3 & AsH3 6 GeH4 ~` Ga P As Gez(3) Ga PH3 & AsM3 ~ GeH4 ~ .
~' GavP Sb Ge (3) Ga PH3 & SbM3 & GeH4 .` ? AlvSbxAs Ge (3) Al SbH3 & AsH3 ~ GeH4 ; ~ :
-` v x y z Al PH3 & A~3 & GeH4 ~ -Al P Sb Ge (3) Al PH3 B SbH3 ~ Ge~
InuSb As SiyGez( ) In SbH3 ~ AsH3 ~ SiH4 & GeH4 :
In PvAs Si Ge (4) In 3 & AsH3 ~ SiH4 & GeH4 :~
uPvSbxSiyGe (4) In PH3 & SbH3 & SiH4 ~ GeH4 GauSbvAs Si Ge (4) Ga SbH3 & AsH3 L SiH4 & GeH
GauPvAsxSi Ge ( ) Ga PH3 ~ AsH3 & SiH4 & Ge~4 ;~
Ga P Sb Si Ge (4) Ga PH3 & SbH3 6 SiH~ & GeH~
AluSb As Si Ge (4) Al SbH3 & AsH3 & SiH4 & GeH4 (3) Where v, x, y and z are numbers greater thsn about 0.01 and .' , v + x + y + ~ - 1 (4) Where u, v, x, y and z are numbers greater than about 0.01 and ' u + v + x ~ y ~ z ~ 1 .~,, .

:

44,667 , S~

Sputter R~ctlve T~r8et Gss 1 P a~X~i Gl~ (4) Al 3 3 6 S1~4 6 Ge~4 ~luP~Sb~SiyG~ (4) Al p~3 ~ Sbll3 & S~a4 ~ Gell4 t I~ Sby Siz (2~ In Sb~3 6 sla P Sl (2) In PH3 ~ SiH4 In Ag~ S~ (2) I~ 3 4 ~ ~;
Gax Sby S~8~2) Ga Sb~3S 11 Gax P ~lzt2) Ga 3 4 Ga~ A~y Siz(2~ Ga 3 4 -~
~c Sby Siæ(2) Al 3 4 Py Si (23 ~1 P~3 & Si'~4 AlX Aay Si ~ ) AlA~{3 6 Sl~
In Sby Ge~(2) In 3 4 In ~ Ge ~2) I~ 3 4 Inx A~y Gez~2) I~AsN3 ~ GeH ~ :
Ga Sby Gez(2) G~ 3 4 G~ Py Ge ~2) GaH3 6 GeH4 Gax As Gez~2) G~
AlX Py Ge ~2~ Al 3 4 Al Sby Ge (2) AlSbl~3 & Ge~
x A~y Ge ( ~ Al ~
I~vS~xSiyGez(3) InSb~3 ~ Si~4 ~ ~eH4 ~ - :

: _.
t2) Wher8 X~ y ~nd z are nu~bers gre~er than about 0.01 ~ud x ~ y ~
~3) Whero v, x~ y and z ~re numb~r~ 8reater th~n ~'boue Q.Ol ~nd - -:~ v~x~y+ z ~ 1 :

~. S4) Nbere u, V9 X~ y and z Are nu~bers ~re~t2r thsn about 0.01 ~nd ',' u ~ v + as + y ~
' ~9 .

-- ~ 44~667 ~135~8~

TABLE II (Cont.) Sputter Reactlve Target Gas Solid So1utlon Composition Composition ~5~ E~
In P SiyGez(3~ In 3 ~ Si~4 h GeH4 In As~SiyGe ( ) In AsH3 ~ SiH4 ~ GeH4 GavSbxSiyGe (3) Ga SbH3 ~ SlX4 ~ GeH4 GavPxSi Gez(3) Ga PH3 ~ SiH4 6 GeH4 ~
Ga AsxSi Gez(3) Ga AsH3 & SiH4 ~ GeH4 : ;
AlvPxSiyGe~(3) Al PH3 6 SiH4 & GeH4 AlvSbxSiyGe ~ ) Al SbH3 & SiH4 & GeH4 ~ :
AlvAsxSi GPZ~3) Al AsH3 & SiH4 & GeH4 (InAs)vInxSbyS~z(3) InAs In(CH3)3 ~ SbH3 ~ SiH4 :
(InSb~vInxSbyS~z(3) InSb In(CH3)3 & SbH3 ~ SiH4 (InP) InxSbySi (3) InP In(CH3)3 & SbH3 ~ SiH4 :
(GaAs) In SbySi (3) GaAs In(CH3)3 & SbH3 & SlH4 (GaP)vIn SbySiz(3) GaP In(CE13)3 ~ SbH3 6 SiH4 i (GaSb)vIn Sb Siz(3) GaSb In~CH3)3 ~ SbH3 ~ SiH
(AlP)vIn SbySi (3~ AlP In(CH3)3 & SbH3 ~ SiH4 (AlSb) InxSb Si~(3) AlSb In(CH3)3 & SbH3 ~ S~H4 (AlA~)vInxSbySiz(3) AlAs In(CH3)3 & SbH3 & SlH4 :
(InAs)vIn 5b Gez(3) InAs In(CH3)3 ~ SbH3 6 Ge~
(InSb)vIn SbyGe (3) InSb In(CH3)3 & SbH3 ~ GeH4 (InP)vInxsb~Gez(3) InP In(CH3)3 & SbH3 ~ GeH4 (GaAs)vIn Sb Ge (3) GaAs In(CH3)3 & SbX3 & Ge~14 ~:
(GaP) InxSbyGe (3) GBP In(CH3)3 ~ SbH3 & GeH
(GaSb) In SbyGez(3) GaSb In(CH3)3 ~ SbH3 & GeH4 :
:, :

(3) Where v, x, y and z are numbers gr~ater than about O.Ol and v ~ x ~ y + z ~ 1 ~50-.: - . , . : , ~ :
~:: ,:, ' -44,667 ~05~8~
~, TABLE II (Cont.) Sputter Reactive Target Gas Solld Solution Composition Composition Composition (AlP) In Sb Si (3) AlP In(CH3)3 6 SbH3 & SiH4 (AlSb)vInxSbySiz(3) AlSb In(CH3~3 ~ Sb~3 & SiH4 (AlAs)vIn SbySiz(3) AlAs In(CH3)3 & SbH3 & SiH
(InA~)vInxSbyGez(3) InAs In~CH3)3 & SbH3 & GeH4 (InSb)~I~xSbyGez(3) InSb In(CH3)3 ~ SbH3 & GeH4 (InP) In Sb Ge ( ) InP In(CH3)3 & SbH3 & GeH4 tGaA~)vInxSbyGe (3) GaAs In(CH3)3 & SbH3 & GeH4 (GaP) In Sb Gez(3~ GaP In(CH3)3 ~ SbH3 ~ GeH
(GaSb) In SbyGe ~3) GaSb In(CH3)3 6 SbH3 & GeH4 (AlP)vIn SbyGe (3) AlP In(CH3)3 & SbH3 & GeH4 (AlSb) In SbyGe (3) AlSb In(CH3)3 & SbH3 ~ GeH4 (Al~s)vIn SbyGe (3) AlAs In(CH3)~ & SbH3 & GeH4 (InAs) InvSb Si Ge (4) InAs In(CH3~3 & SbH3 & SiH4 (InSb)uIn Sb Si Ge (4) InSb In(CH3)3 & SbH3 4 (InP) In Sb Si Ge ~4) InP In(CH3)3 ~ SbH3 & S 4 (GaAs)uInvSbxSi Ge (4) GaAs In(CH3)3 & SbH3 & SiH4 . 4 ;, :
~ (GaP)uInvSbxSiyGez(4) GaP In(CH3)3 & SbH3 & 4 :~ 4 ::
(GaSb)uInvSb Si Ge (4) GaSb In(CH3)3 & SbH3 & SiH4 & ;: :
4 ~
,: . _ , (3) Where v, x, y and z are numbers greater than about 0.01 and -;, v ~ x + y + z = 1 :~. (4) Where u, v, x, y and z are numbers grea~er than about 0.01 and :~: u + v + x ~ y ~ z ~ 1 .'`; .
~ -51-.

' , ~ . ,: ' " ~

~4, 667 S~

TABLE II ~Cont.) Sputter Reactive Target Gas Solid Solution Compos$~ion Co~osition Composition (AlP) InvSb Si Ge (4) AlP In(CH3)3 & SbH3 & SlH4 &

(AlSb) In Sb~Si Ge (4) AlSb In(CH3)3 ~ SbH3 & Si~4 S

(AlAs)uInvSbxSi Gez(4) AlAs In(CH333 & SbH3 & Si 4 :

(InAs)vAs Si Gez( ) InAs AsH3 & SiH4 ~ Ge~4 ~InSb~vAsxSiyGe ~3~ InSb AsH3 & SiH4 & GeH
(InP)vAsxSiyGez(3) InP AsH3 & SiH4 & GeH4 (GaAs)vAs SiyGe (3) GaAs AsH3 & SiH4 & G2H4 ~ :
(G~P) AsxSi Ge (3) GaP AsH3 & SlH4 & GeH4 (GaSb)vAs SiyGe t3) GaSb AsH3 & SlH4 & GeH4 ~AlP)vAs Si Gez~3) AlP AsH3 & SiH4 6 GeH4 (AlSb)vAsxSiyGe t3) AlSb 3 4 4 (AlAs)vAsxSi Gez(3) AlAs 3 4 eH4 (InA~)vSbxSi Ge (3) InAs SbH3 & SiH4 & G~H4 tInSb)vSbxSiyGe (3) InSb SbH3 S SiH4 & GeH4 (InP)vSbxSi Gez(3) InP SbH3 & SiH4 & GeH4 (GaAs)vSbxSi Gez(3) GaAs SbH3 & SiH4 & GeH
(GaP)vSbxSiyGez(3) GaP Sb~3 & SiH4 & GeH4 .
(GaSb)vSbxSiyGe ~3) GaSb SbH3 & SiH4 6 GeH4 (AlP)vSbxSiyGe (3) AlP SbH3 ~ Si~4 & GeH4 :, ~ . . ...... _ (3) Where v, x, y and z are numbers greater than about O.Ol snd " , v + x + y + z ~
(4) Where u, v, x, y and z are number~ ~reater than about O.Ol and ., u + v + x + y + x ~ 1 :
:, ' ' ~:

, , : .
. .

" 44,667 ,.

TABLE II (Co~t.
Sput~er React~ve T~rget Gas Solid Solution Composition Compo~ition Composition ~AlSb) Sb Si Gez(3~ AlSb SbH3 & ';iH4 & GeH4 (AlAs)vSbxSlyGe ~3) AlAs 3 ~ 4 (InAs)u(InSb)vInxAsySbz(4$ InAs & InSb In(CH3~3 ~ AsH3 & SbH3 ~InP) (InAs) In As Sbz(4) InP & InAs In(CH3)3 & A6H3 & Sb~
(G~As) (InSb)vIn As Sbz(4) GaAs ~ InSb In(CH3~3 & As}13 & SbH3 (GaP) (InSb)vIn A~ySbz(4) GaP & InSb In(CH3)3 ~ AsH3 & SbH
(GaSb)u(InSb)vIn AsySbz(4) GaSb ~ InSb In(CH3)3 ~ AsH3 & SbH3 tAlP) (InSb) In AsySb~(4) AlP & InSb In(CH3) ~ AsH3 h SbH3 (Al5b) ~InSb)vIn AsySbz(4) AlSb h InSb In(CH3)3 & AsH3 6 Sb~3 : : ?
(AlAs)u(InSb)vInxAsySbz(4) AlAs & InSb I~(CH3)3 & AsH3 & SbH3 (GaAs)v(InA~)xtAlAs)ysbz~3) GsAs 6 InA~ SbH3 or Sb(CH3~3 (GaAs)v(InSb)x(AlP)ySiz(3) GaAs ~ InSb SiH4 or SlCl4 ~Gasb)v(Inp)x~Alsb)yGez GaSbl b InP GeH4 or Ge(C 3)4 (GaAs)v(InAs)x(AlAs)yAsz(3) G~As 6 In~s AsH3 or As~C~3)3 ~;

(GaP)u(InSb)v( )x y & AlSb 3 3 (GsAs)u(GaSb)v(GaP)xIny(4) GaAs & GaSb In(CH3)3 & 5bH3 ,: Z
(GbaAs)u(GaSb)v(InA3)xAsy( ) GaAs & GaSb AsH ~ SbH

:; :
(3) ~here v, x, y and z are numbers greater ~han about O.Ol and v + x ~ y * z ~
~4) ~ere u, V3 X~ y and z arP numbers greater than about O.Ol and u ~ v ~ x t y ~ z ~

~ '.

-53- ~

.
.
: .

44,~67 8~ :
`;

Sputter Reactive Target Gas S~lid_Solution Composition Composition tGsAs)v(GaSb~x~lnSb)ySb~( ~ GaAIssb GaSb SbH3 (GaAs)v(GaSb)x(InP)yAsz( ) GaAs & GaSb AsH3 Si )u(GaSb)v(AlP)xA6y ) GaAs & GaSb AsH3 ~ SiH

(i AGe~t(GaSb)u(ALA8)vASx ~aAl & GaSb As~3 & SiH4 & GeH4 (G~As)v(GaSb) (AlSb) Sb (3) GaAs & GaSb SbH ; ;

(GaAs)utInSb)v(GaP)xIny(4) GaAs 6 InSb In(CH )3 & SbH3 Sb U )V ( LAs)xAsy ~ GsA6 & XnSb AsH & SbH
(GsAs)u(InSb)v(AlSb)xPy( ) GaAlsb InSb PH3 3 ,. . Z ::
As )u(lnSb)v(InP)xIny( ) GaAs & InSb In(CH ) ~ AsH

~laAs)utInsb)vtInAs)xGay(4) GaAs ~ InSb Ga(CH3)3 ~ SlH~

; 5i Ge t u )v ax ~GaAs 6 GaP Ga(CH3) 6 Si8 & GeH

; (GaAs)~(GaP)x(InP)ySiz(3) GaAs & GaP SiH4 or S~C14 ~:
i: .
)v( ~x(AlSb)yGez GaAs ~ GaP Ge(GH ) or GeH ~ ~

:~ (3) Where v, x, y and z are numbers greater than about 0.01 and ~; :
v + ~c 1 y + % ~
~: (4) Where u, v, x, y and z are mlmbers gre~ter than about 0.01 and u + v + x ~ y -t z ~
(5) Where t, u, v, x, y and z are numbers greater than about 0.01 and t ~ u + v + x ~ y + z ~ 1 ' 44,667 5~

TABLE II (Cont. 2 : Sputter Reactive T~rget Gas ~9~ Composition (InSb) (InAs) (InP)yInz(3) InSb & InAs IntCH3)3 ~ ;~

( )v(AlAs)x(AlP)~Alz( ) AlSb & AlA~ Al(CH )3 ; (BN)u(AlN)v(GaN)xInySb (4) BN & AlN In(CH3)3 & Sb~3 . :; ':
(AlN) (GaN)x(InN)ySb (3) & InN Sb 3 (G2N)~(BN)x(InN~ Si ~3) & InN 4 ;

: (InN) (AlIn) (BN) Ge ( ) InN ~ AlN 4 (4 (BP)u(InSb)y(AlSb)xAsy ) BP ~ InS~ AsH3 ~ SbH3 tAlP~ (BP) (InP) Sb (3) & InP 3 Sb )u(AlP)v(InAs)xPy( ~ AlSb & AlP
(InP)v(AlAs)xtInAs) Si (3) InP & AlA~ SiH

(AlAs)v(InSb)x(AlSb)ySbz(3) AlAs ~ InSb SbH3 ..

(InAs)v(AlSb)x(AlAs)yAsz(3) InAs & AlSb AsH3 (AlSb)v(InSb)x~InP)yGez( ) AlIbp& InSb GeH4 (InSb)u(BP)v~AlP)xSiyGe t4) InSb & BP

(3) Where v, x, y and z ara numbers greater than about 0.01 and v + x + y + z ~ 1 , , ~ .
.. . . !
; (4) Where u, v, x, y and z are numbers 8reater than about 0.01 and `~- ~
. u t v + x + y + z ~ 1 .-; ., :' :' ' '':'", ' ' , ' , ' ' '~ ~ ` ' ,, , ' , , : , :

4~,667 ~59~38~
Table II yives numerous examples of novel semi-conductor compositions which can be made by the method of the present invention and establishes that the bounds of the novel compositions which can be made by the present invention cannot be properly stated except by the inven-tive method. Beyond the scope of Table Il and the inven-tion are known and novel semiconductor and non-semiconduc-tor compositions containing Group IIb-VIa and Group IVa-VIa semiconductors such as cadmium sulfide, cadmium sele-nide, zinc oxide, tin oxide. However, lead telluride can be used with the present invention. Similarly elements from Group IIa, IVa and Va of the Periodic Table, include bismuth, lead and thallium, may be contained in novel com-~. ~
positions made by the present invention. rt would seemthat virtually any substantially homogeneous ~or solid solution) two-semiconductor that can or has been conceived can be prepared by the described method provided at least ~-; one of the components can be contained in a reactive gas ~, ~ and at least one of the components can be sputtered from -~ 20 a sputter target.
Table II does show that certain novel pseudo-bi- ~ ~
nary semiconductor systems can be made by the present inven- ~ ;
tion. Such novel binary semiconductor compositions have the formula: (A)l XtB)x, where A is a Group IIIa-Va semiconduc-tor compound selected rom the group consisting of BN, AlN, GaN, InN, BP, AlP, GaP, InP, AlAs, GaAs, InAs, AlSb, GaSb and InSb, B is a Group IVa element selected from the group consisting of Si, Ge and Sn, and x is a number greater than about 0.01 and preferably greater than 0.05 where x + (l-x) =
1. Of these compositions, the BP, AlP, GaP, InP, AlAs, GaAs, , . . .

44,667 .
:
~9~
InAs, AlSb and GaSb compositions are of more interest be-cause of their greater compatibility in lattice structure with the Group IVa elements, and (GaAs)l xSix, (GaAs)l xGex, (InSb) Si , (InSb)l_xGex~ (InAs)l-xsix l-x x are of greatest interest. GaAs-Si and GaAs-Ge systems were . . :,, -~ previously reported as essentially non-miscible systems.

These novel compositions are, therefore, of great interest -~`~ in making semiconductor devices requiring unique semicon- `

ductor parameters, particularly in epitaxial layers as the `` 10 present invention provides.
, ~; - . ~
Moreover, Table II shows that a broader class of novel compositions can be made to provide semiconductor ~'~
devices in accordance with the present invention. These novel compositions have the general formula: (Al)X (A2)X2 ~-n xn Al, A2 . . . An are each selected from ~;
the group consisting of Group IIIa-Va and IVa-IVa compounds ~;~
BN, AlN, GaN, InN, BP, AlP, GaP, InP, AlAs, GaAs, InAs, AlSb, GaSb, InSb, and GeSi and Group IIIa, IVa and Va elements, and the Al, A~ . . . An contain at least one of the ~roup IIIa-Va and IVa-IVa semiconductor compounds, -;

at least one Group IVa element selected from Si and Ge, or at least one Group IIIa element and at least one Group Va ~ i element; where xl, x2 . . . xn are all numbers greater than ;-about 0.01 and preferably greater than 0.05 where xl + x2 +
. ;, , .
Xn = l; and where n is an integer greater than 2 other than 4 where Al, A2, A3 and A4 are all semiconductor ~ ;;
compounds. The Group IIIa elements are boron (B), aluminum (Al), gallium (Ga), indium (In) and thallium (Tl); the Group IVa elements are carbon (C), silicon (Si), germanium (Ge), tin (Sn), and lead (Pb); and the GrouP Va elements are -:
.

. ~ . . .
.
:

. ~,667 ~5~
nitrogen tN), phosphorus (P), arsenic (As), antimony ~Sb) and bismuth (Bi). In this connection, it should be no-ted (i) that partially soluble solutions of (Al)(A2)(A3)(A4) compositions where Al, A2, A3 and A4 are all IIIa-Va compounds have been achieved by other means, see J. L.
Richards, "Solubility Studies in Semiconductor Alloy Films", ~ I
edO J. C. Anderson (1966), p. 413 and (ii) that InBi, TlSb and TlBi are re~orted as metallic compositions, see 0.
Madelung, ~ , (1964), p. 8.
Of these novel compositions of the formula, the compositions where n is a digit and preferably less than 7 and more preferably n = 3 are of particular interest in making semiconductor devices. The ternary compositions are of greatest importance which have the general formula (Al)X :.
(A2)y~A3)z where Al, A2 and A3 are elements each selected fxom Group IIIa, IVa and V:a elements B, Al, Ga, In, Si, Ge, Sn, N, P, As and Sb where Al, A2 and A3 contain at least ~:
one Group IVb element selected from Si and Ge or at least one Group IIIa and at least one Group Va element, and where x, y and z are each numbers greater than about 0.01 and preferably greater than 0 05 where x ~ y + z = 1. Of these ~ .
t~rnaries, GaxAsySi~, GaxAsyGez, GaxSbySiz, GaxSbyGez, ;~;
GaxAsySbz, InxShySiz, InxSbyGez, In~SbyAsz, InxAsySiz and InxAsyGez are of greatest interestO
. With regard to all of these general formulas, it should be recognized that the composition of each of the components is greater than about 0.01 and preferably greater than O.05~ A composition with a lesser amount of a component acts as a different composition absent the component of lesser -5~-44,667 S~

amount, or as a different composition doped with the componen~ of lesser amount. For example, AsSiIn, where As and In axe present in amounts of 10-12 to 10 20 atoms/cm3, is simply silicon compensation doped with - arsenic and indium. In addition, it is apparent to one skilled in the art that where a semiconductor composition is desired, the components must be varied within the formula so that ~he semiconductor elemen~s or semiconductor compounds dominate, or the IIIa-V~ elements in proper balance dominate. And Sn is preferred in a crystal form where it is semicon~ucting. However, non-semiconductor compositions within the general formula may have utility, for example, ~ -in making integral sputter targets a hereinafter described.
Table II also establishes preferred operation for compounding with the present invention. Generally, sputtered species deposi~ in the layer on substrate unchanged, i.e.

:, . :
they re~ain their compound integrity, while gas species deposit in the layer in elemental form. Thus, compounds ~ ~
are typically deposited from the sputter target and elements ~ ;
; ~ 20 deposited from the reactive gas to provide greater latitude in the operating conditions. ~o have the compound formed by the reaction of reactive gases, the concentration and partial pressure of the reactive gases and the substrate temperature require careful control to provide the desired :- :
compound in a homogeneous composition.
On the other hand, the difficulty in depositing from the sputter target is that (i) ionization sometimes causes diqassociation of weakly bonded elements in a ~ompound, and tii) that, where two or more compositions are sputtered, physical separation of multiple sputter ,. .
~'''' ' ' : . , ,r ` 44, 667 ~S~38~
targets cause non-uniformity in the sputtered composition and in turn non-homogeneity in the deposited composition~
Where ~he former difficulty arises, the compound is preferably deposited by electrical discharge xeaction of reactive gases Where the latter difficulty arises, a single integral sputter target containing a composition of two or more materials to be sputtered may be prepaxed by use of the present inventive method That is, an electrode suitable for a sputter target electrode may be disposed in the position of the substrate in Figure 1. Two or more materials may be deposited~
on the electrode by the method above described to form on the - , electrode an integral sputter t:arget of a substantially homo-geneous composition containing the desired compounds desired to be deposited on the substxat:eO Thereafter, the electrode with the target composition thereon is positioned in the apparatus of Figure 1 as the sputter electrode~sputter target assembly. The desired semiconductor compounds can thus be simultaneously sputtered from the single int~ral sputter tar~et. Alternatively, a single targek can be made with pie- -shaped or checkerboard pieces of the different compounds to be sputtered; however, this type of target i's generally more difficult and expensive than the above-described inte-gral sputter target containing a substantially homogeneous composition of two or more materials to be sputtered.
It should also be noted in connection with Table ;
II, as with Table I and the general operation of the apparatus ~- -; of Figure 1, that an additional gas may be required in mix-ture with the reactive gas to provide for the electrical discharge reaction For example, hydrogen gas (H2) may be , '' .

~~~ 44,667 ,..

~5'~ 8~

inserted to reduce SiC14 and In(CH3)3 and provide HCl and and CH4 as by-products. This can be simply done by addition of another vessel and valve connection to the mixing chamber in the apparatus of Figure 1. Further, in connec-tion with Table II, it should be noted that the target and reactive gas compositions listed are merely examples selected to illustrate various of the starting compositions and are not necessarily the most preferred starting materials to making the particular composition.
- ~ 10 As previously noted, ~able II shows that substan- -~
tially homogeneous (or solid solution) composition can be - made by the inventive method oE materials previously repor-ted as "non-miscible". Specif.ically, the maximum solubility of Si in bulk GaAs is reported as approximately 0~5%.
. . .
For this reason the system (GaAs)l_xSix was investigated most fully~

Using the apparatus as described in Figure 1, (GaAs)l_xSix layers were epitaxially grown on single-crystal ~ ;
substrates of gallium arsenide. The apparatus was vaculated and back-filled with argon to 2 x 10 torr. After brief clean-up sputtering, the reactive gas, silane ~SiH4), was ;; -leaked into the chamber and the shutter pivoted to begin the deposition on the substrate. Applied to the sputter electrode was an RF potential of about 1000 volts (i.ë., about 1.3 wa~ts/cm2) at a frequency of 13.56 MHzo The sub- -~
strate was heated and maintained at a temperature between 530 and 600 C during the deposition. The layers thus made were examined to determine their composition.
X-ray diffraction was used to determine the ; 30 lattice parameter, aO. Using the GaAs substrate as . ' : '~ .~ ;:

44,667 ~5~

reference, values to within an accuracy of + 0.01 A were easily obtained. The x-ray data confixmed for all composi-~ tions that only a single phase of a disordered zinc blend `~ structure was present.
Compositions wexe determined from electron micro-probe data. In this measurement raw intensity data are submitted to a standard computer program~ A plot of lattice spacing, aO ~ versus composition in Figure 3, shows conformity to Veyard's Law of linear change of lattice parameter with ` 10 comp~sition. In the more easily miscible systems, such behavior is indicative of homogeneity in well-equilibrated systems.
Optical transmission measurements were made with a Cary spectrophotometer at wavelengths between 0.7 and ~ `
~OS ~m (1.76 and 0.49 eV). For the measurements, the compositions were constrairled to flat suraces of high purity silica blanks by a non-absorbing resin~ The GaAs ~` ` substrates were etched away using a bromine-methanol etch.
Chemical attack of the solid solution films was imperceptible.
The absorption coefficien~ , was determined from trans-mittance data for films of many compositions. Bandgaps, `~
- Eg, were then determined by plotting a~ VS (hv~Eg) or 1/2 vs ~hv~~g)~ Straight line interc~pts of the energy axis give Eg. All compositions investigated (x < 0.55~ showed direct transition behavior.
Re~erring to Figures 4 and 5, the change in band-gap energy with changes in percentage compositions of the known germanium-silicon and indium antimonide-indium arsenide compositions are shown. The curves show that the ^- 30 change in bandgap energy with changes in composition are 44,667 3L~59)8~
not always linear. In the germanium-silicon system the bandgap energy continually increases but contains an inflec-~ tion in the curve, In the indium antimanide-indium arsenide : system a minimum of 0.10 eV is observed at 60 mole~ indium .
antimonide~
While presently preferred embodiments have been shown and described with particularity, it is distinctly - understood that the invention may be otherwise variously performed within the scop~ of the following claims.
.

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,, '' ' - ~ ' ';.' ' . :' ' ~' '',' ~.
': ' :" ^

' ' ~,'' ' ": ~

Claims (4)

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:

1. A method of forming a solid semiconductor layer on a substrate comprising the steps of:
A. forming at least one sputter target contain-ing at least one component material selected from the group consisting of lead, tin, germanium, tellurium, selenium and compounds thereof, B. disposing each formed sputter target and a substrate proposed for deposition thereon in a spaced re-lation in a partial vacuum chamber;
C. introducing into the vacuum chamber a gas mixture containing at least one reactive gas composition containing at least one element selected from the group consisting of lead, tin, germanium, tellurium and selenium such that the formed sputter target or targets, introduced reactive gas composition or compositions, or both include lead;
D. sputtering the component material from at least one said sputter target to deposit material on the substrate; and E. simultaneously with step D, electrically discharge reacting at least one said reactive gas compo-sition to deposit material on the substrate, and forming on the substrate, with the material deposited by sputter-ing, said solid semiconductor layer.

2. A method of forming a solid semiconductor layer on the substrate as set forth in claim 1 wherein:

the deposition by both sputtering and electrical discharge reacting are performed by applying an RF poten-tial across the substrate and at least one sputter target.

3. A method of forming a solid semiconductor layer on a substrate comprising the steps of:
A. forming at least one sputter target contain-ing at least one component material selected from the group consisting of mercury, cadmium, tellurium, selenium and compounds thereof;
B. disposing each formed sputter target and a substrate proposed for deposition thereon in a spaced rela-tion in a partial vacuum chamber;
C. introducing into the vacuum chamber a gas mixture containing at least one reactive gas composition containing at least one element selected from the group consisting of mercury, cadmium, tellurium and selenium such that the formed sputter target or targets, intro-duced reactive gas composition or compositions, or both include mercury;
D. sputtering the component material from at least one said sputter target to deposit material on the substrate; and E. simultaneously with step D, electrically discharge reacting at least one said reactive gas compo-sition to deposit material on the substrate, and forming on the substrate, with the material deposited by sputter-ing, said solid semiconductor layer.

4. A method of forming a solid semiconductor layer on a substrate comprising the steps of:
A. forming at least one sputter target contain-ing at least one component material selected from the group consisting of lead, tin, germanium, tellurium, selenium, mercury, cadmium and compounds thereof, B. disposing each formed sputter target and a substrate proposed for deposition thereon in a spaced re-lation in a partial vacuum chamber;
C. introducing into the vacuum chamber a gas mixture containing at least one reactive gas composition comprising at least one element selected from the group consisting of lead, tin, mercury, cadmium, germanium, tellurium and selenium such that the formed sputter target or targets, introduced reactive gas composition or compositions, or both include one element selected from the group consisting of lead and mercury;
D. sputtering the component material from at least one said sputter target to deposit material on the substrate; and E. simultaneously with step D, electrically discharge reacting at least one said reactive gas compo-sition to deposit material on the substrate, and forming on the substrate, with the material deposited by sputter-ing, said solid semiconductor layer.