JPS5932179A - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法

Info

Publication number
JPS5932179A
JPS5932179A JP57143022A JP14302282A JPS5932179A JP S5932179 A JPS5932179 A JP S5932179A JP 57143022 A JP57143022 A JP 57143022A JP 14302282 A JP14302282 A JP 14302282A JP S5932179 A JPS5932179 A JP S5932179A
Authority
JP
Japan
Prior art keywords
layer
electrode
paste
silicon oxide
back side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57143022A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023310B2 (enrdf_load_stackoverflow
Inventor
Yuuji Tawara
裕滋 田原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoxan Corp
Hokusan Co Ltd
Original Assignee
Hoxan Corp
Hokusan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoxan Corp, Hokusan Co Ltd filed Critical Hoxan Corp
Priority to JP57143022A priority Critical patent/JPS5932179A/ja
Publication of JPS5932179A publication Critical patent/JPS5932179A/ja
Publication of JPH023310B2 publication Critical patent/JPH023310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57143022A 1982-08-18 1982-08-18 太陽電池の製造方法 Granted JPS5932179A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143022A JPS5932179A (ja) 1982-08-18 1982-08-18 太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143022A JPS5932179A (ja) 1982-08-18 1982-08-18 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS5932179A true JPS5932179A (ja) 1984-02-21
JPH023310B2 JPH023310B2 (enrdf_load_stackoverflow) 1990-01-23

Family

ID=15329094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143022A Granted JPS5932179A (ja) 1982-08-18 1982-08-18 太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS5932179A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
DE19758712B4 (de) * 1996-12-20 2007-02-15 Mitsubishi Denki K.K. Verfahren zur Herstellung einer Halbleitervorrichtung
JP2007201007A (ja) * 2006-01-24 2007-08-09 Sharp Corp 光電変換素子
EP1906455A4 (en) * 2005-06-22 2010-12-01 Kyocera Corp SOLAR CELL ELEMENT AND METHOD FOR MANUFACTURING SAME

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
DE19758712B4 (de) * 1996-12-20 2007-02-15 Mitsubishi Denki K.K. Verfahren zur Herstellung einer Halbleitervorrichtung
EP1906455A4 (en) * 2005-06-22 2010-12-01 Kyocera Corp SOLAR CELL ELEMENT AND METHOD FOR MANUFACTURING SAME
JP2007201007A (ja) * 2006-01-24 2007-08-09 Sharp Corp 光電変換素子

Also Published As

Publication number Publication date
JPH023310B2 (enrdf_load_stackoverflow) 1990-01-23

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