JPS5931224B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5931224B2
JPS5931224B2 JP49019737A JP1973774A JPS5931224B2 JP S5931224 B2 JPS5931224 B2 JP S5931224B2 JP 49019737 A JP49019737 A JP 49019737A JP 1973774 A JP1973774 A JP 1973774A JP S5931224 B2 JPS5931224 B2 JP S5931224B2
Authority
JP
Japan
Prior art keywords
type
region
insulating substrate
semiconductor layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49019737A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50114986A (enrdf_load_stackoverflow
Inventor
道宏 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP49019737A priority Critical patent/JPS5931224B2/ja
Publication of JPS50114986A publication Critical patent/JPS50114986A/ja
Publication of JPS5931224B2 publication Critical patent/JPS5931224B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP49019737A 1974-02-18 1974-02-18 半導体装置 Expired JPS5931224B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49019737A JPS5931224B2 (ja) 1974-02-18 1974-02-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49019737A JPS5931224B2 (ja) 1974-02-18 1974-02-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS50114986A JPS50114986A (enrdf_load_stackoverflow) 1975-09-09
JPS5931224B2 true JPS5931224B2 (ja) 1984-07-31

Family

ID=12007630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49019737A Expired JPS5931224B2 (ja) 1974-02-18 1974-02-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS5931224B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151480A (enrdf_load_stackoverflow) * 1974-05-24 1975-12-05
JPS5429583A (en) * 1977-08-10 1979-03-05 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1010158A (en) * 1973-01-05 1977-05-10 Westinghouse Electric Corporation Epitaxially grown silicon layers with relatively long minority carrier lifetimes
DE2344320C2 (de) * 1973-09-03 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten

Also Published As

Publication number Publication date
JPS50114986A (enrdf_load_stackoverflow) 1975-09-09

Similar Documents

Publication Publication Date Title
JP3291957B2 (ja) 縦型トレンチｍｉｓｆｅｔおよびその製造方法
JPH0783119B2 (ja) 電界効果トランジスタ
JPH04127480A (ja) 高耐圧低抵抗半導体装置及びその製造方法
JPS61133656A (ja) 半導体装置およびその製造方法
JPH02143566A (ja) 二重拡散形絶縁ゲート電界効果トランジスタ
JPS62248255A (ja) 薄膜トランジスタ
JPS5931224B2 (ja) 半導体装置
JPS6123669B2 (enrdf_load_stackoverflow)
JPH0350771A (ja) 半導体装置
JPH0656855B2 (ja) 絶縁ゲ−ト型電界効果トランジスタ
JPS63217664A (ja) Ｍｉｓｆｅｔ及びその製造方法
JPS626352B2 (enrdf_load_stackoverflow)
JPH0213826B2 (enrdf_load_stackoverflow)
JPS62248256A (ja) 半導体装置
JPH051083Y2 (enrdf_load_stackoverflow)
JPS606104B2 (ja) Ｍｉｓ半導体装置
JP3014138B2 (ja) 半導体装置
JPS6055995B2 (ja) 接合型電界効果トランジスタ
JPS61203679A (ja) 高耐圧ｍｏｓトランジスタ
JPS5980970A (ja) Ｖ溝ｍｏｓ形電界効果トランジスタ
JPH07249760A (ja) 半導体装置の製造方法
JP2708525B2 (ja) Ｍｏｓ型半導体装置
JPS6146990B2 (enrdf_load_stackoverflow)
JP2968640B2 (ja) 半導体装置
JPS5850033B2 (ja) ゼツエンゲ−トデンカイコウカトランジスタ