JPS5931224B2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5931224B2 JPS5931224B2 JP49019737A JP1973774A JPS5931224B2 JP S5931224 B2 JPS5931224 B2 JP S5931224B2 JP 49019737 A JP49019737 A JP 49019737A JP 1973774 A JP1973774 A JP 1973774A JP S5931224 B2 JPS5931224 B2 JP S5931224B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- insulating substrate
- semiconductor layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49019737A JPS5931224B2 (ja) | 1974-02-18 | 1974-02-18 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49019737A JPS5931224B2 (ja) | 1974-02-18 | 1974-02-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50114986A JPS50114986A (enrdf_load_stackoverflow) | 1975-09-09 |
JPS5931224B2 true JPS5931224B2 (ja) | 1984-07-31 |
Family
ID=12007630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49019737A Expired JPS5931224B2 (ja) | 1974-02-18 | 1974-02-18 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931224B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50151480A (enrdf_load_stackoverflow) * | 1974-05-24 | 1975-12-05 | ||
JPS5429583A (en) * | 1977-08-10 | 1979-03-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1010158A (en) * | 1973-01-05 | 1977-05-10 | Westinghouse Electric Corporation | Epitaxially grown silicon layers with relatively long minority carrier lifetimes |
DE2344320C2 (de) * | 1973-09-03 | 1975-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten |
-
1974
- 1974-02-18 JP JP49019737A patent/JPS5931224B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS50114986A (enrdf_load_stackoverflow) | 1975-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3291957B2 (ja) | 縦型トレンチmisfetおよびその製造方法 | |
JPH0783119B2 (ja) | 電界効果トランジスタ | |
JPH04127480A (ja) | 高耐圧低抵抗半導体装置及びその製造方法 | |
JPS61133656A (ja) | 半導体装置およびその製造方法 | |
JPS6097661A (ja) | 半導体集積回路装置 | |
JPS62248255A (ja) | 薄膜トランジスタ | |
JPS5931224B2 (ja) | 半導体装置 | |
JPS6123669B2 (enrdf_load_stackoverflow) | ||
JPH0350771A (ja) | 半導体装置 | |
JPH0656855B2 (ja) | 絶縁ゲ−ト型電界効果トランジスタ | |
JPS63217664A (ja) | Misfet及びその製造方法 | |
JPS626352B2 (enrdf_load_stackoverflow) | ||
JPH0213826B2 (enrdf_load_stackoverflow) | ||
JPS62248256A (ja) | 半導体装置 | |
JPH051083Y2 (enrdf_load_stackoverflow) | ||
JPS606104B2 (ja) | Mis半導体装置 | |
JP3014138B2 (ja) | 半導体装置 | |
JPS6055995B2 (ja) | 接合型電界効果トランジスタ | |
JPS61203679A (ja) | 高耐圧mosトランジスタ | |
JPH07249760A (ja) | 半導体装置の製造方法 | |
JP2708525B2 (ja) | Mos型半導体装置 | |
JPS6146990B2 (enrdf_load_stackoverflow) | ||
JP2968640B2 (ja) | 半導体装置 | |
JPS5850033B2 (ja) | ゼツエンゲ−トデンカイコウカトランジスタ | |
JPS60198863A (ja) | Misトランジスタ及びその製造方法 |